SIR640ADP Search Results

Contextual Info: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiR640ADP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 40 0.0020 at VGS = 10 V 60 0.0025 at VGS = 4.5 V 60 Qg (Typ.) 28.5 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency

Contextual Info: SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) MAX. ID (A) a 0.0020 at VGS = 10 V 100 0.0025 at VGS = 4.5 V 100 Qg (TYP.) 28.5 nC D 5 D 6 • Low Qg for high efficiency • 100 % Rg and UIS tested

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in