D2PAK Search Results

b2545g

Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
Contextual Info: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 

SMD L4 Regulator SOT-223

Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG
Contextual Info: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1

b01619

Abstract: D6NM60N
Contextual Info: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N

f25nm60n

Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Contextual Info: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application

B20100G

Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
Contextual Info: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

STTH30

Contextual Info: STTH30L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ K A Reduces switching and conduction losses D2PAK STTH30L06G Description The STTH30L06, which is using ST Turbo 2 600 V

IRF9510S

Contextual Info: IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D D S • Halogen-free According to IEC 61249-2-21

IRF9530S

Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

IRFS11N50A

Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf
Contextual Info: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition

FT1614

Contextual Info: FT16.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 16 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-263AB D2PAK FEATURES • Glass/passivated die junctions • Medium current Triac • Low thermal resistance • Ideal for automated placement

TRIAC BTA 28

Abstract: TRIAC BTB08 triac BTA 32 600 TRIAC BTB08 specifications TRIAC BTB08 600 TRIAC BTa 24 TRIAC BTa 18 600 B bta 03 BTA 600 triac BTA 140
Contextual Info: BTA/BTB08 and T8 Series 8A TRIACS SNUBBERLESS , LOGIC LEVEL & STANDARD MAIN FEATURES: A2 A2 Symbol Value Unit IT RMS 8 A VDRM/VRRM IGT (Q1) 600 and 800 5 to 50 A2 G A1 A2 A1 A2 G V A1 G D2PAK (T8-G) DPAK (T8-B) mA A2 DESCRIPTION Available either in through-hole or surface-mount

STB40NF03L

Contextual Info: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

fr4 94v0

Abstract: 4r70 1R00 1R50 2R00 AL203 R500 R750 UL-94V0 S M R750
Contextual Info: Ro VE LEA HS RS D CO I O N F R E M SA E PL R IA E NT * Features • RoHS compliant* ■ D2PAK housing ■ Low inductance ■ Resistor electrically isolated from the Applications backplate ■ High power rating ■ Compatible with lead free solder reflow temperatures

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

Contextual Info: MURHB860CT Preferred Device MEGAHERTZ Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • •

Q2008F41

Contextual Info: ge a ck L. U. ED Z NI G 39 CO 716 E R #E d te ec l Se Pa s* E2 le Fi TO-92 *TO-220 TO-202 3-lead Compak TO-263 D2Pak TO-252 D-Pak TO-251 V-Pak *TO-3 Fastpak MT2 MT1 G Triacs 0.8 A to 35 A E2 General Description These gated triacs from Teccor Electronics are part of a broad

pwr263s

Abstract: PWR263S-20
Contextual Info: POWER RESISTORS Bourns Releases New Power Resistor Series Riverside, California - March 31, 2009 - Bourns Fixed Resistors Product Line introduces Model PWR263S-20. It is a compact low profile power resistor rated to 20 W continuous power in a surface mount D2PAK housing making it suitable for automated assembly methods. The

Contextual Info: FT25.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 25 Amp £ 50 mA D2PAK Off-State Voltage 200 V ÷ 800 V MT2 MT1 MT2 This series of TRIACs uses a high per for mance PNPN technology. G MT2 These parts are intended for general purpose AC switching applications

STPR1620CT

Abstract: diode k 0368 STPR16*0CT STPR1620 STPR1620CG STPR1620CG-TR STPR1620CR STRP1620CT
Contextual Info: STPR1620CG/CT/CR ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV A1 2x8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns K A2 K K A2 A1 D2PAK STPR1620CG FEATURES • ■ ■ ■ SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY

STB85NF55

Abstract: STP85NF55 40AVDD
Contextual Info: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STB45N10L

Contextual Info: STB45N10L N-CHANNEL 100V - 0.028 Ω - 45A I2PAK/D2PAK POWER MOS TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB45N10L 100 V < 0.036 Ω 45 A TYPICAL RDS(on) = 0.028 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STB45NF06

Contextual Info: STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 • ■ VDSS RDS on ID 60V <0.028Ω 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of