TB33N10E Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M TB33N10E/D Designer's Data Sheet TMOS E-FET ™ High E n e r g y P o w e r F ET D2P AK for S u r f a c e M o u n t MT B 3 3 N1 0 E Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS

33N10E

Contextual Info: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate

TB20N20E

Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
Contextual Info: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the