PDM31096 Search Results

PDM31096

Abstract: PDM31096LL
Contextual Info: PDM31096LL PRELIMINARY 512K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31096LL Active: 65 mW Standby: 10µW The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

PDM31096

Contextual Info: PDM31096 PRELIMINARY 4 Megabit 3.3V Static RAM 512K x 8-Bit Features n n n n n High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW Description 1 The PDM31096 is a high-performance CMOS static

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 512 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (±0.3V) power supply

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (+0.3V) power supply

PDM31096

Contextual Info: PDM31096 PRELIMINARY 4 Megabit 3.3V Static RAM 512K x 8-Bit Features n n n n n High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW Description 1 The PDM31096 is a high-performance CMOS static

Contextual Info: PDM31096LL 512K x 8-Bit Low Power 3.3 Volt Features Description □ High-speed access times Com'l: 70, 85 and 100ns The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this device is accomplished when the write enable WE

PDM31096

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 51 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0 ,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

PDM31096

Abstract: a7532
Contextual Info: Paradigm ' PRELIM IN A RY PDM31096 4 Megabit 3.3V Static RAM 512 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (±0.3V) power supply

AN07

Abstract: PDM31516 PDM41532 RC336 TMS320 RCDL56 accelerator rockwell modem
Contextual Info: Application Note AN-07 DSPs and Paradigm Technology SRAMs DSP chipsets are being built today with increasing SRAM and other memory ROM, EEPROM, FLASH, etc. integrated onto the silicon (50K words of SRAM in one case). Applications though are growing and clever

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

PDM31564

Abstract: 32KX8 64KX16 PDM31048LL PDM31096 PDM31096LL simm 72 pinout 256KX8 SIMM 256kx8 sram 5v
Contextual Info: PRODUCT SELECTOR GUIDE Asynchronous SRAM ORGANIZATION DEVICE TYPE VOLTAGE A CESS TIME NS PIN COUNT PACKAGES AVAILABLE COMMENTS 256K 32Kx8 32Kx8 32KX8 32Kx8 256Kx1 PDM41256 PDM31256 PDM31256LL PDM21256LL PDM41257 5V 3.3V 3.3V 2.7V 5V 8, 10, 12, 15 8, 10, 12, 15, 20

UM61256FK-15

Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch