TA09289 Search Results

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

reverse bias diode characterstics

Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
Contextual Info: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

DIODE N20

Contextual Info: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet Title FP2 0 bt A, 0V, 00 m, anwer OST) utho July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

AN7254

Abstract: AN7260 RFP2N20
Contextual Info: RFP2N20 Data Sheet July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such