MBRB1045T4G
Contextual Info: MBRB1045 Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb1045mbrb1045/dmbrb1045t4g |
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NTE6085
Abstract: Schottky diode TO220 15A 1000V
Contextual Info: NTE6085 Silicon Dual Schottky Rectifier Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction
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B2060g
Abstract: b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G
Contextual Info: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf2060ctmbrf2060ct/db2060gb2060+5221d-03221dmbrf2060ctgb2060 akaschottky barrier rectifier aka
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MBRB1045
Abstract: MBRB1045T4 SMD310
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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mbrb1045o-220r14525mbrb1045/d+2mbrb1045t4smd310
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MBRB1045
Abstract: MBRB1045T4 418B SMD310
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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mbrb1045o-220rmbrb1045/dmbrb1045t4+2418bsmd310
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B2535LG
Abstract: aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG
Contextual Info: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb2535ctlgnrvbb2535ctlgmbrb2535ctl/db2535lg+2aka b2535lgppap manual for automotive industry
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B2535L diode
Abstract: b2535l
Contextual Info: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb2535ctlmbrb2535ctl/db2535l diodeb2535l |
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aka B2535LG
Abstract: NRVBB2535CTLG
Contextual Info: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb2535ctlgnrvbb2535ctlgmbrb2535ctl/daka b2535lg |
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b2535l
Abstract: B2535 B2535L diode
Contextual Info: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb2535ctlb2535lb2535b2535l diode |
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b2535lg
Abstract: aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28
Contextual Info: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb2535ctlmbrb2535ctl/db2535lgaka b2535lg+7b2535b2535lb2535l diodembrb2535ctlgmbrb2535ctlt4mbrb2535ctlt4g2cw28
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B2060G
Contextual Info: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf2060ctmbrf2060ct/db2060g |
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D2PAK marking 30
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb1045d2pak marking 30 |
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B20100G
Abstract: B20100G diode AKA B20100 B20100G AKA B20100G on aka AKA B20100G B20100G diode AKA B20100 AKA B20100G to220 b20100
Contextual Info: MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf20100ctmbrf20100ct/db20100gb20100g diode+8aka b20100b20100g akab20100g on akaaka b20100gb20100g diode akab20100 akab20100g to220b20100
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MBRF1545CT
Contextual Info: MBRF1545CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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B20200G
Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf20200ctmbrf20200ct/db20200gb20200g aka+7b20200schottky barrier rectifier aka221dmbrf20200ctg1505cb2020rectifier diodes on semiconductor
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B2060g
Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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B2515LG
Contextual Info: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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mbrb2515lmbrb2515l/db2515lg |
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B2515LG
Abstract: B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G
Contextual Info: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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Schottky diode TO220 15A 1000V
Abstract: NTE6085 "Dual Schottky Rectifier" transistor working principle Schottky diode TO220
Contextual Info: NTE6085 Silicon Dual Schottky Rectifier 45V, 15 Amp, TO220 Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction
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nte6085schottky diode to220 15a 1000vdual schottky rectifiertransistor working principle+1schottky diode to220
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b20100
Abstract: B20100 diode MBRF20100CT
Contextual Info: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf20100ctan1040b20100b20100 diode |
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b2545g
Abstract: B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf2545ctmbrf2545ct/db2545gb2545 aka+7b2545b2545g akab2545g diodeb2545g schottky barrier rectifier aka221d-03mbrf2545ctgb2545 transistor manual
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b2545
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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b2545g
Abstract: B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf2545ctmbrf2545ct/db2545gb2545g diode+3b2545g akab2545 akab2545g schottky barrier rectifier aka
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B20200
Abstract: B20200 on
Contextual Info: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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mbrf20200ctan1040b20200b20200 on |
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