RFP2N20 Search Results

Contextual Info: W vys s' RFP2N18L, RFP2N20L Semiconductor 7 2A, 180V and 200V, 3.5 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 180V and 200V The RFP2N18L and RFP2N20L are N-Channel enhance­ ment mode silicon gate power field effect transistors specifi­

P2N20

Abstract: RFP2N20
Contextual Info: R FP2N 18 RFP2N20 33 H a r r i s N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Features Package T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rD S °n = 3-5 fi • SOA is Power-Dissipation Limited DRAIN FLANGE • Nanosecond Switching Speeds

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Logic Level N-Channel Power MOSFET

Abstract: AN7254 AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

1S11

Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20
Contextual Info: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: RFP2N20L Data Sheet Title FP2 0L bt A, 0V d 0V, 00 m, gic vel, an- July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use

multiplier ttl

Contextual Info: RFP2N18L RFP2N20L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rDS(0N) = 3 .5 « DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits

Contextual Info: 4302271 0D5431b b?fi • h a r i r HAS RFP2N18 RFP2N20 i s N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 2 0 A B • 2A, 180V and 200V TOP VIEW • fDS on = 3-5 fl • SOA is Power-Dissipation Limited DRAIN

AN7254

Abstract: AN7260 RFP2N20L TB334
Contextual Info: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet Title FP2 0 bt A, 0V, 00 m, anwer OST) utho July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

RFL1N20L

Abstract: RFP2N20L RFL1N18L RFP2N18L
Contextual Info: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

1n20

Abstract: RFP2N18 rfl1n18 RFL1N20 RFP2N20 TA9290 TA9289
Contextual Info: Standard Power MOSFETs RFL1N18, RFL1N20, RFP2N18, RFP2N20 F ile N u m b e r 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 180 and 200 V rD s on : 3.50 and 3.650 Features: • a ■ ■ ■ SO A is p o w e r-d is s ip a tio n lim ite d

TA09532

Contextual Info: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

FQP630

Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Contextual Info: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .