B2060 Search Results

micrel sy55852

Abstract: SY55852
Contextual Info: RELIABILITY REPORT DATE: 6/3/04 QUALITY ENG : DANA TRINH PURPOSE: Qualify HL BASE ARRAY QUAL VEHICLES PACKAGE TYPE : ASSEMBLY LOCATION D/C # LOT # FAB # ARRAY PROCESS SY55851 10L MSOP UNISEM 243B B206003M09 MICREL HL ASSET 1 SY55854 10L MSOP EPAD UNISEM 04SE

B2060T

Abstract: MBRB2060CT MBRB2060CTT4 SMD310
Contextual Info: B2060CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications

Contextual Info: B2060CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Package Designed for Power Surface Mount Applications

c5706

Abstract: c5706 equivalent c5803 c5706 equivalent transistor Transistor C5706 c2314 C5802 transistor c5802 T2al250V round fuse c5706 transistor
Contextual Info: AM/FM SIGNAL GENERATORS 2023A, 2023B, 2025 Operating Manual Document part no. 46892/373 AM/FM SIGNAL GENERATOR 2023A 2023B 9 kHz−1.2 GHz 9 kHz−2.05 GHz 2025 9 kHz−2.51 GHz Includes information on: Option 1: Option 2: Option 3: Option 4: Option 5: Option 7:

B2060

Abstract: B2060g b2060 aka MBRB2060CT MBRB2060CTG MBRB2060CTT4 MBRB2060CTT4G
Contextual Info: B2060CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • •

B2060

Abstract: F2060C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifiers M B R F2060C T Motorola Preferred Device The SW ITCHM O DE Power R ectifier employs the Schottky Barrier principle In a large area m e ta l-to -silico n power diode. S ta te -o f-th e -a rt geom etry features

B2060g

Abstract: *B2060G
Contextual Info: B2060CT Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • • • http://onsemi.com

b2060

Abstract: 221D-03
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

TRIAC BTA 28

Abstract: triac BTA 80 TRIAC BTA 400 TRIAC BTA series BTA 600 triac TRIAC BTa 12 600 bta 600b TRIAC BTA 16 600b TRIAC BTA 70 BTA 600 12 triac
Contextual Info: SCR & TRIAC TRIAC D2PAK DPAK SOT 223 SURFACE MOUNT TRIACs Tj max = 125 °C except T405-xxxB: 110 °C IT(RMS) Ta (1) Tl (2) Tc (3) Ttab(4) VRRM VDRM ITSM IDRM @ VDRM Type (A) (°C) (V) IGT I + II +- IH III - IL IV -+ VTM @ ITM (di/dt)c dv/dt @ @ 67% (dv/dt)c VDRM

B2060

Abstract: MBRB2060CT MBRB2060CTT4
Contextual Info: B2060CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • Package Designed for Power Surface Mount Applications

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

b20100

Abstract: AKA B20100 B20100 AKA B2090 2060CT
Contextual Info: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

BRF2060CT

Abstract: B2060 F2060CT motorola b2060 f2060ct diode
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M B R F2060CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

B2060g

Abstract: B2060 b2060 aka MBR2060CT MBRB2060CT MBRB2060CTG MBRB2060CTT4 *B2060G
Contextual Info: B2060CT, MBR2060CT SWITCHMODEt Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • •

B2060G

Abstract: *B2060G NRVBB2060CTT4G B2060 PPAP MANUAL for automotive industry 418B-04 b2060 aka MBR2060CTG
Contextual Info: B2060CTG, MBR2060CTG, B2060CTT4G SWITCHMODE Power Rectifiers TO−220/D2PAK Surface Mount Power Package These state−of−the−art devices employ the use of the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com SCHOTTKY BARRIER

AKA B20100

Abstract: B20100 AKA B20100 b2060 aka mbr20100ct B20100 diode mbr2060ct B2080 B2090
Contextual Info: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:

B2060g

Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G
Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

TRIAC BTA 28

Abstract: BTA 600 triac BTA40-700B bta 600b T405-600D TRIAC BTA series Triac T410-700T TRIAC BTA 16 600b BTA 600 12 triac TRIAC BTA 16 -600
Contextual Info: THYRISTORS TRIAC D2PAK DPAK SOT 223 SURFACE MOUNT TRIACs Tj max = 110 °C except T410-xxxB/T/W/D: 125 °C IT(RMS) Tl Tc (2) (3) VRRM VDRM I TSM IGT I + Type (A) (°C) (V) (A) II +- IH III - IL VTM @ ITM IV -+ (di/dt)c @ Tj max dv/dt @ Tj max Package max

AKA B20100

Abstract: B2060 b20100 B20100 AKA B2090 b2080 MBR20100CT MBR2060CT MBR2080CT MBR2090CT
Contextual Info: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

b2060

Abstract: schottky DIODE MOTOROLA B20100 b20100 schottky rectifier motorola mbr motorola b2060 b2060 Motorola b2080 b2070 B2090 MBR2080CT
Contextual Info: MOTOROLA Order this document by MBR2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:

B2060G

Contextual Info: MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

dm024

Abstract: A992 transistor and its equivalent LB 11917
Contextual Info: LOGIC LEA300K Embedded Array 5 Volt ASIC Products Databook O c to b e r 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

motorola b2060

Abstract: b2060 Motorola BRF206 brf2060
Contextual Info: MOTOROLA Order this document by MBRF2060CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S cho ttky Pow er R ectifier MBRF2060CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features

Marconi 2024 service manual

Abstract: 46880-068C Marconi 2030 service manual c2314 C3679 equivalent c3688 equivalent des circuit integre ttl C2373 Marconi 2030 marconi 2030 operating manual
Contextual Info: AM/FM SIGNAL GENERATORS 2023 and 2024 Operating Manual Document part no. 46892/225 Issue 9 18 May 1998 AM/FM SIGNAL GENERATOR 2023 & 9 kHz - 1.2 GHz 2024 9 kHz - 2.4 GHz Includes information on: Option 1: Option 2: Option 3: Option 4: Option 5: Option 7: Option 10: