PDM41028 Search Results

Contextual Info: P A R A E ÏG M PDM41028SA PDM41028LA ' 1 Megabit Static RAM 256K x 4-Bit Features Description □ High speed access times Com'l: 10,12,15,17, 20 and 25 ns Ind'l: 15,17,20, and 25 ns The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x4 bits. This product is

Contextual Info: Paradigm ' PDM41028 1 Megabit Static RAM 256K x 4-Bit Features Description □ High speed access times Com'l: 10,12 and 15 ns Ind'l: 12 and 15 ns The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. Writing to this device is accomplished when the write enable WE

Contextual Info: PARADIGM 1 Megabit Static RAM 256K x 4-Bit PDM41028S PDM41028L Features Description □ High speed access times Com'l: 20,25, 35 and 45ns M il: 20,25, 35,45, and 55ns □ Low power operation - PDM41028S Active: 400mW typ. Standby: 150 mW (typ.) - PDM41028L

PDM41028

Contextual Info: PDM41028 1 Megabit Static RAM 256K x 4-Bit Features Description • High speed access times Com’l: 10, 12, 15, 17 and 20 ns Ind’l: 12, 15, 17 and 20 ns The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. This product is produced in Paradigm’s proprietary CMOS

PDM41028

Contextual Info: PDM41028 1 Megabit Static RAM 256K x 4-Bit Description Features n High speed access times Com’l: 10, 12 and 15 ns Ind’l: 12 and 15 ns n Low power operation typical - PDM41028SA Active: 400 mW Standby: 150 mW - PDM41028LA Active: 350 mW Standby: 100 mW

Contextual Info: Paradigm PDM41028 1 Megabit Static RAM 256K x 4-Bit Features Description □ High speed access times Com'l: 10,12,15,17 and 20 ns Ind'l: 12,15,17 and 20 ns The PDM41028 is a high-performance CMOS static RAM organized as 262,144 x 4 bits. This product is produced in Paradigm's proprietary CMOS

Contextual Info: PARADIGM Product Family MODULES Secondary Level Cache Modules Static RAM Modules • • • • • • • • PDM4M096S PDM4M096L PDM4M4030 PDM4M4040 PDM4M4050 PDM4M4060 PDM4M4110 PDM4M4120 512K x 8 Asynchronous (512K x 8 Asynchronous) (64Kx 32 Asynchronous)

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

MT5C2568

Abstract: 16kx4 8833 256kx1 IDT7188 41024 84256 CY7C PDM41024 EDI88130
Contextual Info: SRAM FUNCTIONAL CROSS REFERENCE GUIDE NOTE: This guide reflects functional correlation only. Refer to individual data sheets to ensure that the device meets your requirements. CYPRESS AUSTIN DESCRIPTION IDT AUSTIN DESCRIPTION CY7C 106 MT5C1005 256Kx40E IDT61298

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in