MMBD770 Search Results

MMBD770W

Contextual Info: DATA SHEET SOT-323 Unit: inch mm 70 Volts VOLTAGE 0.004(0.10)MIN. SURFACE MOUNT SCHOTTKY DIODES 250mA CURRENT 0.087(2.20) 0.070(1.80) FEATURES • Extremely low minority carrier lifetime 0.087(2.20) 0.078(2.00) MMBD770W • Low capacitance ( 0.4pF @ 20V typical )

Contextual Info: DATA SHEET MMBD770WS SURFACE MOUNT SCHOTTKY DIODES SOD-323 Unit: inch mm 70 Volts VOLTAGE MECHANICAL DATA Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0048 gram Marking : 770 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

marking 28 SOT323 uhf

Abstract: t 04 80
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface

MMBD770W

Contextual Info: DATA SHEET MMBD770W SOT-323 Unit: inch mm SURFACE MOUNT SCHOTTKY DIODES 200mA .087(2.2) .070(1.8) FEATURES .054(1.35) .045(1.15) • Extremely low minority carrier lifetime .087(2.2) .078(2.0) POWER .004(.10)MIN. 70 Volts VOLTAGE • Low capacitance ( 0.4pF @ 20V typical )

MMBD110T1

Abstract: MMBD330T1 MMBD770T1 diode schottky 4T
Contextual Info: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

diode schottky 4T

Abstract: MMBD330T1 MMBD770T1 SMD310
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface

Contextual Info: DATA SHEET MMBD770WS SOD-323 SURFACE MOUNT SCHOTTKY DIODES 200mA POWER 70 Volts VOLTAGE Unit: inch mm .014(.35) .054(1.35) .045(1.15) • Extremely low minority carrier lifetime .009(.25) .078(1.95) .068(1.75) FEATURES • Low capacitance ( 0.4pF @ 20V typical )

MMBD770WS

Contextual Info: MMBD770WS SURFACE MOUNT SCHOTTKY DIODE Voltage Range 70 Volts Power 200mWatts UPM SOD-323 Features .009 .25 .014(.35) .054(1.35) * Extremely low minority carrier lifetime * Low capacitance ( 0.4pF @ 20V typical ) * Low reverse leakage ( 30nA @ 35V typical )

diode schottky 4T

Contextual Info: MMBD330/MMBD770 Schottky Barrier Diodes SOT-323 Features — Extremely low minority carrier lifetime. — Very low capacitance. — Low reverse leakage. Applications — For high-efficiency UHF and VHF detector application. Dimensions in inches and millimeters

Contextual Info: MMBD770 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

MMBD330T1

Abstract: MMBD330T1G MMBD770T1 MMBD770T1G
Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT−323/SC−70 package which is designed for low−power surface

SMMBD330T1G

Abstract: Schottky Diode Marking sc-70
Contextual Info: MMBD330T1G, SMMBD330T1G, MMBD770T1G, MMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the

Contextual Info: DATA SHEET MMBD770WS SURFACE MOUNT SCHOTTKY DIODES 70 Volts VOLTAGE CURRENT SOD-323 Unit: inch mm 250mA 0.078(1.95) 0.068(1.75) FEATURES • Extremely low minority carrier lifetime 0.014(0.35) 0.009(0.25) 0.054(1.35) 0.045(1.15) • Low capacitance ( 0.4pF @ 20V typical )

Contextual Info: MMBD330T1, MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface

MMBD770WS

Contextual Info: DATA SHEET MMBD770WS SOD-323 SURFACE MOUNT SCHOTTKY DIODES 200mA POWER 70 Volts VOLTAGE Unit: inch mm .014(.35) .054(1.35) .045(1.15) • Extremely low minority carrier lifetime .009(.25) .078(1.95) .068(1.75) FEATURES • Low capacitance ( 0.4pF @ 20V typical )

MMBD330T1

Abstract: MMBD330T1G MMBD770T1 MMBD770T1G SC-70 G.2
Contextual Info: MMBD330T1G, MMBD770T1G Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT- 323/SC- 70 package which is designed for low- power surface

Contextual Info: DATA SHEET SOT-323 Unit: inch mm 70 Volts VOLTAGE 0.004(0.10)MIN. SURFACE MOUNT SCHOTTKY DIODES 250mA CURRENT 0.087(2.20) 0.070(1.80) FEATURES • Extremely low minority carrier lifetime 0.087(2.20) 0.078(2.00) MMBD770W • Low capacitance ( 0.4pF @ 20V typical )

Contextual Info: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

Contextual Info: MMBD330T1G, SMMBD330T1G, MMBD770T1G, MMBD770T1G Schottky Barrier Diodes http://onsemi.com Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MMDL770T1G

Abstract: MMBD770T1 marking code 5H diode
Contextual Info: MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features •     http://onsemi.com

Contextual Info: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9