MMBD330 Search Results

marking 28 SOT323 uhf

Abstract: t 04 80
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface

sod diode marking IR10

Abstract: MMBD330WS
Contextual Info: DATA SHEET MMBD330WS SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER SOD-323 200 mWatts Unit: inch mm FEATURES • Low Capacitance: 1.5 pF (Max) at VR=15V .014(.35) • Extremely Fast Switching Speed .009(.25) .054(1.35) • Very Low VF: 0.36V (Typ) at IF = 1mA

MMBD330W

Contextual Info: MMBD330W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE POWER 30 Volts SOT-323 200mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives .087(2.2) .078(2.0) • Very Low VF: 0.36V (Typ) at IF = 1mA

MMBD110T1

Abstract: MMBD330T1 MMBD770T1 diode schottky 4T
Contextual Info: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

diode schottky 4T

Abstract: MMBD330T1 MMBD770T1 SMD310
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface

Contextual Info: MMBD330W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE POWER 30 Volts 200mWatts SOT-323 Unit: inch mm • Low Capacitance: 1.5 pF (Max) at VR=15V • Very Low VF: 0.36V (Typ) at I F = 1mA 0.087(2.20) 0.070(1.80) • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.

Contextual Info: MMBD330W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE POWER 30 Volts 200mWatts SOT-323 Unit: inch mm 0.087(2.20) 0.070(1.80) • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free)

diode schottky 4T

Contextual Info: MMBD330/MMBD770 Schottky Barrier Diodes SOT-323 Features — Extremely low minority carrier lifetime. — Very low capacitance. — Low reverse leakage. Applications — For high-efficiency UHF and VHF detector application. Dimensions in inches and millimeters

MMBD330WS

Contextual Info: MMBD330WS SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE POWER 30 Volts SOD-323 200mWatts Unit: inch mm FEATURES .014(.35) .009(.25) .054(1.35) .045(1.15) .078(1.95) .068(1.75) • Low Capacitance: 1.5 pF (Max) at VR=15V • Very Low VF: 0.36V (Typ) at IF = 1mA

MMBD330T1

Abstract: MMBD330T1G MMBD770T1 MMBD770T1G
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface

SMMBD330T1G

Abstract: Schottky Diode Marking sc-70
Contextual Info: MMBD330T1G, MMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the

Contextual Info: MMBD330WS SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE POWER 30 Volts SOD-323 200mWatts Unit: inch mm FEATURES 0.078(1.95) 0.068(1.75) • Low Capacitance: 1.5 pF (Max) at VR=15V • Very Low VF: 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed

Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface

PBD 3511

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW

MMBD330W

Contextual Info: DATA SHEET MMBD330W SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 30 Volts POWER SOT-323 200 mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Extremely Fast Switching Speed .087(2.2) .078(2.0) • Very Low VF: 0.36V (Typ) at IF = 1mA .004(.10)MIN. • Low Capacitance: 1.5 pF (Max) at VR=15V

MMBD330T1

Abstract: MMBD330T1G MMBD770T1 MMBD770T1G SC-70 G.2
Contextual Info: MMBD330T1G, MMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT- 323/SC- 70 package which is designed for low- power surface

Contextual Info: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

Contextual Info: MMBD330 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: MMBD330T1G, MMBD330T1G, MMBD770T1G, SMMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11