AS01 Search Results

SPDT FETs

Abstract: as018m2-01
Contextual Info: GaAs FET MMIC SPDT Switch Non-Reflective DC-18 GHz AS018M2-00, AS018M2-01, AS018M2-10 Features • Broad Bandwidth, DC-18 GHz ■ Low Loss, < 3.0 dB ■ High Isolation, > 48 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 3 ns ■ Low Power Consumption, < 200 ¡¿Aat -5V

Contextual Info: GaAs 1C SPDT Switch Low Loss Reflective DC-10 GHz EHAlpha AS018R2-01, AS018R2-10 Features -01 • Broadband D C -1 0 GHz 0.220 5.59 mm ■ 0 .2 1 0 (5 .3 3 mm) ■*— 0.130 (3.30 mm) TYP. ■ Reflective, Short 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

Contextual Info: GaAs 1C SPDT Switch Reflective DC-18 GHz EBAlpha AS018R2-65 Features • Broadband D C -1 8 GHz 0.388 9.86 mm 0.0 7 0 (1 .7 8 mm) 0.115 (2.92 m m )- ■ Reflective, Short ± 0.002 KOVAR 0.164 (4.16 mm) j ■ 5 Lead Hermetic Package 0.328 (8.33 mm) ■ Capable of Meeting MIL-STD

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–10 GHz AS018M2-01, AS018M2-10 Features -01 • Broadband DC–10 GHz 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

1N4004

Abstract: 1N4004 146 1N4004 MCC 630 106
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N4004-AS01 Features • • • 1 Amp Rectifier Low Current Leakage Metalurgically Bonded Construction Low Cost

70 es 14 s

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AS01Z AS01 AS01A ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F Tstg Tj （℃） （℃） IFSM （A） VF

Contextual Info: GaAs 1C SPDT Switch Reflective DC-18 GHz ESAlpha AS018R2-65 Features •65 ■ Broadband D C -18 GHz 0 .3 8 8 9 .8 6 m m 0 0 .0 7 0 (1 .7 8 m m 0 .1 1 5 (2 .9 2 m m ) ■ Reflective, Short ± 0.002 ■ 5 Lead Hermetic Package in IS^$ KOVAR 0 .1 6 4 (4 .1 6 m m ) {

Contextual Info: GaAs 1C SPDT Switch Low Loss Reflective DC-10 GHz ESAlpha AS018R2-01, AS018R2-10 -01 F eat ur e s • Broadband DC-10 GHz 0.220 5.59 mm 0.210 (5.33 mm) ■0.130 (3.30 mm) TYP. ■ Reflective, Short 0.063 (1.60 mm) TYP. 0.130 (3.30 mm) TYP. ■ 7 Lead Hermetic Package

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–10 GHz AS018M2-01, AS018M2-10 Features -01 • Broadband DC–10 GHz 0.220 5.59 mm 0.210 (5.33 mm) ■ High Isolation, Non-Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

AS018M2-00

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–18 GHz AS018M2-00 0.648 • Broadband, DC–18 GHz ■ High Isolation, Low Loss, Fast Switching 2.240 Chip Outline 1.444 Features 1.520 ■ 100% On-Wafer RF and DC Testing 1.375 ■ 100% Visual Inspection to MIL-STD-883

aS01Z

Abstract: CTB-34
Contextual Info: SANKEN ELECTRIC U S A 11E D | ? T ì 0 7 m DDODG?^ â | High Speed Rectifier Diodes BVrm: 200—650V •loiO.SA T - AU/AS/AH^/AP X ' O AU01Z 250 200 AU01 450 400 AU01A 650 600 AU02Z 250 200 AU02 450 400 AU02A 650 600 AS01Z 250 200 AS01 450 400 AS01A AH01Z

Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-18 GHz EBAlpha AS018M2-65 Features • Broadband D C -1 8 GHz 0.388 9.86 mm 0.070(1.78 mm) 0.115(2.92 m m )' ± 0.002 ■ High Isolation, Non-Reflective ^ KOVAR 0.164 (4.16 mm) j ■ 5 Lead Hermetic Package ■ Capable of Meeting MIL-STD

Contextual Info: GaAs IC SPST Switch Reflective DC-18 GHz ESAlpha AS018R1-00 Chip Q j t l i n e F eat ur e s • Broadband DC-18 GHz ■ Low Loss, High Isolation, Reflective, Short ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883 MT 2010 D e s c rip ti o n

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC-18 GHz ESAlpha AS018M2-00 Chip Q j t l i n e F eat ur e s • Broadband, DC-18 GHz ■ High Isolation, Low Loss, Fast Switching ■ 100% On-Wafer RF and DC Testing 1.520 ■ 100% Visual Inspection to MIL-STD-883 MT 2010

S29AS016J70TFI010

Abstract: S29AS016J70 AS-016 vbk048 S29AS016J70BFI010E S29AS016J70BFI AS016J TS048 S29AS016J70TFI
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA July 29, 2010 Obsolescence Notification No: Subject: 2804 Obsolescence of the AS016J Packaged Products with the Model Numbers 01 or 02 Spansion LLC is announcing the obsolescence of the 110nm, 1.8V Floating Gate NOR AS016J

AS01

Abstract: AS01A AS01Z ES01 ES01A ES01F ES01Z
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. AS01Z AS01 AS01A ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F Tj (°C) IFSM (A) I F (AV) (A) Tstg (°C) t rr ➀ (µs) IR IR (H) (µA)

AS018R1-00

Contextual Info: GaAs IC SPST Switch Reflective DC–18 GHz AS018R1-00 Features Chip Outline 1.388 • Broadband DC–18 GHz ■ Low Loss, High Isolation, Reflective, Short 1.270 ■ 100% On-Wafer RF and DC Testing 1.145 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.727

AS018M2-65

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–18 GHz AS018M2-65 Features -65 • Broadband DC–18 GHz 0.388 9.86 mm ■ High Isolation, Non-Reflective ∅ 0.070 (1.78 mm) 0.115 (2.92 mm) ± 0.002 ■ 5 Lead Hermetic Package KOVAR 0.164 (4.16 mm) 0.328 (8.33 mm)

AS018R1-01

Abstract: AS018R1-10
Contextual Info: GaAs IC SPST Switch Reflective DC–10 GHz AS018R1-01, AS018R1-10 Features -01 • Broadband DC–10 GHz 0.220 5.59 mm 0.210 (5.33 mm) ■ Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP. ■ Capable of Meeting MIL-STD

Contextual Info: GaAs IC SPDT Switch Non-Reflective DC–18 GHz AS018M2-00 • High Isolation, Low Loss, Fast Switching ■ 100% On-Wafer RF and DC Testing 1.520 ■ 100% Visual Inspection to MIL-STD-883 MT 2010 0.839 2.240 ■ Broadband, DC–18 GHz 1.444 Chip Outline 0.648

AS018M2-01

Abstract: AS018M2-10 DC-10 DC80 V
Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-10 GHz ESAlpha AS018M2-01, AS018M2-10 Features -01 • Broadband DC-10 GHz 0.220 5.59 mm 0.210 (5.33 mm) «•-0.130 (3.30 mm) TYP. ■ High Isolation, Non-Reflective 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package

Contextual Info: GaAs IC SPDT Switch Low Loss Reflective DC–10 GHz AS018R2-01, AS018R2-10 Features -01 • Broadband DC–10 GHz 0.220 5.59 mm 0.210 (5.33 mm) ■ Reflective, Short 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.

1N4004

Abstract: 1N4004 MCC 1N4004-AS01 1N4004 146 AS01
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N4004-AS01 Features • • • 1 Amp Rectifier Low Current Leakage Metalurgically Bonded Construction Low Cost 400 Volts Maximum Ratings

AS018R1-01

Abstract: AS018R1-10
Contextual Info: GaAs IC SPST Switch Reflective DC–10 GHz AS018R1-01, AS018R1-10 Features -01 • Broadband DC–10 GHz 0.220 5.59 mm 0.210 (5.33 mm) ■ Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP. ■ Capable of Meeting MIL-STD