B2020 Search Results

B2020

Abstract: B2021 t523
Contextual Info: BIPOLAR INTEGRATED 1451454 □□□□tab T • BIT T'S~3~Z3-eÇ- 47E D Bipolar integrated Technology Inc. HIPPI Interface Chip Set 32-Bit B2020 - HIPPI Source Interface Chip B2021 - HIPPI Destination Interface Chip The B2020 and B2021 are BIT’S implementation of the single chip Parallel HIPPI Source and Destination Interfaces.

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B2020 Green Products Technical Data Data Sheet N1258, Rev. - SDUR/B2020 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode

b20200 diode

Abstract: 033 motorola B20200 418B-02 tj 305 motorola B20200 MOTOROLA MBRB20200CT
Contextual Info: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power

BRF20200CT

Abstract: Schottky com anode TO220
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

B20200

Abstract: b20200 diode
Contextual Info: B20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

82055

Abstract: TH 82420 82440
Contextual Info: \ * so •“TiSbod* *• P5KS <M-* - j a r S B « s -— \ \ PICO PART numkr ' \ 82003 S E R IE S 82000 T 0601'9*1 H “ - Tr 170 4 Mi I BOOttO B2» -G 3 ►- • -4 r70l« Ml l • 82075 300 Ct 12 Ct 3 82085 82090 300 ct 300 ct 300 ct 50 Ct 150 ct 125

B20200G

Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20200

Abstract: MBRB20200CT MBRB20200CTT4 SMD310
Contextual Info: B20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt

B20200G

Abstract: SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode
Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

ch340

Abstract: FEDERAL PACIFIC BREAKER Cutler-Hammer Cutler-Hammer bd1515 a1515 THQL1120 BAB1015 Cutler-Hammer GFCB250 Challenger breaker Challenger C120 Circuit Breaker Federal Pacific
Contextual Info: Replacement Circuit Breakers Replacement Circuit Breakers Replacement Circuit Breakers To Order, Call Connecticut Electric 2001 Rev. 8/01 Toll-Free 800/472-3819 Page Cutler-Hammer . . . . . . . . . . 2 Type CH CHB CC BR–C BD-C BAB BRD–A Federal Pacific Electric . . . . .8

B20200G

Abstract: B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4
Contextual Info: B20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

B20200G

Contextual Info: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

AXP 209

Abstract: UPD65031 UPD65070 UPD65006 intel 80487 SCX6206 HG62B40 UPD65022 mb86901 UPD71641
Contextual Info: _► ADVANCED Device to PGA Socket Cross Reference INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 ■Email advintcorp@aol.com ■Internet http://www.advintcorp.com Actel Device#

SDB2020

Contextual Info: B20200PR Schottky Barrier Rectifier DUAL COMMON ANODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability 1  Dual common anode rectifier 3 Pin 1, 3 : Cathode 123

a1232

Abstract: STR 6267
Contextual Info: ÆDDI^ Sales Offices, Distributors & Representatives M arch 1995 Altera North American Regional Offices NORTHERN CALIFORNIA Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: 408 894-7900 FAX: (408)428-0463 Altera Bay Area Sales 2290 North First Street, #212

b20200 diode

Abstract: B20200 SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state- of- the- art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.

B20200

Abstract: hex head screws Rectifier 6 amp 200 volt b20200 diode 10 amp rectifier, TO 220 all silicon metal rectifier diode product List RECTIFIER DIODES Motorola DATA BOOK single phase fully controlled rectifier 221D AN1040
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20200CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

b20200

Abstract: b20200 diode 221D AN1040 MBRF20200CT 2-2-1D
Contextual Info: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

DR B2003

Abstract: B1786 B1784/P
Contextual Info: SOLDERING STATION Instruction Manual Thank you for purchasing the HAKKO 936 Soldering Station. Please read this manual before operating the HAKKO 936. Store the manual in a safe, easily accessible place for future reference. Table of Contents Packing List/ Specifications ……………………1

B20200G

Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

B20200G

Abstract: B20200G AKA MBRB20200CTT4G B20200 MBRB20200CT MBRB20200CTG MBRB20200CTT4 SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: B20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

dmbr20200ctp

Abstract: b20200 MBR20200CTP MBR20200CTP-D B20200P
Contextual Info: MBR20200CTP SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.

b20200

Abstract: b20200 diode MBR20200CTG 1505C MBR20200CT
Contextual Info: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs M BRF20200CT M o to ro la P referre d D evice The SW ITCHM O DE Power R ectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -siilco n power diode. S ta te -o f-th e -a rt geom etry features