B2515 Search Results

B2515

Abstract: b2500 ultra FAST DMOS FET Switches B2520 B2520K4
Contextual Info: Bay Linear Inspire the Linear Power B2520/B2515 N-CHANNEL DMOS FET SWITCH VIDEO TRANSISTOR Series Description Features The B2520 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The

B2515L

Abstract: MBR2515L
Contextual Info: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR2515L . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

Contextual Info: R. •nés 2 .5 0 m m p itc h b o a r d to b o a r d c o n n e c to r A ssem bly Layout A 2 5 0 1 W V 2 -N P MATCH WITH B 2515W R 0-N P A 2 5 0 1 W V 2 -N P MATCH WITH B 25 1 5W V 0 —NP —6.Q— i H « LO !> A 2 5 0 1 W R 2 -N P MATCH WITH B 2 5 1 5 W V 0 -N P

MBR2515L

Abstract: MBR2515LG B2515L diode B2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

bm153

Contextual Info: AMORPHOUS CHOKE COILS Reference sample W D D : Maximum outer diameter W : Maximum width Total lead length (L)* : 30mm (+3mm, -3mm) Soldering boundary (a)* : 0mm (+4mm, -0mm) * The bottom of the core or coil ( )is defined as the base surface. a L ?MAJOR USES

STK 442 130

Abstract: STK 412 770 stk 432 070 STK 795 820 stk 412 -770 STK 442 070 stk 432 050 ic stk 432 050 stk 795 821 STK 442 - 130
Contextual Info: Lamination Size E Cores Section 11 . Figure 1 Figure A Figure 2 PHYSICAL DIMENSIONS PART NO. TYPE FIG *-41203-EC E2829 1A *-41707-EC E3233 2A *-41808-EC El187 1A *-42510-EC E2425 1A *-43009-EC E2627 1A *-43515-EC El375 2A *-44317-EC El21 2A *-44721-EC El625

b2515l

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

86A83

Contextual Info: 1111 1234565471839A1B8CDEF211 3456789ABC1DEF11F1 4C1813456789ABC11 1 3 1!"#"$1  541 59D1 9DE1 6ECAC983E1 83F1 E7E689B6E1 55E44AAE391 541

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

AC toroidal choke

Abstract: TM10160 EI40 transformer TM-10160 Chemi-Con DATE Coding LBTM020100N6-V0E FM2010 NANOCRYSTALLINE nippon chemi-con date code TM1060
Contextual Info: AMORPHOUS/DUST CHOKE COILS AMORPHOUS / DUST CHOKE COILS CAT. No. E1008K ?List of products Series Major uses Miniatur- Thin ization type Low loss Low cost Large capacity Classification Standard Specifications & Coil Series Guide CM Switching mode power supplies

TM-10160

Abstract: JLH 94 V0 TM10160 LBTM005750N5-V0E FM2010 F322015MK 1D2 SMD Ei40 10T LNC181210G LNC251515G
Contextual Info: アモルファス/ダスト チョークコイル CAT.No.1008O 目 次 製品検索 製品一覧表 製品体系図 一般規格（標準トロイダルコイル） 使用上の注意 製品ガイド アクセサリー 信頼性試験条件 カスタム仕様設計条件

B2515

Abstract: B2515L MBR2515L MBR2515LG 100-C1210
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

Contextual Info: B2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

LBBM005351X8

Abstract: BM301
Contextual Info: AMORPHOUS CHOKE COILS RoHS Compliant ?MAJOR USES @Output choke coils for Switching Mode Power Supply @Choke coils for DC-DC converter @Normal mode choke coils for noise control ?FEATURES @Miniaturization in comparison with TM series coils @High inductance in low load current

TM-10160

Abstract: TM10160 TM1060 xd405 CM06151G6 LBTM005100NS-V00 CM60130GK LBTM010500N7-V0 CM35500GK LPT211205N
Contextual Info: AMORPHOUS CHOKE COILS CAT. No. E1008E ?List of products Series Major uses Miniatur- Thin ization Type Low loss Low cost Large capacity Classification Standard Specifications & Coil Series Guide CM Switching mode power supplies DC-DC converter Normal mode line filter

B2515L

Abstract: Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

ka 494

Abstract: LBBM020100X6-V0E LBBM0403R4X7-V0E LBBM010121XR-V0E LBBM003551X7-V0E TM05750N5DGPBF B190910N LBTM005131NPAY0E LPB150905N LPB190910N
Contextual Info: RoHS指令 適合品 •主な用途 ● スイッチング電源出力平滑用チョークコイル ● DC-DC コンバータ用チョークコイル ● ノイズ対策用ノーマルモードチョークコイル ■特長 ● TM シリーズに比べて小形化しています。

LBBM020310XR

Abstract: B150905N B190910N B221310N B251510N LPB150905N LPB190910N LPB221310N LPB251510N LPB251515N
Contextual Info: AMORPHOUS CHOKE COILS RoHS Compliant ?MAJOR USES @Output choke coils for Switching Mode Power Supply @Choke coils for DC-DC converter @Normal mode choke coils for noise control ?FEATURES @Miniaturization in comparison with TM series coils @High inductance in low load current

B2515L

Abstract: dmbr2515l diode B2515L
Contextual Info: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

B2515L

Abstract: diode B2515L
Contextual Info: B2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art

B322015N

Abstract: BM20150X7 BM03801X8 BM05161X6
Contextual Info: AMORPHOUS CHOKE COIL New! Reference sample W D D : Maximum outer diameter W : Maximum width Total lead length (L)* : 30mm (+3mm, -3mm) Soldering boundary (a)* : 0mm (+4mm, -0mm) * The bottom of the core or coil ( )is defined as the base surface. a L The specification value of the soldering boundary a varies

b2515

Abstract: 2515L diode B2515L
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCHMODE P o w e r R e c tifie rs M B R 2515L . . em ploying the Schottky Barrier principle in a large m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide

delta rectifier heat dissipation

Abstract: B2515L MBRB2515L SMD310 make delta rectifier B25-15 B2515
Contextual Info: MOTOROLA Order this document by B2515L/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE Power Designer's B2515L Rectifier OR'ing Function Diode Motorola Preferred Device D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by M BR2515L/D MBR2515L Advance Information SWITCHMODE Pow er R ectifiers . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide