Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    B20200G Search Results

    SF Impression Pixel

    B20200G Price and Stock

    Select Manufacturer

    Vishay Intertechnologies VB20200G-E3/8W

    20A,200V,DUAL TRENCH SKY RECT. - Tape and Reel (Alt: VB20200G-E3/8W)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas VB20200G-E3/8W Tape & Reel 7 Weeks 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.74
    		Buy Now
    TTI VB20200G-E3/8W Reel 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.75
    		Buy Now
    EBV Elektronik VB20200G-E3/8W 23 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies VB20200G-E3/4W

    20A,200V,DUAL TRENCH SKY RECT. - Rail/Tube (Alt: VB20200G-E3/4W)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas VB20200G-E3/4W Tube 7 Weeks 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.75
    		Buy Now
    TTI VB20200G-E3/4W Tube 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.76
    		Buy Now

    Amphenol PCD ALBFLB20200GRIND

    Fairlead Block; |Amphenol Pcd ALBFLB20200GRIND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark ALBFLB20200GRIND Bulk 100
    • 1 -
    • 10 -
    • 100 $67.20
    • 1000 $66.39
    • 10000 $66.39
    		Buy Now
    Interstate Connecting Components ALBFLB20200GRIND
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    B20200G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B20200G

    Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
    Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		mbrf20200ctmbrf20200ct/db20200gb20200g aka+5b202005m marking code schottky diode1505c221dmbrf20200ctg PDF

    B20200G

    Abstract: SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode
    Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


    Original     		mbr20200ctmbr20200ct/db20200gschottky barrier rectifier aka+5b20200g akab20200mbr20200ct-gmbr20200ctgb20200 diode PDF

    B20200G

    Abstract: B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4
    Contextual Info: MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


    Original     		mbrb20200ctmbrb20200ct/db20200gb20200g aka+7schottky barrier rectifier akadiode marking ww1b20200marking code ww1j1702mbrb20200ctgmbrb20200ctt4 PDF

    B20200G

    Contextual Info: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		mbrj20200ctgmbrj20200ct/db20200g PDF

    B20200G

    Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
    Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		mbrf20200ctmbrf20200ct/db20200gb20200g aka+7b20200schottky barrier rectifier aka221dmbrf20200ctg1505cb2020rectifier diodes on semiconductor PDF

    B20200G

    Abstract: B20200G AKA MBRB20200CTT4G B20200 MBRB20200CT MBRB20200CTG MBRB20200CTT4 SCHOTTKY BARRIER RECTIFIER aka
    Contextual Info: MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


    Original     		mbrb20200ctmbrb20200ct/db20200gb20200g aka+5mbrb20200ctt4gb20200mbrb20200ctgmbrb20200ctt4schottky barrier rectifier aka PDF

    B20200G AKA

    Abstract: B20200G
    Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		mbrf20200ctmbrf20200ct/db20200g akab20200g PDF

    B20200G

    Abstract: 418B-04 B20200G AKA b20200 D2PAK SCHOTTKY BARRIER RECTIFIER aka SBRB20200 PPAP MANUAL
    Contextual Info: MBRB20200CTG, SBRB20200CTT4G SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


    Original     		mbrb20200ctgsbrb20200ctt4gaec-q101mbrb20200ct/d+8b20200g418b-04b20200g akab20200d2pakschottky barrier rectifier akasbrb20200ppap manual PDF

    B20200G AKA

    Contextual Info: MBRB20200CTG, SBRB20200CTT4G SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V


    Original     		mbrb20200ctgsbrb20200ctt4gmbrb20200ct/db20200g aka PDF

    B20200G

    Abstract: B20200G AKA b20200 b20200 diode B2020 221D-03 1505C 221D MBRF20200CT MBRF20200CTG
    Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		mbrf20200ctmbrf20200ct/db20200gb20200g aka+7b20200b20200 diodeb2020221d-031505c221dmbrf20200ctg PDF