MTP2N Search Results
MTP2N Datasheets (99)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTP2N18 |
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N-channel power MOSFET, 3.5 A, 180V. | Scan | 152.53KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N18 |
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European Master Selection Guide 1986 | Scan | 37.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N18 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 87.28KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N18 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 118.45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N18 | Unknown | FET Data Book | Scan | 59.35KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N18 |
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N-Channel Power MOSFETs | Scan | 28.93KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 |
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N-channel power MOSFET, 3.5 A, 200V. | Scan | 152.53KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 |
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Switchmode Datasheet | Scan | 57.06KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 |
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European Master Selection Guide 1986 | Scan | 37.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 |
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N-channel TMOS power FET. 200 V, 2 A, Rds(on) 1.8 Ohm. | Scan | 181.46KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 87.28KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 116.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 118.45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTP2N20 | Unknown | FET Data Book | Scan | 59.35KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N20 |
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N-Channel Power MOSFETs | Scan | 28.93KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N25 |
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Switchmode Datasheet | Scan | 57.06KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N25 |
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European Master Selection Guide 1986 | Scan | 37.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N25 |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 | Scan | 638.03KB | 19 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MTP2N25 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 87.28KB | 1 |
MTP2N Price and Stock
Motorola Semiconductor Products MTP2N10E |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTP2N10E | 1,069 |
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Get Quote | |||||||
Motorola Semiconductor Products MTP2N20 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTP2N20 | 850 |
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MTP2N20 | 16 |
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Motorola Semiconductor Products MTP2N60E |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTP2N60E | 460 |
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Get Quote | |||||||
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MTP2N60E | 368 |
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Motorola Semiconductor Products MTP2N40E |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTP2N40E | 18 |
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Get Quote | |||||||
Motorola Semiconductor Products MTP2N45 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTP2N45 | 16 |
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Get Quote | |||||||
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MTP2N45 | 4 |
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Buy Now |
MTP2N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRF610
Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
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OCR Scan |
IRF610-613 MTP2N18/2N20 O-22QAB IRF610 IRF611 IRF612 IRF613 MTP2N18 NITP2N20 IRF610/612 IRF610 IRF612 irf P 611 IRF611 IRF613 MTP2N18 MTP2N20 | |
mtp2n
Abstract: mtp2n45
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O-220 MTP2N45 mtp2n mtp2n45 | |
mtp2n
Abstract: mtp2n50
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O-220 MTP2N50 mtp2n mtp2n50 | |
mtp3n6u
Abstract: MTP2P45 MTP1N60 MTP1N95 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50
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OCR Scan |
MTP1N60 O-220AB MTP1N95 MTP3N45 MTP3N50 MTP3N50E mtp3n6u MTP2P45 MTP2N20 MTP2N25 MTP2N35 MTP2N40 MTP2N45 MTP2N50 | |
Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination |
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MTP2N60E | |
Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2 |
OCR Scan |
IRF620 IRF621 IRF622 IRF623 MTP7N18 MTP7N20 IRF720 IRF721 IRF722 IRF723 | |
MTP2N60E
Abstract: AN569 MTP2N60E MOTOROLA Q348
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MTP2N60E/D MTP2N60E MTP2N60E/D* MTP2N60E AN569 MTP2N60E MOTOROLA Q348 | |
mtp2n
Abstract: mtp2n55
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O-220 MTP2N55 mtp2n mtp2n55 | |
mtp2n
Abstract: mtp2n40
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O-220 MTP2N40 mtp2n mtp2n40 | |
mtp2n
Abstract: mtp2n35
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O-220 MTP2N35 mtp2n mtp2n35 | |
Contextual Info: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ± |
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MTP2N80 O-220) | |
IRF610
Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
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OCR Scan |
IRF610-613 MTP2N18/2N20 IRF610/612 NITP2N20 MTP2N18 IRF611/613 PCU100F IRF610 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 | |
2n50
Abstract: irf420 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF421 IRF422 IRF423
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OCR Scan |
IRF420-423/IRF820-823 MTP2N45/2N50 O-204AA IRF420 IRF421 IRF422 IRF423 O-220AB IRF820 IRF821 2n50 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF423 | |
IRF710
Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
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OCR Scan |
MTP2N35/2N40 O-220AB IRF710/712 MTP2N40 IRF711/TO IRF710-713 IRF710-713 0087m. IRF710 1RF710 2N40 TT 2158 MTP2N35 Ac,713 | |
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Contextual Info: MTP2N40E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading |
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MTP2N40E MTP2N40E/D | |
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP2N60E CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: |
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MTP2N60E O-220AB 250Vdc | |
MTP2N85Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP2N85 TO-220 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage |
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MTP2N85 O-220 MTP2N85 | |
MTP2N85
Abstract: MTP2N90 td 3404 ap n1TM transistor 3405 motorola MTM2N85
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OCR Scan |
MTM2N85 MTM2N90 MTP2N85 MTP2N90 021SBSC 21A-04 O-220AB 0005KS) T0-204M MTP2N90 td 3404 ap n1TM transistor 3405 motorola | |
1RF710Contextual Info: N-Channel Power MOSFETs IRF510 IRF512 IRF513 MTP4N08 MTP4N10 IRF612 MTP2N18 MTP2N20 IRF711 •d nC Qfl Max C|M (pF) M in Max Co m (PF) Min Max 7.5 200 100 30 A1 2 7.5 200 100 30 A1 0.8 2 7.5 200 100 30 A1 0.25 0.8 2 7.5 200 100 30 4.5 1 0.8 2 7.5 200 100 |
OCR Scan |
IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF610 IRF611 IRF612 IRF613 1RF710 | |
Contextual Info: MTP2N60E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading |
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MTP2N60E MTP2N60E/D | |
MTP-2N50E
Abstract: mtp2n50e
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Original |
MTP2N50E/D MTP2N50E/D* MTP-2N50E mtp2n50e | |
MTP2N90
Abstract: mtp2n
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O-220 MTP2N90 MTP2N90 mtp2n | |
AN569
Abstract: MTP2N40E
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Original |
MTP2N40E/D MTP2N40E MTP2N40E/D* TransistorMTP2N40E/D AN569 MTP2N40E | |
GG88
Abstract: T3901
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OCR Scan |
D03711B gg8888Ã T-39-01 GG88 T3901 |