418B Search Results

DG417B

Abstract: DG417BDJ DG418B DG418BDJ DG419B 418B
Contextual Info: DG417B/418B/419B Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high

TB20N20E

Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
Contextual Info: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01

Contextual Info: 418B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)145# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)25#

418B-04

Abstract: marking 5M
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418B–04 ISSUE G SCALE 1:1 DATE 07/09/2001 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C E V

418B

Abstract: 15-V DG417B DG417BDJ DG417BDY DG418B DG418BDJ DG419B DG419BDQ
Contextual Info: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—rDS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible

418B-04

Abstract: 418B 98AS AYWW marking code IC 98ASB42761B 418B-03 marking code AYWW On semiconductor date Code d2pak
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K DATE 03 SEP 2008 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04.

V02 MSOP-8

Abstract: 418B
Contextual Info: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—rDS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible

418B

Contextual Info: DG417B/418B/419B Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high

418B

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK CASE 418B–03 ISSUE D DATE 01/02/2000 SCALE 1:1 C E V –B– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A 1 2 S 3 –T– SEATING PLANE DIM A B C D E G

418B-01

Abstract: 418B-04 98ASB42761B
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418B-04 ISSUE H DATE 13 JAN 2003 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. C SCALE 1:1 E V W

Contextual Info: DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D "15-V Analog Signal Range On-Resistance—r DS on : 15 W Fast Switching Action—tON: 100 ns TTL and CMOS Compatible

b2545g

Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
Contextual Info: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 

TS20100CG

Abstract: ntsj20100ctg ntsj2010 ntsj20100 NTSB20100CT
Contextual Info: NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.50 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low

B4030 AKA

Abstract: B4030G 838 ir NRVBB4030 B4030
Contextual Info: MBRB4030G, NRVBB4030T4G Preferred Device SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features •       Guardring for Stress Protection Maximum Die Size

b10 45g

Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Contextual Info: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art

AN569

Abstract: MTB30P06V MTB30P06VT4
Contextual Info: MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MURHB860CT Preferred Device MEGAHERTZ Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • •

NTB6413AN

Contextual Info: NTB6413AN, NTP6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features • • • • Low RDS on High Current Capability 100% Avalanche Tested These are Pb−Free Devices http://onsemi.com V(BR)DSS MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)

AN569

Abstract: MTB60N05HD MTB60N05HDL MTB60N05HDT4 SMD310
Contextual Info: MTB60N05HDL Preferred Device Power MOSFET 60 Amps, 50 Volts, Logic Level N–Channel D2PAK The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

T23N03

Abstract: NTB23N03R NTB23N03RT4 Code N03
Contextual Info: NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • • http://onsemi.com 23 AMPERES, 25 VOLTS

AN569

Abstract: MTB9N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTB2N60E SMD310
Contextual Info: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTB3N100E SMD310 LS 1316
Contextual Info: MOTOROLA Order this document by MTB3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS on = 4.0 OHM N–Channel Enhancement–Mode Silicon Gate

M50P03HDL

Abstract: m50p03 AN569 MTB50P03HDL MTB50P03HDLT4
Contextual Info: MTB50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for