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    onsemi MTB20N20ET4

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    TB20N20E Datasheets Context Search

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    TB20N20

    Contextual Info: MOTOROLA Order this document by TB20N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB20N20E T M O S E-FET™ Motorola Preferred Device High Energy Pow er FET D 2 p a k for S urface Mount TMOS POWER FET 20 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		MTB20N20E/D TB20N20E TB20N20 PDF

    TB20N20E

    Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
    Contextual Info: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01


    OCR Scan     		314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M PDF