AU01A Search Results

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com AU01 ~ AU01A IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES PRV : 200 ~ 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current

Contextual Info: AU01A FAST RECOVERY RECTIFIER DIODE PRV : 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 25.4

aS01Z

Abstract: CTB-34
Contextual Info: SANKEN ELECTRIC U S A 11E D | ? T ì 0 7 m DDODG?^ â | High Speed Rectifier Diodes BVrm: 200—650V •loiO.SA T - AU/AS/AH^/AP X ' O AU01Z 250 200 AU01 450 400 AU01A 650 600 AU02Z 250 200 AU02 450 400 AU02A 650 600 AS01Z 250 200 AS01 450 400 AS01A AH01Z

AU01

Abstract: AU01Z AU01A
Contextual Info: AU01 ~ AU01A FAST RECOVERY RECTIFIER DIODES PRV : 200 ~ 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

AU01A

Contextual Info: SANKEN ELECTRIC CO., LTD. AU01A 1. Scope The present specifications shall apply to Sanken silicon rectifier diode, AU01A. 2. Outline Type Silicon Rectifier Diode Mesa Type Structure Resin Molded Applications High Frequency Rectification, etc. 3. Flammability

FMS Series

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter Type No. VRM （V） RS 1A 600 RS 1B 800 AU01Z 200 AU01 400 AU01A 600 AU02Z 200 AU02 400 AU02A 600 I F（ AV） （A） IFSM （A） Tj Tstg （℃） （℃）

AU01

Abstract: AU01A AU01Z AU02 AU02A AU02Z
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. VRM (V) RS 1A 600 RS 1B 800 AU01Z 200 AU01 400 I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) IR (µA) VF (V) t rr ➀ (µs) IR (H) (µA) 50Hz Half-cycle Sinewave

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

ru 52 8 pin

Abstract: diodes ru 4c fmqg5g
Contextual Info: Fast Recovery Rectifier Diodes 4-2 4-2-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (µS) (µS) Package Fig. No. Part No. EU 2YX 1.2 25 0.2 0.08 Axial(E1) 3 RS 1A RU 2YX 1.5 30 0.2 0.08 Axial(R1) 4 AU02A RU 3YX 2.0 50 0.2 0.08 Axial(R2) 5 EU02A 70 0.4

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: I F AV (A) Part Number 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4

Contextual Info: 4-2 Fast Recovery Diodes ●Thru-hole VRM V 100 200 IF (AV) (A) 600 Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA) V R=VRM VR=V RM max max Ta (°C) trrq (µs) IF/IRP (mA) trrw (µs) IF/IRP (mA)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

RU 1A

Abstract: FMUG16 FMU-G16S AU02A ES01A EU01A EU02A FMU-16S FMU-26S FMU-36S
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta (°C) max max t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

Contextual Info: AU01 - AU01Z FAST RECOVERY RECTIFIER DIODE PRV : 200 - 600 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

diode ru

Abstract: diode RU 3AM AS01A AU01A AU02A ES01A EU01A EU02A FMU-16S FMU-26S
Contextual Info: Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot VR = VRM VR = VRM Ta max max (°C) t rr 1 (µs) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) IF / I FP (mA) –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20

EH 1

Abstract: ES 1Z ES 1 Fast Recovery Diodes FMUG16 FMY-1106S FMY-1036S fmy-1106 FMY1106
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)