B20200 Search Results

b20200 diode

Abstract: 033 motorola B20200 418B-02 tj 305 motorola B20200 MOTOROLA MBRB20200CT
Contextual Info: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power

BRF20200CT

Abstract: Schottky com anode TO220
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

B20200

Abstract: b20200 diode
Contextual Info: B20200CT SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

B20200G

Abstract: B20200G AKA B20200 5M MARKING CODE SCHOTTKY DIODE 1505C 221D MBRF20200CT MBRF20200CTG
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20200

Abstract: MBRB20200CT MBRB20200CTT4 SMD310
Contextual Info: B20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power supplies and converters with up to 48 volt

B20200G

Abstract: SCHOTTKY BARRIER RECTIFIER aka B20200G AKA b20200 mbr20200ct-g MBR20200CTG b20200 diode
Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

B20200G

Abstract: B20200G AKA SCHOTTKY BARRIER RECTIFIER aka Diode marking WW1 B20200 marking code ww1 J1702 MBRB20200CT MBRB20200CTG MBRB20200CTT4
Contextual Info: B20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

B20200G

Contextual Info: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

SDB2020

Contextual Info: B20200PR Schottky Barrier Rectifier DUAL COMMON ANODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability 1  Dual common anode rectifier 3 Pin 1, 3 : Cathode 123

b20200

Abstract: 418B-02 20200c
Contextual Info: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state-of-the-art device is designed for use in high frequency switching power

b20200 diode

Abstract: B20200 SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state- of- the- art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.

B20200

Abstract: hex head screws Rectifier 6 amp 200 volt b20200 diode 10 amp rectifier, TO 220 all silicon metal rectifier diode product List RECTIFIER DIODES Motorola DATA BOOK single phase fully controlled rectifier 221D AN1040
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF20200CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

b20200

Abstract: b20200 diode 221D AN1040 MBRF20200CT 2-2-1D
Contextual Info: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

B20200G

Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

dmbr20200ctp

Abstract: b20200 MBR20200CTP MBR20200CTP-D B20200P
Contextual Info: MBR20200CTP SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt outputs.

b20200

Abstract: b20200 diode MBR20200CTG 1505C MBR20200CT
Contextual Info: MBR20200CT SWITCHMODE Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs M BRF20200CT M o to ro la P referre d D evice The SW ITCHM O DE Power R ectifier em ploys the Schottky Barrier principle in a large area m e ta l-to -siilco n power diode. S ta te -o f-th e -a rt geom etry features

Contextual Info: MOTOROLA Order this document by B20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Power B20200CT Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This sta te -o f-the -a rt device is designed for use in high frequency switching power

B20200

Abstract: rectifier diode 20 amp 800 volt MBRB20200CT MBRB20200CTT4 SMD310
Contextual Info: B20200CT Preferred Device SWITCHMODE Power Rectifier Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power supplies and converters with up to 48 volt

B20200

Abstract: b20200 diode
Contextual Info: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R20200CT Switchmode Power Dual Schottky Rectifier . . . using Schottky Barrier technology with a platinum barrier metal. This s ta te -o f-th e -a rt device is designed for use in high frequency switching power supplies

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S w itchm ode P o w er M B20200CT Dual Schottky Rectifier M otorola Preferred Device . . . using Schottky B arrier te ch n olo gy with a platinum b arrier metal, This s ta te -o f-th e -a rt device is designed for use in high frequency switching pi3wer

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

221D-03

Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide