MARKING UM DIODE Search Results

Contextual Info: Schottky Barrier Diode Diode Module m tm OUTLINE D180SC4M 40 V 180A Feature • High lo Rating -Module-PKG • Low V f • Small 9 je • f i Vf • 8 jc jÿ 'J '£ U Main Use • X M Z 'fy f-y iM M • • • • • DC/DC z i y j { - 3 •IC x T .? High Power Switching Regulator

OZ 9936

Abstract: st smd diode marking code "LE" DIODE smd marking Ak I2102 AB marking code smd diode marking code EA SMD smd D207 smd diode marking JC Diode 1600V To 220 smd code diode 20a
Contextual Info: Bulletin I2102 rev. C 05/00 SAFEIR Series 20ETS.S INPUT RECTIFIER DIODE VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

8EWS08S

Abstract: 8EWS10S 8EWS12S AN-994 8EWS10
Contextual Info: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

ERA38

Abstract: irsy
Contextual Info: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion

1n6628 jantx

Abstract: JEC 400 1N6626 1N6627 1N6628 1N6629 1N6630 1N6631 t375 1N6630 JANTX
Contextual Info: 1N6626 th ru 1N6631 MicrosemiCorp. f T hp diode e xp erts SANTA ANA, CA SCOTTSDALE, A Z For m ore inform ation cali: ULTRA FAST RECTIFIERS 602 941-6300 .040 +/- .002 DIA. (1.02) Features 1.0 MIN. (25.4). • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS

Contextual Info: . RIGHTS RESERVED REV ISIO NS v LTR DESCRIPTION DATE LOGO CHANGE DWN 10MAÏ20I3 TY APVD KZ MATER IALS: -HOUSING: HIGH TEMPERATURE NYLON, BLACK, UL 9 4 V - 0 POST-SHIELD: 0.20mm THICK, BRASS PREPLATED WITH I . 2 7 jj m M I N S E M I - B R I G H T N I C K E L ;

Contextual Info: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max

IRG4PC50UDPBF

Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Contextual Info: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: 2SJ363 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power switching Features • Low on-resistance • Low drive current • 4 V gate drive device can be driven from 5 V source Outline UPAK OD 1. Gate 2. Drain 3. Source 4. Drain

44007

Abstract: 233k LT1004CS8 LT1004 thermocouple type r LT1004CS8-1.2 0412 LT1004-2 LT1004C
Contextual Info: LT1004CS8-1.2/ LT1004CS8-2.5 Micropower Voltage References F€OTUR€S DCSCRIPTIOn • Guaranteed ±4mV initial accuracy LT1004-1.2 ■ Guaranteed ± 20mV accuracy LT1004-2.5 ■ Guaranteed 10/uA operating current ■ Guaranteed temperature performance ■ Operates up to 20mA

Contextual Info: MOTOROLA Order this document by MMVL3401T1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Pin D iode M M VL3401T1 This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount

Contextual Info: ISIEfi 0E3SbGS GG4bbDD T1S bGE D SIEMENS AKTIENGESELLSCHAF SIEMENS LD274 w t L D 2 7 5 GaAs INFRARED EMITTER Package Dimensions in Inches (mm Chip Position 02 4 (0 6} 031 (I .016(0 4} 016(0.4) r~ ♦ J Z 071 (1 8 )_ 04 7 (1 2 ) L T 2 1 7 (5 5) 200 ( 5 1 )

smd diode marking 325

Abstract: 100-C AN-994 IRF614S SMD-220
Contextual Info: PD-9.1003 International H»] Rectifier IRF614S HEXFET P ow er M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS =

2SK2551

Abstract: SC-65 72m transistor
Contextual Info: TO SHIBA 2SK2551 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2551 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: I IIM 5KP5.0 S - 5KP180CA(S) SERIES V IIE U TRANSIENT VOLTAGE SUPPRESSOR INCORPORATED Features_ UL Recognized • • • • • • • 5000 W atts Peak Pulse Pow er Dissipation Standoff Voltage Range 5.0 - 180 Volts Constructed w ith Glass Passivated Die

IRC540 equivalent

Abstract: IRC540 IRC540 SIMILAR IRC540 package drawing
Contextual Info: PD-9.592A International S Rectifier IRC540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 1 00 V

10BQ040

Abstract: IRF7811AV 16VZ
Contextual Info: PD-94009 IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power

IRFP460N

Abstract: AN1001 313X0
Contextual Info: PD-94098 IRFP460N SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l VDSS Rds(on) max ID 500V 0.24Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74VHC1G 32/D Product Preview M C74VHC1G32 2 -In p u t OR G ate The MC74VHC1G32 is an advanced high speed CMOS 2 -in p u t OR gate fabricated with silicon gate CMOS technology. It achieves high

IRF7473

Contextual Info: PD- 94037A IRF7473 HEXFET Power MOSFET Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved

94055A

Abstract: 48V SMPS AN1001 IRF7478
Contextual Info: PD- 94055A IRF7478 SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

irf7468

Contextual Info: PD - 93914F IRF7468 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Benefits l l l Ω RDS on) max(mΩ)

Contextual Info: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857