1SS372 Search Results

Contextual Info: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM

schottky marking code PD

Contextual Info: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15

diode marking N9

Abstract: SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K
Contextual Info: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 FEATURES z Small surface mounting type. z Small package. z Low forward voltage:VF=0.23V typ . Pb Lead-free APPLICATIONS z For general purpose applications. SOT-323 ORDERING INFORMATION

Contextual Info: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM

Contextual Info: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 . Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i 3 - MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS372

Contextual Info: TOSHIBA 1SS372 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS372 Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA ,1 .2 5 ± 0 .1 oo + I 3E- •a 2 MAXIMUM RATINGS (Ta = 25°C)

MARKING N9

Abstract: diode marking N9
Contextual Info: 1SS372 Schottky Barrier Diodes SOT-323 Features — Small surface mounting type. — Small package. — Low forward voltage:VF=0.23V typ . Applications — For general purpose applications. Dimensions in inches and (millimeters) Ordering Information Type No. Marking

Contextual Info: TOSHIBA 1SS372 TO SHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1 HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TY P . @Ijr = 5 m A M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT VRM 15 V Reverse Voltage

1SS372

Contextual Info: Diodes SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V typ. @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage

SS372

Contextual Info: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i MAXIMUM RATINGS (Ta = 25°C)

1SS372

Contextual Info: 1SS372 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS372 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA

PBD 3511

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW

Contextual Info: 1SS372 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

1SS372

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING DIODE 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current

1SS372

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

1SS372

Contextual Info: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS372 SCHOTTKY BARRIER DIODE SOT-323 FEATURES  Small Package  Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: N9 MAXIMUM RATINGS Ta=25℃ unless otherwise noted

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS372 Features • • • • • Halogen free available upon request by adding suffix "-HF" High reliability

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード