PDM31096SA Search Results

PDM31096

Contextual Info: PDM31096 PRELIMINARY 4 Megabit 3.3V Static RAM 512K x 8-Bit Features n n n n n High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW Description 1 The PDM31096 is a high-performance CMOS static

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 512 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (±0.3V) power supply

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (+0.3V) power supply

PDM31096

Contextual Info: PDM31096 PRELIMINARY 4 Megabit 3.3V Static RAM 512K x 8-Bit Features n n n n n High-speed access times Com’l: 8, 10, 12, 15, and 20 ns Ind’l.: 12, 15 and 20 ns Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW Description 1 The PDM31096 is a high-performance CMOS static

PDM31096

Abstract: a7532
Contextual Info: Paradigm ' PRELIM IN A RY PDM31096 4 Megabit 3.3V Static RAM 512 K x 8-Bit Features Description □ High-speed access times Com'l: 15, 20 and 25 ns Ind'l.: 20 and 25 ns □ Low power operation - PDM31096SA Active: 300 mA Max Standby: 25mW □ Single +3.3V (±0.3V) power supply

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 5 1 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without

PDM31096

Contextual Info: Paradigm ' PRELIMINARY PDM31096 4 Megabit 3.3V Static RAM 51 2 K x 8-Bit Features Description □ High-speed access times Com'l: 8 ,1 0 ,1 2 ,1 5 , and 20 ns Ind'l.: 12,15 and 20 ns The PDM31096 is a high-performance CMOS static RAM organized as 524,288 x 8 bits. Writing is

UM61256FK-15

Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch