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MTP2N Datasheets (99)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MTP2N18	Fairchild Semiconductor	N-channel power MOSFET, 3.5 A, 180V.	Scan	PDF	152.53KB	5
MTP2N18	Motorola	European Master Selection Guide 1986	Scan	PDF	37.11KB	1
MTP2N18	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	87.28KB	1
MTP2N18	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	118.45KB	1
MTP2N18	Unknown	FET Data Book	Scan	PDF	59.35KB	1
MTP2N18	National Semiconductor	N-Channel Power MOSFETs	Scan	PDF	28.93KB	1
MTP2N20	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
MTP2N20	Fairchild Semiconductor	N-channel power MOSFET, 3.5 A, 200V.	Scan	PDF	152.53KB	5
MTP2N20	Motorola	Switchmode Datasheet	Scan	PDF	57.06KB	1
MTP2N20	Motorola	European Master Selection Guide 1986	Scan	PDF	37.11KB	1
MTP2N20	Motorola	N-channel TMOS power FET. 200 V, 2 A, Rds(on) 1.8 Ohm.	Scan	PDF	181.46KB	5
MTP2N20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	87.28KB	1
MTP2N20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	116.63KB	1
MTP2N20	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	118.45KB	1

MTP2N20	Unknown	FET Data Book	Scan	PDF	59.35KB	1
MTP2N20	National Semiconductor	N-Channel Power MOSFETs	Scan	PDF	28.93KB	1
MTP2N25	Motorola	Switchmode Datasheet	Scan	PDF	57.06KB	1
MTP2N25	Motorola	European Master Selection Guide 1986	Scan	PDF	37.11KB	1
MTP2N25	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF	638.03KB	19
MTP2N25	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	87.28KB	1

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Motorola Semiconductor Products


Motorola Semiconductor Products MTP2N10E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N10E		1,069			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTP2N20 N Channel Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N20		850			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MTP2N20		16			1 $4.50 10 $2.25 100 $2.25 1000 $2.25 10000 $2.25	Buy Now
Motorola Semiconductor Products MTP2N60E Trans MOSFET N-CH Si 600V 2A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N60E		390			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	MTP2N60E		312			1 $3.50 10 $3.50 100 $1.75 1000 $1.62 10000 $1.62	Buy Now
	MTP2N60E		47			1 $1.75 10 $1.61 100 $1.40 1000 $1.40 10000 $1.40	Buy Now
Motorola Semiconductor Products MTP2N40E Trans MOSFET N-CH Si 400V 2A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N40E		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTP2N45 N-Channel Enhancement Mode Silicon Gate TMOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP2N45		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	MTP2N45		4			1 $12.36 10 $9.27 100 $9.27 1000 $9.27 10000 $9.27	Buy Now
	MTP2N45		4			1 $12.36 10 $9.27 100 $9.27 1000 $9.27 10000 $9.27	Buy Now

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MTP2N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRF610 Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20 Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power	OCR Scan	irf610-613 mtp2n18/2n20 o-22qab irf610 +8irf611 irf612 irf613 mtp2n18 nitp2n20 irf610/612 irf p 611 mtp2n20	PDF
mtp2n Abstract: mtp2n45 Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N45 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	o-220 mtp2n45 mtp2n	PDF
mtp2n Abstract: mtp2n50 Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N50 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	o-220 mtp2n50 mtp2n	PDF
mtp3n6u Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50 Contextual Info: - 286 - m % ít f ft X t Vd s or * Vd g € V £ n fé (Ta=25tî) Vos (V) Pd Id I gss * /CH * /CH (A) (W) (nA) MTP1N6Û MOT N 600 ±20 1.0 40 MTP1N95 MOT N 950 ±20 1 75 MTP2N18 MOT N 180 ±20 2.0 50 MTP2N20 MOT N 20Q ±20 2.0 50 MTP2N25 MOT N 250 ±20 2	OCR Scan	mtp1n60 o-220ab mtp1n95 mtp3n45 +10mtp3n50 mtp3n50e mtp3n6u mtp2p45 mtp2n20 mtp2n25 mtp2n35 mtp2n40 mtp2n45 mtp2n50	PDF
Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	Original	mtp2n60e	PDF
Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2	OCR Scan	irf620 irf621 irf622 irf623 +6mtp7n18 mtp7n20 irf720 irf721 irf722 irf723	PDF
MTP2N60E Abstract: AN569 MTP2N60E MOTOROLA Q348 Contextual Info: MOTOROLA Order this document by MTP2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination	Original	mtp2n60e/d mtp2n60e an569 mtp2n60e motorola +1q348	PDF
mtp2n Abstract: mtp2n55 Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N55 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	o-220 mtp2n55 mtp2n	PDF
mtp2n Abstract: mtp2n40 Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N40 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	o-220 mtp2n40 mtp2n	PDF
mtp2n Abstract: mtp2n35 Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N35 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	o-220 mtp2n35 mtp2n	PDF
Contextual Info: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS MMN'. -I-! •H B h- 1 ±	Original	mtp2n80 o-220	PDF
IRF610 Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18 Contextual Info: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power	OCR Scan	irf610-613 mtp2n18/2n20 irf610/612 nitp2n20 +11mtp2n18 irf611/613 pcu100f irf610 1rf610-613 1rf610 irf612 irf611 irf613 mtp2n20 irf 613	PDF
2n50 Abstract: irf420 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF421 IRF422 IRF423 Contextual Info: FAIRCHILD SEMICONDUCTOR Û 4 D E j l 3 4 h cl t i 7 4 G D B T im IRF420-423/IRF820-823 r - i U f MTP2N45/2N50 N-Channel Power MOSFETs, 3.0 A, 450 V /50 0 V F A IRCHILD • M a n B B B H B M I A Schlumberger Company Power And Discrete Division_	OCR Scan	irf420-423/irf820-823 mtp2n45/2n50 o-204aa irf420 +11irf421 irf422 irf423 o-220ab irf820 irf821 2n50 mtp2n45 st 2n50 1rf820 mtp2n50	PDF
IRF710 Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713 Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division	OCR Scan	mtp2n35/2n40 o-220ab irf710/712 mtp2n40 +9irf711/to irf710-713 0087m irf710 1rf710 2n40 tt 2158 mtp2n35 ac,713	PDF

Contextual Info: MTP2N40E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading	Original	mtp2n40e mtp2n40e/d	PDF
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	mtp2n60e o-220ab 250vdc	PDF
MTP2N85 Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N85 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	mtp2n85 o-220	PDF
MTP2N85 Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85 Contextual Info: IM E M O TO RO LA SC X S T R S / R D I b 3 b 7 2 S 4 Q Q f i'n b ö 5 \| F M O TO R O LA • SEMICONDUCTOR T E C H N IC A L D A T A MTM2N85 MTM2N90 MTP2N85 MTP2N90 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS	OCR Scan	mtm2n85 mtm2n90 mtp2n85 mtp2n90 +8021sbsc 21a-04 o-220ab 0005ks t0-204m td 3404 ap n1tm transistor 3405 motorola	PDF
1RF710 Contextual Info: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C\|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100	OCR Scan	irf510 irf511 irf512 irf513 +7mtp4n08 mtp4n10 irf610 irf611 irf612 irf613 1rf710	PDF
Contextual Info: MTP2N60E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading	Original	mtp2n60e mtp2n60e/d	PDF
MTP-2N50E Abstract: mtp2n50e Contextual Info: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 3.6 OHM	Original	mtp2n50e/d mtp-2n50e mtp2n50e	PDF
MTP2N90 Abstract: mtp2n Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N90 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage	Original	o-220 mtp2n90 mtp2n	PDF
AN569 Abstract: MTP2N40E Contextual Info: MOTOROLA Order this document by MTP2N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS	Original	mtp2n40e/d mtp2n40e transistormtp2n40e/d an569	PDF
GG88 Abstract: T3901 Contextual Info: This N-Channel Power MOSFETs IRF510 By IRF512 Its IRF513 MTP4N10 IRF610 IRF612 MTP2N18 MTP2N20 IRF711 C rw Max PR Min Max (PR Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 f1 4.5 1 0.8 2 7.5 200 100 30 A1	OCR Scan	d03711b gg8888 t-39-01 gg88 +1t3901	PDF

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MTP2N Datasheets (99)

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Motorola Semiconductor Products MTP2N10E

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Motorola Semiconductor Products MTP2N60E

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