SI2392ADS Search Results
SI2392ADS Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2392ADS-T1-BE3 | Vishay Siliconix | N-CHANNEL 100-V (D-S) MOSFET | Original | 262.15KB | 10 | ||
| SI2392ADS-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 3.1A SOT-23 | Original | 261KB |
SI2392ADS Price and Stock
Vishay Intertechnologies SI2392ADS-T1-BE3N-CHANNEL 100-V (D-S) MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2392ADS-T1-BE3 | Cut Tape | 5,988 | 1 |
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SI2392ADS-T1-BE3 | Tape & Reel | 12,000 | 37 Weeks | 3,000 |
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SI2392ADS-T1-BE3 | 16,044 |
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SI2392ADS-T1-BE3 | 12,000 | 3,000 |
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SI2392ADS-T1-BE3 | 12,000 | 29 Weeks | 3,000 |
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SI2392ADS-T1-BE3 | Reel | 30,000 | 3,000 |
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SI2392ADS-T1-BE3 | 30 Weeks | 3,000 |
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Vishay Intertechnologies SI2392ADS-T1-GE3MOSFET N-CH 100V 3.1A SOT23-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2392ADS-T1-GE3 | Tape & Reel | 3,000 |
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SI2392ADS-T1-GE3 | Tape & Reel | 14 Weeks | 6,000 |
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SI2392ADS-T1-GE3 | 30,340 |
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SI2392ADS-T1-GE3 | 6,000 | 3,000 |
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SI2392ADS-T1-GE3 | 6,000 | 14 Weeks | 3,000 |
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SI2392ADS-T1-GE3 | Tape & Reel | 6,000 |
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SI2392ADS-T1-GE3 | Reel | 6,000 | 3,000 |
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SI2392ADS-T1-GE3 | 3,000 | 1 |
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SI2392ADS-T1-GE3 | 16 Weeks | 6,000 |
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SI2392ADS-T1-GE3 | 3,000 | 15 Weeks | 3,000 |
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SI2392ADS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET |
Original |
Si2392ADS OT-23 O-236) Si2392ADS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si2392ADS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si2392ADS AN609, 3452u 7006u 5750m 4348m 8505m 7774m 6074m 30-Apr-15 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
Original |
SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |