OF DIODE 2N222 Search Results

marking dp sot363

Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N301

Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: SOT-223 number code book FREE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a

PIN Diode Basics

Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
Contextual Info: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a

PEAK DETECTOR

Abstract: 2N2222A/ZTX Silicon Detector Corporation ISL8116 simple PEAK DETECTOR PEAK DETECTOR application EL8202 germanium diode ZTX 15 2n2222a making
Contextual Info: Feedback Gives Peak Detector More Precision Application Note May 8, 2007 AN1309.0 Tamara A. Papalias and Mike Wong The standard method for measuring the peak of a signal involves the use of a diode. If the diode is used alone, the input voltage has to be significantly larger than the turn-on

2n3819 replacement

Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device

2n3819 replacement

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.

j305 replacement

Abstract: BC237 mps2907 replacement BC109C replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical

1N5817

Abstract: 2N2222 2N6277 MBRP20060CT
Contextual Info: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —

B2030

Abstract: B-2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

B3045

Abstract: 2N6277
Contextual Info: MBR3045WT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for

HOA0901-11

Abstract: HOA0901-12 HOA0902-11 quadrature mouse phototransistor 2N2222 hfe ir slotted wheel encoder mouse joystick circuit how an INFRARED MOTION DETECTOR works shadow detector circuits HOA0901
Contextual Info: Application Notes Application Note Light Emitting Diode IRED Power Output Specifications A method of specifying power output is to measure the power radiated into a cone whose apex is at the IRED. This cone is the solid angle over which the power output

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2222 circuit

Abstract: 2n2222 PIC12C671 2n2222 TRANSISTOR power transistor 2n2222 data sheet book TRANSISTOR 2N2222 Transistor 2N2222 OF transistor 2N2222 2N2222 transistor datasheet DATA SHEET OF transistor 2N2222
Contextual Info: SIMPLE CIRCUIT Using a PIC12C671 To Create a High Voltage, Low Current, Programmable Switch Power Supply Author: field through the diode into the 220 µF capacitor. The voltage across the capacitor is then sampled back to the A/D. Based on the feedback, the duty cycle of the

Contextual Info: Radiation Tolerant Bulkhead Optocoupler 66280 MICROPAC OPTOELECTRONIC PRODUCTS DIVISION PRELIMINARY 07/11/07 Features: Applications: • • • • • • • • • • High reliability Base lead provided for conventional transistor biasing 850 nm LED, silicon photodiode & 2N2222