ES01Z Search Results

70 es 14 s

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter I F（ AV） （A） VRM （V） Type No. AS01Z AS01 AS01A ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F Tstg Tj （℃） （℃） IFSM （A） VF

AS01

Abstract: AS01A AS01Z ES01 ES01A ES01F ES01Z
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. AS01Z AS01 AS01A ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F Tj (°C) IFSM (A) I F (AV) (A) Tstg (°C) t rr ➀ (µs) IR IR (H) (µA)

GH-3S

Contextual Info: SANKEN ELECTRI C U S A HE Fast Recovery Diodes IV r m : 1 0 0 — D I ? 741 ODDDI ET fi | • I o : 0 .3 - 1 5 0 0 V T RH/ES/RS/RH/GU/RU/GH/EU V rsm V V rm (V) Io (A) Type N o \ ^ RH 1Z RH 1 RH 1A RH 1B RH 1C ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

ru 52 8 pin

Abstract: diodes ru 4c fmqg5g
Contextual Info: Fast Recovery Rectifier Diodes 4-2 4-2-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (µS) (µS) Package Fig. No. Part No. EU 2YX 1.2 25 0.2 0.08 Axial(E1) 3 RS 1A RU 2YX 1.5 30 0.2 0.08 Axial(R1) 4 AU02A RU 3YX 2.0 50 0.2 0.08 Axial(R2) 5 EU02A 70 0.4

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

AS01

Abstract: AU01 AU02 ES01 ES01F EU01 EU02 FMU-14S FMU-24S FMU-34S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 20 0.2 55 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

FMPG5F

Abstract: FMS-3FU fmpg3f FMP-G3FS FMUG16S FMS3FU
Contextual Info: FAST-RECOVERY RECTIFIER DIO DES Absolute M axim um Ratings Type No. V rm lo V (A) RC 2 2000 EH1Z 200 EH 1 400 0.2 0.6 20 30 V rm lo I fsm (V) (A) (A) Elee. Char, at 25“ C vF *FSM (A) Elee. Char, a t 0c Absolgte Maximum Ratings Type No. Ir EU02Z 200 Max. @ lF

FMU22

Abstract: AS01 AU01 AU01Z AU02Z ES01Z EU01 EU01Z EU02Z FMU-12S
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-hole VRM V 100 200 IF (AV) (A) 600 Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA) V R=VRM VR=V RM max max Ta (°C) trrq (µs) IF/IRP (mA) trrw (µs) IF/IRP (mA)

AS01A

Abstract: AU01A AU02A ES01A EU01A EU02A FMU-16S FMU-26S FMUP-1056 FMUP-1106
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

RN4Z

Contextual Info: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20

Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot t rr 1 (µs) VR = VRM VR = VRM Ta (°C) max max IF / I FP (mA) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 15 –40 to +150 2.5 0.25 10 150 100

10zrl

Contextual Info: General-purpose Diodes Rectifier Diodes • Surface-mount Type Absolute Maximum Ratings Part No. VRM V 1.0 1.0 10 –40 to +150 0.98 1.0 10 30 –40 to +150 1.0 1.0 10 45 –40 to +150 0.98 1.0 10 I FSM (A) 0.9 30 –40 to +150 SFPM-62 1.0 45 SFPM-54 0.9

Contextual Info: 5-2. Fast Recovery Rectifier Diodes Axial Type Ta = 25°C Absolute Maximum Ratings Type No. RC 2 EH 1Z VRM IF (AV) IFSM (V) (A) (A) 2000 0.20 20 VF (V) IR (µA) trr1 (µs) trr2 (µs) (°C) max max max max –40 to +150 2.00 10 4.0 1.30 Tj (Ta = 25°C) Absolute Maximum Ratings