MARKING J3 Search Results

marking J3 sot23

Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
Contextual Info: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

J335

Abstract: marking MI C314
Contextual Info: ^External Dimensions unit: mm Fig. 2 Fig. 1 Fig. 3 Fig. 4 fO .5 7'°< I Cathode marking n ~ t w i to o 1.35*0A j 2.0mm j + Cathode marking Cathode marking c i 1.35 »°4 5.1*2? Fig. 5 Fig. 7 Fig. 6 Cathode marking J / mi o—x - j - r t — O o— W -J-W — O

B824 transistor

Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

transistor a564

Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

106 16k

Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Contextual Info: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

70.4 L marking

Contextual Info: Package Outlines Section 3 Contents Tape and R ee Part

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

marking codes fairchild

Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Contextual Info: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4

rb40 RECTIFIER

Abstract: 1Z 116 ctb-34 CTUG3D EU02A AS01 AS01A AS01Z AU01 AU01A
Contextual Info: SANKEN ELECTRIC CO LT» •n \ : i 3SE » m 7=^0741 0DDÜÔ03 7 ^ S A K J 7-_o3-d Fast Recovery Diodes hVrm:200~ 20Q0V nio: 0.2~ 0.8A AU/AS/RC/RU/EP/EU/EH/RF ,6o57±002 $0.78i005 Cathode Marking Cathode Marking srip / Outline Drawing < / * + 04,O±o^ $2.4±0

j3y transistor

Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
Contextual Info: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 SOT-23

Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode

S9013 J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)

marking j3a

Contextual Info: SDS20WA Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J3A □ SDS20WA 3 1 2 1,2. Cathode

A5431

Contextual Info: MARKING P H s . DF nj CUV E *! cñ. A MARKING 26 PCS-XE26SLFYUG1 1, 13; 14, 2 6 50 PCS-XE5GSLFYUG1 1, 2 5 ; 2 6 , 5 0 68 PCS-XE68SLFYUG1 1, 34; 3 5 , 6 8 NDTE 1, CDNTACT P L A T I N G GDLDCO, 76 H n DN MA TIN G AREA, T I N / L E A D DN T E R M I N A T I O N AREA,

j3y transistor

Abstract: .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

j3y transistor

Abstract: SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=1.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

SOT-23 J3Y

Abstract: j3y transistor transistor j3y
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

max6032

Abstract: BCW65B BCW65C BCW65A
Contextual Info: BCW65A, BCW65B BCW65C GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW65A = EA BCW65B = EB BCW65C = EC PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1 . 02 _ 0.89