PDM31 Search Results

Contextual Info: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA

PDM31096

Abstract: PDM31096LL
Contextual Info: PDM31096LL PRELIMINARY 512K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31096LL Active: 65 mW Standby: 10µW The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this

Contextual Info: PDM31024LL PRELIMINARY 128K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31024LL Active: 50 mW Standby: 2µW The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this

Contextual Info: paradìgm ' P R E L IM IN A R Y PDM31548 128K x 16 CMOS 3.3V Static RAM Features Description □ The PDM31548 is a high-performance CMOS static RAM organized as 131,072 x 16 bits. The PDM31548 features low power dissipation using chip enable CE and has an output enable input (OE) for fast

Contextual Info: Paradigm ' PRELIMINARY PDM31024LL 128K x 8-Bit Low Power 3.3 Volt Features Description □ High-speed access times Com'l: 70, 85 and 100ns The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this device is accomplished when the write enable WE

Contextual Info: Pa r a d ig m ' PRELIMINARY PDM31564 256K x 16 CMOS 3.3V Static RAM Features Description □ The PDM31564 is a high-performance CMOS static RAM organized as 262,144 x 16 bits. The PDM31564 features low power dissipation using chip enable CE and has an output enable input (OE) for fast

Contextual Info: PRELIMINARY PARADIGM' PDM31034 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Features Description □ High-speed access times Com'l: 10, 12, 15 and 20 ns Ind'l.: 12,15 and 20 ns □ Low power operation typical - PDM31034SA Active: 200 mW Standby: 15 mW

Contextual Info: paradigm PDM31256LL ' 32K x 8-Bit Low Power 3.3 Volt Features Description □ High-speed access times Com'l: 70, 85 and 100ns The PDM31256LL is a very low power CMOS static RAM organized as 32,768 x 8 bits. Writing to this device is accomplished when the write enable WE

Contextual Info: PARAQGM' P D M 3 1 2 5 6 L 256K 3.3V Static RAM 32K x 8-Bit Low Voltage Features Description n High speed access times Com'l: 12,15, 20, 25, and 35 ns The PDM31256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. This product is produced in Paradigm's proprietary CMOS technol­

Contextual Info: Parad igm ' PRELIMINARY PDM31516 32K x 16 CMOS 3.3V Static RAM Features Description □ The PDM31516 is a high-performance CMOS static RAM organized as 32,768 x 16 bits. The PDM31516 features low power dissipation using chip enable CE and has an output enable input (OE) for fast

Contextual Info: Paradigm ' PRELIMINARY PDM31098 4 Megabit 3.3V Static RAM 1Mx 4-Bit Features Description □ High-speed access times Com'l: 12,15, 20 and 25 ns Ind'l.: 15, 20 and 25 ns □ Low power operation typical - PDM31098SA Active: 300 mW Standby: 25 mW □ Single +3.3V (±0.3V) power supply

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

PDM31516

Contextual Info: PDM31516 32K x 16 CMOS Static SRAM Features Description • The PDM31516 is a high-performance CMOS static RAM organized as 32,768 x 16 bits. This product is produced using Paradigm’s proprietary CMOS technology which offers the designer the highest speed

Contextual Info: PRELIMINARY PDM31028 1 Megabit 3.3V Static RAM 256K x 4-Bit Description Features n High-speed access times Com’l: 12, 15, 17 and 20 ns Ind’l: 15, 17 and 20 ns n Low power operation typical - PDM31028SA Active: 200 mW Standby: 50 mW n n n 1 The PDM31028 is a high-performance CMOS static

Contextual Info: paradìgm PDM31516 ' 32K x 16 CMOS 3.3V Static RAM Features Description □ The PDM31516 is a high-performance CMOS static RAM organized as 32,768 x 16 bits. The PDM31516 features low power dissipation using chip enable CE and has an output enable input (OE) for fast

Contextual Info: Parad igm ' PRELIMINARY PDM31564 256K x 16 CMOS 3.3V Static RAM Features □ □ □ □ □ □ □ □ □ High-speed access times - Com'l: 12,15, 20 and 25 ns - Ind: 15, 20 and 25 ns Low power operation typical - PDM31564SA Active: 300 mW Standby: 25mW

PDM31096

Contextual Info: PDM31096 PRELIMINARY 4 Megabit 3.3V Static RAM 512K x 8-Bit Features n n n n n High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW Description 1 The PDM31096 is a high-performance CMOS static

PDM31516

Contextual Info: PDM31516 PDM31516 32K x 16 CMOS 3.3V Static RAM Description Features n n n n n n n n n 1 The PDM31516 is a high-performance CMOS static RAM organized as 32,768 x 16 bits. The PDM31516 features low power dissipation using chip enable CE and has an output enable input (OE) for fast

PDM41532

Contextual Info: PRELIMINARY PDM31532 64K x 16 CMOS 3.3V Static SRAM Features • ■ ■ ■ ■ ■ ■ ■ ■ High-speed access times - Com’l: 12, 15, 17 and 20 ns - Ind: 15, 17 and 20 ns Low power operation typical - PDM31532SA Active: 200 mW Standby: 50 mW High-density 64K x 16 srchitecture

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 512 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (±0.3V) power supply

Contextual Info: Paradigm ' PDM31256 3.3V 256K Static RAM 32K x 8-Bit Low Voltage Features Description □ High-speed access times Com'l: 12,15 and 20ns Ind'l: 15 and 20ns The PDM31256 is a high-performance CMOS static RAM organized as 32,768 x 8 bits. This product is produced in Paradigm's proprietary CMOS

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (+0.3V) power supply

Contextual Info: PRELIMINARY P D M 3 1 0 2 4 L 1 Megabit 3.3V Static RAM 128K x 8-Bit Low Voltage Features Description □ High speed access times Com'l: 15, 20, 25, 35 and 45 ns The PDM31024L is a high-performance CMOS static RAM organized as 131,072 x 8 bits. This product is