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    SIS407ADN Search Results

    SIS407ADN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS407ADN-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 18A 1212-8 PPAK Original PDF 634.5KB
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    SIS407ADN Price and Stock

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    Vishay Intertechnologies SIS407ADN-T1-GE3

    MOSFET P-CH 20V 18A PPAK1212-8
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    DigiKey () SIS407ADN-T1-GE3 Digi-Reel 11,110 1
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    SIS407ADN-T1-GE3 Cut Tape 11,110 1
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    SIS407ADN-T1-GE3 Tape & Reel 9,000 3,000
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    Avnet Americas SIS407ADN-T1-GE3 Tape & Reel 6,000 20 Weeks 3,000
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    Mouser Electronics SIS407ADN-T1-GE3 4,806
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    Verical () SIS407ADN-T1-GE3 4,196 21
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    SIS407ADN-T1-GE3 3,000 3,000
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    Arrow Electronics () SIS407ADN-T1-GE3 Cut Strips 4,196 20 Weeks 1
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    SIS407ADN-T1-GE3 3,000 20 Weeks 3,000
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    Newark () SIS407ADN-T1-GE3 Cut Tape 50 1
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    SIS407ADN-T1-GE3 Tape & Reel 6,000
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    TTI SIS407ADN-T1-GE3 Reel 12,000 3,000
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    Avnet Asia SIS407ADN-T1-GE3 22 Weeks 6,000
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    Chip Stock SIS407ADN-T1-GE3 16,855
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    EBV Elektronik SIS407ADN-T1-GE3 21,000 21 Weeks 3,000
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    Maritex SIS407ADN-T1-GE3 7,000 1
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    Vishay Dale SIS407ADN-T1-GE3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 18A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components SIS407ADN-T1-GE3 1,988
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    Vishay Siliconix SIS407ADNT1GE3

    Small Signal Field-Effect Transistor, 18A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIS407ADNT1GE3 1,035
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    Vishay Huntington SIS407ADN-T1-GE3

    MOSFET P-CH 20V 18A 1212-8 PPAK / Trans MOSFET P-CH 20V 18A 8-Pin PowerPAK 1212 T/R
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    Win Source Electronics SIS407ADN-T1-GE3 13,355
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    SIS407ADN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)


    Original     		SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiS407ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)


    Original     		SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF