MPS6516 Search Results

Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

MPS6516

Abstract: MPS6519 MPS6517 MPS6518 E3060
Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. MPS4355 MPS4356 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 60 60 5 80 80 5 P 'CES (W) @Tc=25"c (MA) (V) (pA) Max Max 0.625 0.5 0.625 0.5 MPS6515 40 25 4 0.625 0.1 MPS6516 40 .40 4 0.625 0.1 MPS6517

MPS6515

Abstract: MPS6512 MPS6516 MPS6517 MPS6518 mps*512 MPS6513 MPS6514 MPS6519
Contextual Info: MPS6512 thru MPS6515/MPS6516 thru MPS6519 continued MPS6512 thru MPS6515 (NPN) E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25*Cunle*sotherw isenotad) Characteristic Symbol Min bvceo 30 25 - - bv ebo 4 .0 - - | Typ Max | Unit OFF CHARACTERISTICS

MPS6515

Abstract: MPS6519 MPS6512 MPS6516 MPS6513 MPS6518 transistor mps6515 MPS6514
Contextual Info: MPS6512 thru MPS6515 NPN SILICON MPS6516 thru MPS6519 PNP (SILICON) SILIC O N A N N U L A R SILICO N C O M PLEM EN TAR Y A M P LIF IER T R A N SIST O R S T R A N SIST O R S . . .designed for general-purpose am plifier applications and for complementary circu itry.

MPS6544

Abstract: MPS6516 MPS-6544 MPS6512 MPS6513 MPS6515 MPS6519 2N4125 MPS6514 MPS6517
Contextual Info: MOTOROLA SC 6367254 -C XS TR S /R MOTOROLA SC J> F |fc .3 b 7 2 S M QDfllflll "i FJ 96D 8 1 8 11 XSTRS/R F 1 ' MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 V ceo Collector-Base Voltage

transistor mps6515

Abstract: MPS6519 MPS6515 complementary npn-pnp MPS6518 equivalent semiconductor mps6516 MPS6512 MPS6518 MPS6517 complementary npn-pnp power transistors
Contextual Info: DATA SHEET NPN MPS6512 MPS6513 MPS6514 MPS6515 PNP MPS6516 MPS6517 MPS6518 MPS6519 COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series NPN and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications.

MPS6516

Abstract: MPS6519 mps6518
Contextual Info: UHM IVII V V V I V PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

MPS6519 motorola

Abstract: mps6515 mps6512 mps6518 mps6513 TRANSISTOR MPS6514 MPS6517 MPS6519 transistor mps6515
Contextual Info: Tb M O T O R O L A SC -CXSTRS/R FJ 6367254 MOTOROLA SC XSTRS/R F DF|t3b72SM QDÛlflll 96D 8 1 8 1 1 1 ' M AXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 VCEO Collector-Base Voltage MPS6512 thru MPS6515

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MPS6716 MPS6717 Symbol MPS6516 MPS6517 Collector-Emitter Voltage V C EO 60 80 Vdc Collector-Base Voltage v CBO 60 80 Vdc Emitter-Base Voltage v E BO 5.0 Vdc Collector Current — C ontin uo us 'C 500 m A dc Total Device D issipation @ T/^ = 25°C

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

2N5227

Abstract: 2N3905 MOTOROLA MPS3906 mmt3905 2n995 mm3906 MPS5139 SILICON DICE motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 6367255 - MOTOROLA ~34 SC D E ~ | b ib 7 a 5 5 <D I O D E S / O P T O 3<tC SILICON SMALL-SIGMAL TRANSISTOR DICE continued) □ □ 3 7 CH 3 □ 37993 T - 3 7 - tsr^ 2C3906 DIE NO. — PNP LINE SOURCE — DMB155 This die provides performance similar to that of the following device types:

Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10

MPS5308

Abstract: CRB 1.0 m MPSA18 MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPS5306
Contextual Info: Small Signal Transistors TO-92 Case Continued TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE (V) VCB (V) 20 MIN 90 MAX 330 MAX 6.0 *ICES *ICEV MAX 100 hFE @ VCE @ IC VCE (SAT) @ IC *hFE (1kHZ) (V) (mA) (V) (mA) Cob fT NF toff MPS3710 NPN LOW NOISE EBC MIN

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

MDA920A4

Abstract: full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b
Contextual Info: SECTION 6 APPLICATIONS Edited and Updated PORTION OF WAVEFORM APPLIED TO LOAD Because they are reliable solid state switches, thyristors have many applications, especially as controls. One of the most common uses for thyristors is to control ac loads such as electric motors. This can be done either by

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

MMBT3905

Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365