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Contextual Info: RGP25A, RGP25B, RGP25D, RGP25G, RGP25J, RGP25K, RGP25M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER • Cavity-free glass-passivated junction
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rgp25argp25brgp25drgp25g+6rgp25jrgp25krgp25m22-b106aec-q101do-201ad
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Contextual Info: SUPERDIODE GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIERS Maximum Average Rectified Current PIV . Peak inverse Voltage SURGE PART NUMBER VPK 1.0 Maximum Porward i Peak Surge Maximum Reverse Maximum Forward Voltage Resistive Load @PIV Voltage @ 25" C TA
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do-41rgp10argp10brgp10d+6rgp10krgp10mrgp25argp25brgp25drgp25g
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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diode cross referencein5408 equivalentdiotec electronicsin5408 diode+61n4008pbl302rgp20 17 diode rectifier1n4000 1n4004 1n4002rp602pbp205
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Contextual Info: Data Sheet 2 .5 An*> FAST SW ITCHING MEGARECTIFIERS Semiconductor Mechanical Dimensions JE D E C D0-201 A D 1 r .1 9 0 1 .210 285 t . 3751 . 1.00 M in . r _L 1 t Features • HIGH TEMPERATURE METALLURGI C A L!^ BONDED CONSTRUCTION ■ 2JS AMP OPERATION T . = 55°C, WITH
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d0-201rgp25argp25brgp25d+5rgp25jrgp25krgp25m1021x21x548x22x36cm
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BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15abyd74gfur460diode tfk18db6adiode cross referencefagor sm6t33cabzy97ctfk 2401smzg06gpd4sb80z
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102i8262color tv tube charger circuit diagramsmbrf 1015 ct+8smd diode s4 67ado-213ab smd diode color marking codevacuum tube applications data bookv40100pgdiode 719 b340aequivalent 31gf6sb050 d 168s104 diode 87a
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Contextual Info: RGP25A thru RGP25M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency d* e
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rgp25argp25mdo-201admil-s-19500+32002/95/ec2002/96/ec08-apr-05
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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bap1321-02bap65-05bap65-03bap65-05w+16bap65-02bap63-03bap63-02bap64-03bap64-02bb143bc548 transistor replacementtyn612 pin diagram1n4007 smd, toshibas0817mhtyn604 scr pin diagramkmz51 compasstransistor s1a 64 smdtoshiba l 300 laptop motherboard circuit diagramjfet transistor replacement guide j201replacements for transistor nec d 587
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DO-204AC
Abstract: gf1m DO-214BA DO204AC DO204AL GI816 DO-204AL RG02-20E RG02 RGP02 VR800
Contextual Info: SUPERECTIFIERS 0.25 TO 3.0 AMPERES 50 VOLTS TO 4000 VOLTS INTRODUCTION TO SUPERECTIFIER General Semiconductor Superectifier is exactly that, a super rectifier. There is nothing else in the world like it. This is the most cost effective and highly reliable device on the market which is the result of a combination of patented technologies.
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rgp15dgp20drgp20drgp25d+161n5624gpgp30drgp30drgp10ggp15grgp15gdo-204acgf1m do-214bado204acdo204algi816do-204alrg02-20erg02rgp02vr800
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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Solitron J775-2
Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188
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RGP150
Abstract: RG02-20E RGP158 RG02-12E rgp02 RGP30J gf1m DO-214BA GP02 DO213 204AL
Contextual Info: QUICK GUIDE TO SUPERECTIFIERS' *RGP02 GP02 GI250 TYPE -12E thru -20 thru -1 thru -4 -20E •40 CASE GP10E D0-204AL DO-204AL tofAl 0.5 0,25 0.25 TAi°C 55 55 Vr=1 XXXV) V r«1200(V ì 75 GI250-1 RG02-12E VRS1400ÌVÌ RG02-14E Vr=1600(V) RG02-16E VR=1800fVi
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rgp02vrs14001800fvirg02-12e+13rg02-14erg02-16erg02-18erg02-20egp02-20gp02-25rgp150rgp158rgp30jgf1m do-214bagp02do213204al
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shindengen mr5060
Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A
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5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15ashindengen mr5060tfk 601tfk 60218db6a18db8a18db2aphilips bzv85c-22 data sheetbzx85c motorolabyd74gur1m
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MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
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1n58171n56181n58181n5819+121n58201n5821mda2501pbl302g1756g1756 diodemda2502mda970a6mda3510mda2500mda3502 bridge rectifiermda970a1
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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kl sn 102 94v-0diode egp 30dcircuit diagram of 5kw smps full bridgemelf zener diode color bands blue+6y-349 diodegi 2w06gdo-213ab smd diode color marking code6j 507 smd transistorsmd diode marking g2azener marking bj9
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JESD22-B102D
Abstract: J-STD-002B RGP25A RGP25M
Contextual Info: RGP25A thru RGP25M Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* t
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rgp25argp25mmil-s-19500do-201ad+52002/95/ec2002/96/ec08-apr-05jesd22-b102dj-std-002b
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D0-201AD
Abstract: RGP25A RGP25B RGP25D RGP25G RGP25J RGP25K RGP25M
Contextual Info: 2.5 Amp FAST SWITCHING MEGARECTIFIERS RGP25A . . . 25M Series Data Sheet Mechanical Dimensions Description JEDEC D0-201AD .285 .375 .190 .210 1.00 Min. .050 typ. Features n HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION n 2.5 AMP OPERATION @ TA = 55°C, WITH
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1N5498
Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244
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RG02-20E
Abstract: GP02 1NS399GP D0404AL GP25M
Contextual Info: FAMILIES OF GENERAL INSTRUMENT SUPERECTIFIER Glass Passivated Junction Plastic Rectifiers 0.25 to 1.5 AMPERES Types: 1N361 lG P thru 1N3614GP lN 4 00 lG P th ru 1N4007GP 1N4245PG thru 1N4249GP lN 5059GPthru 1N5062GP !N 539lG P thru 1N5399GP GI250-1 thru GI250-2
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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murb1620ctvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605stpr16mur480e340l-02pk mur 460bv 202 01581n541ak sot23stps2045ss33 smba14f diode
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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