110NM Search Results

VDC048

Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 29, 2008 Obsolescence Notification No: Subject: 2708 Obsolescence of the Discrete S29NS128J Products Spansion LLC is announcing the obsolescene of the 110nm, 1.8V Burst Mode Floating Gate NOR

SPANSION gl512p FLASH

Abstract: GL256P GL512P GL128P SPANSION gl512p S29GL-P spansion S29GL128 S29GL256 GL01GP S29GL01G
Contextual Info: S29GL-N to S29GL-P Migration Migrating from S29GL-N 110 nm to S29GL-P (90 nm) Application Note 1. Introduction This application note has been developed to guide customers currently using the S29GL-N 110nm MirrorBit products to migrate to the S29GL-P 90nm MirrorBit products. This document outlines some of the similarities

Contextual Info: NT1GD72S4PB0FU 1GB PC2700 and PC2100 Registered DDR DIMM 184 pin Registered DDR DIMM Based on DDR333/266 512M bit B Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Differential clock inputs • Registered DDR DIMM based on 110nm 512M bit die B device,

S29VS064R

Abstract: S29NS016J0LBJW003 gate nor GWJ725 VDE044 S29VS064
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA February 19, 2009 Obsolescence Notification No: Subject: 2749 Obsolescence of the Discrete S29NS016J Products Spansion LLC is announcing the obsolescence of the 110nm, 1.8V Burst Mode Floating Gate NOR

S29AS016J70TFI010

Abstract: S29AS016J70 AS-016 vbk048 S29AS016J70BFI010E S29AS016J70BFI AS016J TS048 S29AS016J70TFI
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA July 29, 2010 Obsolescence Notification No: Subject: 2804 Obsolescence of the AS016J Packaged Products with the Model Numbers 01 or 02 Spansion LLC is announcing the obsolescence of the 110nm, 1.8V Floating Gate NOR AS016J

DDR333

Abstract: NT2GD72S4PB0FU-6K PC2100 PC2700
Contextual Info: NT2GD72S4NB0FU and NT1GD72S4PB0FU 2GB and 1GB PC2700 and PC2100 Registered DDR DIMM 184 pin Registered DDR DIMM Based on DDR333/266 512M bit B Die device Features • 184 Dual In-Line Registered Memory Module RDIMM • Differential clock inputs • Registered DDR DIMM based on 110nm 512M bit die B device,

Memory Interfaces

Abstract: DDR PHY ASIC ARM926EJ-S PBGA420 spear linux
Contextual Info: SPEAr Head digital engine TM Powerful, customizable, ARM-based SoC with large connectivity IP portfolio and memory interfaces SPEAr Head from STMicroelectronics is a powerful digital engine on 110nm HCMOS technology consisting of two main parts: an ARM-based architecture and an embedded

ADQ12

Abstract: ADQ14 Multi-Chip Package MEMORY F12 MARK MICRON mcp NS512 S29NS-N S72NS-N 7d8l S72NS512ND0
Contextual Info: S72NS-N Based MCPs Stacked Multi-Chip Product MCP MirrorBitTM Flash Memory & DRAM 128 Mb (8 M x 16 bit)/256 Mb (16 M x 16 bit), 110nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/Write, Burst Mode Flash Memory and 128/256-Mb (8/16-M x 16-bit) DDR DRAM

MX25L1633E

Abstract: MX25L1635D Macronix* MX25L1633E MXIC serial Flash MX25L163 AN072 MX25L* 86 MHz mx25l1633 MXIC MX
Contextual Info: APPLICATION NOTE Migrating to MX25L1633E from MX25L1635D 1. Introduction Macronix recently introduced the MX25L1633E family of product, based on the latest generation 110nm process technology, to replace MX25L1635D. This Application Note provides a comparison between the two products.

S71GL064NB0BHW0Z0

Abstract: S71GL064NB0BHW0U0 S71GL064N S71GL064NB0BH S71GL064NB0BHW S71GL064NB0B preventive TSC056 S71GL064NB0 S71GL064NB0BHW0Z
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 01, 2008 Obsolescence Notification No: Subject: 2739 Obsolescence of the 110nm, 3.0V MirrorBit Flash Memory products listed below Spansion LLC is announcing the discontinuation of the following products. See below for details:

s29al016j70

Abstract: AL008J s29al008j70 S29AL016J70TF s29al008j70tf S29AL008J70TFI030 s29al016j70tfi s29al008j70tfi al016j S29AL016J
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA May 10, 2010 Obsolescence Notification No: Subject: 2792 Obsolescence of the AL008J and AL016J Products with the Model Numbers 03 or 04 Spansion LLC is announcing the obsolescence of the 110nm, 3.0V Floating Gate NOR AL008J and

s98gl128pb0hw0210

Abstract: S71PL127NB0HHW4 S71PL127NB0HFW4U semiconductors replacement guide S71PL127NB0HHW4U s98gl S71PL127NB TSB064 S71PL127NB0HFW4U0
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 17, 2008 Obsolescence Notification No: Subject: 2738 Obsolescence of the 110nm, 3.0V MirrorBit Flash Memory products listed below Spansion LLC is announcing the discontinuation of the following products. See below for details:

M2N51264DSH8B1G-6K

Abstract: pc2700 memory M2N51264DSH8B1G
Contextual Info: M2N51264DSH8B1G 512MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B device, organized as 32Mx16 DDR SDRAM

Contextual Info: NT5DS32M16BS-5TI 512Mb DDR SDRAM - Preliminary Features • • • • • CAS Latency and Frequency CAS Latency 2 2.5 3 Maximum Operating Frequency MHz DDR400 166 200 • • • • • • • • DDR 512M bit, die B, based on 110nm design rules • Double data rate architecture: two data transfers per

Spansion S99

Abstract: s98ws256ne0fw0020 S99-50047-ES FTJ103 FLG103 50124 transistor s99 S99-50083 S99/S19 S99-50124-02
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA March 07, 2008 Obsolescence Notification No: Subject: 2689 Rev.A Obsolescence of the 110nm, 1.8V Burst Mode Mirror Bit Flash Memory product Families, including S29WS-N, S29NS-N, S71WS-N, S71NS-N, S72WS-N, S72NS-N,

s98ws768

Abstract: S29WS128N s99-50126 Spansion S99 s98ws256ne0fw0020 S99-50109 transistor s99 S99-50165 S98WS256NE S98WS-N
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 07, 2008 Obsolescence Notification No: Subject: 2731 Obsolescence of the 110nm, 1.8V Burst Mode MirrorBit Flash Memory product Families, including S29WS-N, S70WS-N, S71WS-N, S72WS-N, S75WS-N, and

Contextual Info: M1N51264DSH8B1G / M1N25664DSH4B1G M1S51264DSH8B1G / M1S25664DSH4B1G 512MB and 256MB PC2700 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device Features • 200-Pin Small Outline Dual In-Line Memory Module SO-DIMM • Unbuffered DDR SO-DIMM based on 110nm 512M bit die B

Contextual Info: NT5DS64M4CT NT5DS32M8CT NT5DS16M16CT 256Mb DDR SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 3 • • • • • Maximum Operating Frequency MHz DDR400 DDR333 (5T) (6K) 133 166 166 200 - • • • • • • • • • DDR 256M bit, die C, based on 110nm design rules

NT5DS16M16CT-6K

Abstract: NT5DS32M8CT DDR333 DDR400 NT5DS16M16CT NT5DS32M8CT-5T NT5DS64M4CT v562
Contextual Info: NT5DS64M4CT NT5DS32M8CT NT5DS16M16CT 256Mb DDR SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 3 • • • • • Maximum Operating Frequency MHz DDR400 DDR333 (5T) (6K) 133 166 166 200 - • • • • • • • • • DDR 256M bit, die C, based on 110nm design rules

s98ws256ne0fw0020

Abstract: Spansion S99 50126 s98ws768 50155 transistor s99 S29WS128N S29WS-N S71WS-N S72WS-N
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 06, 2008 Obsolescence Notification No: Subject: 2731 Obsolescence of the 110nm, 1.8V Burst Mode MirrorBit Flash Memory product Families, including S29WS-N, S70WS-N, S71WS-N, S72WS-N, S75WS-N, and

GL128N

Abstract: gl512n GL256N S29GL-N 128KB MCP market Transistor 512L
Contextual Info: Implementing Simultaneous Operations in a Simultaneous Read/Write Enabled MCP S74GL256N/640N Application Note Introduction The S29GL-N family of devices is a Spansion 3.0 V, page mode Flash memory solution manufactured using 110nm MirrorBitTM technology. While these products offer high-density at competitive costs, they cannot perform the Simultaneous Read/Write operation due to their single-bank architecture. However, two of these mono-bank

Spansion

Abstract: S71VS064R S29VS064 NLB056 NS032J S29VS064R VDE044 NSB056 S29NS032J Spansion MCP products, 56
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA September 23, 2009 Obsolescence Notification No: Subject: 2775 Obsolescence of the discrete 110nm CMOS 1.8V NS032J Products & the MultiChip Packages MCP containing 110nm CMOS 1.8V NS032J Products.

NT5DS8M16FS-5T

Abstract: NT5DS8M16FS-6K NT5DS8
Contextual Info: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T

Nanya nt5ds8m16fs

Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
Contextual Info: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8