1SS383 Search Results

Contextual Info: Product specification 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage

BAT54M3T5G

Abstract: 419C-02 MMVL3700T1
Contextual Info: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40

Contextual Info: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)

SC-82

Abstract: 1SS383T1G 1SS383T2G marking 900AA 900aa
Contextual Info: 1SS383T1G, 1SS383T2G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4−lead SC−82 package. Features • Low Forward Voltage: VF = 0.48 V typ @ IF = 100 mA • Low Reverse Current: IR = 5 mA (max) • Pb−Free Package May be Available. The G−Suffix Denotes a

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

1SS383

Contextual Info: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)

"MARKING DIAGRAM"

Abstract: 1SS383T1
Contextual Info: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW

Contextual Info: TOSHIBA 1SS383 TOSHIBA DIODE 1 SS383 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 3 = 0.54V (TYP.) Low Reverse Current ; I r = 5^A(MAX,)

1SS383

Contextual Info: TOSHIBA 1SS383 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vjr 3 = 0.54V (TYP.) Low Reverse Current : Ir = 5,mA (MAX.)

1SS383

Contextual Info: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 3 = 0.54V (typ.) l Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)

diode code ae

Abstract: brd8011 1SS383T1G
Contextual Info: 1SS383T1G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4−lead SC−82 package. Features • Low Forward Voltage: VF = 0.48 V typ @ IF = 100 mA • Low Reverse Current: IR = 5 mA (max) • This is a Pb−Free Device*

Contextual Info: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)

1SS383

Contextual Info: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)

smd A4

Abstract: MARKING A4 f1 smd marking smd sot343 SM21 1SS383 smd marking a4 smd marking SOT343
Contextual Info: Diodes SMD Type Low Voltage High Speed Switching 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage

SC82

Contextual Info: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW

Contextual Info: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)

1SS383

Contextual Info: 1SS383 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS383 ○ 低電圧高速スイッチング用 単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており 超高密度実装に最適です。

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g