RK49 Search Results

RK4936

Abstract: RK49
Contextual Info: RK4936 Transistors Switching 30V, 6A RK4936 +0.2 5.0− (4) (8) zStructure Silicon N-channel MOS FET +0.1 0.5− zEquivalent circuit (8) (7) (6) ∗ (2) (8) (7) (6) (5) (5) ∗ (3) (1) (2) (3) (4) (5) (4) (6) (7) (8) Tr1 Source Tr1 Gate Tr2 Source Tr2 Gate

Contextual Info: RK46 - RK49 SCHOTTKY BARRIER RECTIFIER DIODE PRV : 60 - 90 Volts IO : 3.5 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop 1.00 25.4

RK49

Contextual Info: RK49 SCHOTTKY BARRIER RECTIFIER DIODE PRV : 90 Volts IO : 3.5 Amperes DO-201AD FEATURES : * * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop Pb / RoHS Free

Contextual Info: SANKEN ELECTRIC CO., LTD. RK49 1. Scope The present specifications shall apply to an RK49. 2. Outline High Frequency Rectification Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

RK36

Abstract: MA711A RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA719
Contextual Info: - & & H RP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A M A719 M A720 MA735 MA736 M A 737 M A738 M A739 M A779 M A789 NSQ03A02L NSH03A10 NSQ03A04 N SQ0 3 A 0 6 R B 0 3 1 B —40 RB 1 0 0 A RB110C RB160L-40 « Vr s m V 25 B ÍL B5. 48 t&T tóT

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

AK03

Abstract: CTB34M B29L FMB-G24H RBA-406B RK36 FMBG24H rk49
Contextual Info: R SCHOTTK Pi3IODE SCHOTTKY BARRIER DIODES CENTER-TAP TYPE SCHOTTKY BARRIER DIODES Absolute Maximum Ratings (TA=25°C) Type Mo. V rm lo I fsm (V) (A) (A) with Fin SFPB-52 1.0 (V) 30 SFPB-62 20 2.0 SFPB -72 20 3.0 60 RK42 20 3.0 100 FM B-G12L 20 5.0 100 FMB-G22H

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

RK36

Abstract: RB100A RB110c RK46 HRW0503A KS826S04 MA701 MA701A MA711 MA711A
Contextual Info: - & & H RP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A M A719 M A720 MA735 MA736 M A 737 M A738 M A739 M A779 M A789 NSQ03A02L NSH03A10 NSQ03A04 N SQ0 3 A 0 6 R B 0 3 1 B —40 RB 1 0 0 A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 RK 3 3

J18M

Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

RK49

Abstract: class c tuned amplifier RK 49 class A amplifier
Contextual Info: R A YTH EO N RK-49 A M A TEU R TETRO D E POW ER A M P LIFIE R O S C ILLA T O R t y p ic a l BOTTOM VIEW OFSOCKET v o lts am p D IR E C T IN T ER ELEC TR O D E C A P A C IT A N C E S C n d to P la te . In p u t

diode ru4d

Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r

RK36

Abstract: MA701A MA711A RB100A RB110c HRW0503A KS826S04 MA701 MA711 MA719
Contextual Info: - & & H RP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A M A719 M A720 MA735 MA736 M A 737 M A738 M A739 M A779 M A789 NSQ03A02L NSH03A10 NSQ03A04 N SQ0 3 A 0 6 R B 0 3 1 B —40 RB 1 0 0 A RB110C RB160L-40 « V B ÍL B5. 25 t&T tóT fóT fóT

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

CSTCR6M00G15

Abstract: MAC8 ST-1-1 SKHMPS SKHMPWE010 OTAX alps p61 C368PF UBB-4R-D14T-1 BLM21PG221SN1D SKHMPUE010
Contextual Info: Data contained in this document may be changed without prior notification. MSD-M3A-8K02-UE RENESAS USB Full-Speed Microcomputers 38K0/38K2 Group Development Board M3A-8K02 Instruction Manual VER.1.0 RENESAS TECHNOLOGY CORPORATION RENESAS SOLUTIONS CORPORATION

RK9410

Abstract: RK4936
Contextual Info: SINGLE & DUAL N CHANNEL MOSFETS SINGLE N CHANNEL MOSFETS TA = 25˚C Part No • RK4410 • RK9410 VDSS V 30 30 VGSS ±V 20 20 • New Product ID ±A 10 7 PD W 2 2 RDS on @ VGS mΩ max V 20 4 43 4 RDS(on) @ VGS Ciss mΩ max V pF 12 10 1,750 23 10 710 DUAL N CHANNEL MOSFETS

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications

GRM40F104Z50

Abstract: HK-5-G SKHMPWE010 MAC8 ST-1-1 UBB-4R-D14T-1 SKHMPSE010 SKHMP*E010 SKHMPUE010 RK4936 SKHMPS
Contextual Info: Data contained in this document may be changed without prior notification. MSD-M3A-8K02-UE RENESAS USB Full-Speed Microcomputers 38K0/38K2 Group Development Board M3A-8K02 Instruction Manual VER.1.0 RENESAS TECHNOLOGY CORPORATION RENESAS SOLUTIONS CORPORATION