1SS395 Search Results

Contextual Info: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)

1SS395

Contextual Info: TOSHIBA 1SS395 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23V (Typ.) @Ijr = 5mA 1.25 ± 0.1 3 oo + I - -EB 2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

Contextual Info: Product specification 1SS395 Features Low forward voltage:VF 2 = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 15 V R everse voltage VR 10 V M axim um (peak) forward current

1SS395

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS395 TO SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS39 5 Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23 V (Typ.) @Ijn = 5mA 1.25 + 0.1 oo + ' 2 - -ES 2 od + i MAXIMUM RATINGS (Ta = 25°C)

1SS395

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

smd marking S9

Abstract: maximum current rating of diodes SMD MARKING smd marking 35 1SS395
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS395 Features Low forward voltage:VF 2 = 0.23 V(Typ) @ IF = 5mA Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 15 V R everse voltage VR 10 V

1SS395

Contextual Info: 1SS395 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS395 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA

1SS395

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS395

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm Small package Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS395

Contextual Info: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 = 0*23V (Typ.) @Ijr = 5mA 1.25 ± 0.1 3 oo + I - 2 -E ft oö M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit in mm Small package Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S