MPS6507
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. 'c ^CBO ^CEO V EBO (V) Min (V) Min (VI Min MPS3711 30 30 6 0.625 0.05 MPS3903 60 40 6 0.625 0.2 PD (W) (A) @Tc=25Gc *C80 ^CB 'c es
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mps6514mps6520mps6521mps6s30+7mps6531mps6532mps6539mps6540mps6541o-92-3mps6507
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MPS3709
Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646
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mps3563mps3646mps3693nips3694+13mps6507mps651mps6511mps6512mps6513mps6514mps3709mps3704mps3705mps3706mps3707mps3708mps3710
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2N915
Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:
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dmb1052c39042n9152n916+132n27162n29232n29242n29252n29262n33902n2926 transistormps33912n37102n2924 transistor2n3904 diemps3394mps3392
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Contextual Info: <^£.tni-don.auctoi ^Pioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS6576 MAXIMUM RATINGS Symbol Value Unit Collector-Emittar Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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PN2222A MOTOROLA
Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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rn5816rn5b16rn5818hse125+15hse210hse1712nl0512n24802n2479pn2222a motorolavalvoemihusphilco-fordvalvo gmbh2sc1330diode 6aa2n709aelcomakt503a
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MPS3563
Abstract: MPS3646 MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3709
Contextual Info: TO-92 Plastic Package Transistore NPN Maximum Ratings Type No. ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) (A) 0Tc=25“( 'cBO ^C 8 'ces ^C E (UA) (V> (UA) Max Max MPS3563 30 12 2
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mps3563mps3646mps3693mps3694+12mps650mps6507mps651mps6511mps6512mps6513mps3704mps3705mps3706mps3707mps3708mps3709
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bcs47
Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
Contextual Info: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter
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o-92-1o-92-2o-92-3o-92-4+15pn5179pn5449pn5b16pn7055tis87bcs47bcs48bc170c8c548bf494 ph 06bc170bbf494 ph 04cd639bcs48bbf238
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PN222A
Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30
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bs011300d37773pn3566pn3641+15pn3643pn4141pn4142pn5449tn2219o-237pn222a2n2222a to-92bsr142n3904 to-92 typepn5442ns904mps6574npn transistor 2n2222a in t0-92 packagetransistor 2n2222a
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MPS6544
Abstract: MPS6516 MPS-6544 MPS6512 MPS6513 MPS6515 MPS6519 2N4125 MPS6514 MPS6517
Contextual Info: MOTOROLA SC 6367254 -C XS TR S /R MOTOROLA SC J> F |fc .3 b 7 2 S M QDfllflll "i FJ 96D 8 1 8 11 XSTRS/R F 1 ' MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 V ceo Collector-Base Voltage
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-p-21-21mps6512mps6513mps6514+8mps6515mps6516mps6518mps6519mps6544mps-65442n4125mps6517
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MPS2222
Abstract: MPS2222A MPS2713 MPS2714 MPS3393 MPS3394 MPS3395 MPS3396 MPS651 MPS706
Contextual Info: CDIL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Pd 'c (W) (V) (A) Min @Tc=25°c V CBO ^CEO (V) Min (V) Min MPS651 80 60 . 5 MPS706 25 15 MPS834 40 MPS2222 60 MPS2222A 75 30 40* Electrical Characteristics (Ta=25°C, Unless Otherwise Specified)
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mps651mps706mps2222mps2222a+6mps2713mps2714mps3393mps3394mps3395mps3396
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transistor SM 2174
Abstract: MPS-92 MPS929
Contextual Info: MOTOROLA SC «STRS/R 6367254 F> T T ~ ^ | f e 3 t 7 a s4 MOTOROLA SC OOai?tb 8 96D 8 1 7 6 6 XSTRS/R F T-2S-21 MPS929 MPS930A MAXIMUM RATINGS Symbol MPS929 MPS930A Unit Collector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc V e BO 5.0
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t-2s-21mps929mps930ao-226aa+2transistor sm 2174mps-92
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N3609
Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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rn5816rn5b16rn5818hse125+15hse210hse1712nl0512n24802n24792n36092n36332n35202n3618 motorola2sc1330transitron2n3543kt503alow-power silicon npn2n3625
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1n456cpd641n456a1n457+121n457a1n458bf244 datasheet2n5133 equivalentmps5771bd345bd347bf2442n5248bf2562n33042n5910
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PN544
Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Contextual Info: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300
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t-29-oft-29-01pn544ti59+8national 2n38592n27122n915mpq2222mpq6700t1890tn2219pn101
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MPS6511
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO V CEO V EBO (V) (V) (V) PD (W) *c (A) Min Min Min Tc=25°( MPS3563 30 12 2 0.625 0.05 0.05 MPS3646 40 15 5 0.625 0.3 MPS3693
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mps3563mps3646mps3693mps3694+6mps3704mps3705mps3706mps3707mps3708mps6511
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2N5133
Abstract: TIS92 2N4286 cm 45-12 MPS6566 transistor 2N2712 2N3707 2N3827 2N915
Contextual Info: NATL SENICOND 6 5 0 1130 NATL {D ISCRETE} SEMICOND, àfl <D I S C R E T E L ' DeT| b S G H S D 00353^ 5 28C 35 3 9 5 o ' S O “ ' w •</) c Ç0 u. eg « Z 3 5 Q . Z ■gu. g 2 - E Ï— H < X « S es = > if o3 I « § £ * >u HI — >U S M in in in -U 1
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tsd113dhsd113d2n5133tis92+72n4286cm 45-12mps6566 transistor2n27122n37072n38272n915
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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ST3904
Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.
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st3904ns3903tis922n2926+6ns39042n2926 ses2n915mpq39042n36942n2712
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mps3904
Abstract: MPS3903 MPS3904 transistor To92 transistor
Contextual Info: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd
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mps3903mps3904o-226aamps3904 transistor+1to92 transistor
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PN222A
Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250
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bs0113q0d37773pn3566pn3641+10pn3643pn4141pn4142pn5449tn22192n1613pn222a2n2222a to-922n3904 to-92 typeto236 2n2222a
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