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    MTP2N Search Results

    MTP2N Datasheets (99)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MTP2N18
    Fairchild Semiconductor N-channel power MOSFET, 3.5 A, 180V. Scan PDF 152.53KB 5
    MTP2N18
    Motorola European Master Selection Guide 1986 Scan PDF 37.11KB 1
    MTP2N18
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 87.28KB 1
    MTP2N18
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.45KB 1
    MTP2N18
    Unknown FET Data Book Scan PDF 59.35KB 1
    MTP2N18
    National Semiconductor N-Channel Power MOSFETs Scan PDF 28.93KB 1
    MTP2N20
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    MTP2N20
    Fairchild Semiconductor N-channel power MOSFET, 3.5 A, 200V. Scan PDF 152.53KB 5
    MTP2N20
    Motorola Switchmode Datasheet Scan PDF 57.06KB 1
    MTP2N20
    Motorola European Master Selection Guide 1986 Scan PDF 37.11KB 1
    MTP2N20
    Motorola N-channel TMOS power FET. 200 V, 2 A, Rds(on) 1.8 Ohm. Scan PDF 181.46KB 5
    MTP2N20
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 87.28KB 1
    MTP2N20
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.63KB 1
    MTP2N20
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.45KB 1
    MTP2N20
    Unknown FET Data Book Scan PDF 59.35KB 1
    MTP2N20
    National Semiconductor N-Channel Power MOSFETs Scan PDF 28.93KB 1
    MTP2N25
    Motorola Switchmode Datasheet Scan PDF 57.06KB 1
    MTP2N25
    Motorola European Master Selection Guide 1986 Scan PDF 37.11KB 1
    MTP2N25
    Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF 638.03KB 19
    MTP2N25
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 87.28KB 1
    SF Impression Pixel

    MTP2N Price and Stock

    Motorola Semiconductor Products

    Motorola Semiconductor Products MTP2N10E

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    Bristol Electronics MTP2N10E 1,069
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    Motorola Semiconductor Products MTP2N20

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    Bristol Electronics MTP2N20 850
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    Quest Components MTP2N20 16
    • 1 $4.50
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
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    Motorola Semiconductor Products MTP2N60E

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    Bristol Electronics MTP2N60E 460
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    Quest Components () MTP2N60E 368
    • 1 $3.52
    • 10 $3.52
    • 100 $1.76
    • 1000 $1.63
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    MTP2N60E 47
    • 1 $1.75
    • 10 $1.61
    • 100 $1.40
    • 1000 $1.40
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    Motorola Semiconductor Products MTP2N40E

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    Bristol Electronics MTP2N40E 18
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    Motorola Semiconductor Products MTP2N45

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    Bristol Electronics MTP2N45 16
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    Quest Components MTP2N45 4
    • 1 $12.36
    • 10 $9.27
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    MTP2N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF610

    Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
    Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power


    OCR Scan
    IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20 PDF

    mtp2n

    Abstract: mtp2n45
    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N45 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220 MTP2N45 mtp2n mtp2n45 PDF

    mtp2n

    Abstract: mtp2n50
    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N50 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220 MTP2N50 mtp2n mtp2n50 PDF

    mtp3n6u

    Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
    Contextual Info: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2


    OCR Scan
    MTP1N60 O-220AB MTP1N95 MTP3N45 MTP3N50 MTP3N50E mtp3n6u MTP2P45 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50 PDF

    Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    MTP2N60E PDF

    Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2


    OCR Scan
    IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723 PDF

    MTP2N60E

    Abstract: AN569 MTP2N60E MOTOROLA Q348
    Contextual Info: MOTOROLA Order this document by MTP2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    MTP2N60E/D MTP2N60E MTP2N60E/D* MTP2N60E AN569 MTP2N60E MOTOROLA Q348 PDF

    mtp2n

    Abstract: mtp2n55
    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N55 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220 MTP2N55 mtp2n mtp2n55 PDF

    mtp2n

    Abstract: mtp2n40
    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N40 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220 MTP2N40 mtp2n mtp2n40 PDF

    mtp2n

    Abstract: mtp2n35
    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N35 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220 MTP2N35 mtp2n mtp2n35 PDF

    Contextual Info: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ±


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    MTP2N80 O-220) PDF

    IRF610

    Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
    Contextual Info: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power


    OCR Scan
    IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 PDF

    2n50

    Abstract: irf420 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF421 IRF422 IRF423
    Contextual Info: FAIRCHILD SEMICONDUCTOR Û 4 D E j l 3 4 h cl t i 7 4 G D B T im IRF420-423/IRF820-823 r - i U f MTP2N45/2N50 N-Channel Power MOSFETs, 3.0 A, 450 V /50 0 V F A IRCHILD • M a n B B B H B M I A Schlumberger Company Power And Discrete Division_


    OCR Scan
    IRF420-423/IRF820-823 MTP2N45/2N50 O-204AA IRF420 IRF421 IRF422 IRF423 O-220AB IRF820 IRF821 2n50 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF423 PDF

    IRF710

    Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
    Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division


    OCR Scan
    MTP2N35/2N40 O-220AB IRF710/712 MTP2N40 IRF711/TO IRF710-713 IRF710-713 0087m. IRF710 1RF710 2N40 TT 2158 MTP2N35 Ac,713 PDF

    Contextual Info: MTP2N40E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading


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    MTP2N40E MTP2N40E/D PDF

    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    MTP2N60E O-220AB 250Vdc PDF

    MTP2N85

    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N85 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage


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    MTP2N85 O-220 MTP2N85 PDF

    MTP2N85

    Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
    Contextual Info: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 | F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS


    OCR Scan
    MTM2N85 MTM2N90 MTP2N85 MTP2N90 021SBSC 21A-04 O-220AB 0005KS) T0-204M MTP2N90 td 3404 ap n1TM transistor 3405 motorola PDF

    1RF710

    Contextual Info: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100


    OCR Scan
    IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF610 IRF611 IRF612 IRF613 1RF710 PDF

    Contextual Info: MTP2N60E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading


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    MTP2N60E MTP2N60E/D PDF

    MTP-2N50E

    Abstract: mtp2n50e
    Contextual Info: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 3.6 OHM


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    MTP2N50E/D MTP2N50E/D* MTP-2N50E mtp2n50e PDF

    MTP2N90

    Abstract: mtp2n
    Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N90 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage


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    O-220 MTP2N90 MTP2N90 mtp2n PDF

    AN569

    Abstract: MTP2N40E
    Contextual Info: MOTOROLA Order this document by MTP2N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS


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    MTP2N40E/D MTP2N40E MTP2N40E/D* TransistorMTP2N40E/D AN569 MTP2N40E PDF

    GG88

    Abstract: T3901
    Contextual Info: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1


    OCR Scan
    D03711B gg8888Ã T-39-01 GG88 T3901 PDF