1N50E
Abstract: t1n50e MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 T1-N50E
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage
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DM 0265 R
Abstract: AN569 MTD1N50E SMD310
Contextual Info: MOTOROLA Order this document by MTD1N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N50E Motorola Preferred Device TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS on = 5.0 OHM N–Channel Enhancement–Mode Silicon Gate
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t1n50e
Abstract: 1N50E T1-N50E 7-14-C MTD1N50E1 AN569 MTD1N50E MTD1N50ET4 SMD310
Contextual Info: MTD1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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transistor Electronic ballast "INDUCTION LAMP"
Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic
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an1543/dan1543transistor electronic ballast "induction lampschematic diagram electronic ballast hid+8motorola, an1049mc14046an1049eb4075000 watts pure sine wave inverter schematic diagraminduction lampelectronic ballast for fluorescent lighting t8motorola br480/d
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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mgb20n40cl
Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to
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smalles40fmgp5n60emgp20n60mgw20n60d+15mgw30n60mgy30n60dmgy40n60mgy40n60dmgw12n120mgw12n120dmgb20n40clmgb20n40mgb20n35clmtd1n60e1motorola automotive transistor coil ignitionmtsf3n03hdmotorola master selection guidemtd20n06hdmtd20n06v
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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transistor marking code 12W SOT-23
Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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sg388/daug-1999r14153transistor marking code 12w sot-23+9mgb20n40cllaptop charging crbkp series stepper motor japan servo co2n3773 power amplifier circuit diagramsmj2955 transistorpwm brush dc motor controller sg3526sg3526 boostcontroller for pwm fan tl494tip122 tip127 mosfet audio amp
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MJDI22
Contextual Info: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25
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mjd340mjd47mjd50mjd13003+6mjd350mjd57311k/12kmjd31mjd31cmjdi22
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TB20N20E
Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
Contextual Info: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01
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CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .
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transistor Electronic ballast "INDUCTION LAMP"
Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
Contextual Info: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.
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A Listing and Cross Reference of Available Technical Literature from ON Semiconductor
Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
Contextual Info: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs
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sg385/djul-2000ot-223ot-23+12sc-70/sot-323mtp75n06hdr14525a listing and cross reference of available technical literature from on semiconductormmdf3n06vlmmsf4205mmsf4p01hdr1mtb3n100emtd1p50etransistor booktransistor sot23 to4 36igbt manual
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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CFL electronic ballast
Abstract: AN1543 Electronic Lamp Ballast Design mc34262 1N4937 AN1576 MPIC2151 MPIC2151P MPSA42 ELECTRONIC BALLAST circuit DIAGRAMs MUR180
Contextual Info: MOTOROLA Order this document AN1576 by AN1576/D SEMICONDUCTOR APPLICATION NOTE AN1576 Reduce Compact Fluorescent Cost IGBT with Motorola's PowerLux Prepared by: Michael BAIRANZADE MOTOROLA semiconductors Power Products Division Toulouse * France previous issue: 1.0
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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MBRD2060CT
Abstract: MBRD20100CT MTD2955 sot-223 MLL34 mbrd20100
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b?2SM ODTbSSB 0 ■ M 0 Tb 7'''33V7 DPAK DEVICES (continued) TMOS Power MOSFETs Device » rPS(on¡ @ te Ohms Max Amp» *D(cont! Amps 4 6 6 5 0.4 1.5 1.5 0.7 0.3 0.25 0.5 0.6 0.6 0.12 0.6 0.15 0.18 0.3 0.1 0.6 0.4 1 0.5 0.5
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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mgb20n40cl
Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to
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UC3843 spice model
Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
Contextual Info: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,
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MSC1621
Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the
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MTD1N45
Contextual Info: MOTOROLA SC XSTRS/R F IME D I fc>3b?254 OdiOMOS T I O rder th is data sheet by MTD1N45/D T - ò f- n MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA iT Designer's Data Sheet ^ M TD 1N 45 M TD 1N 50 Pow er Field Effect Transistors N -C h ann el E n h a n c e m en t-M o d e
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