J32AQ Search Results

J32AQ

Contextual Info: 32 Lead Ceramic Dual-in-Line Package EPROM NS Package Number J32AQ All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

Contextual Info: Package Outlines 32 Lead Ceramic Dual-in-Line Package Number J32AQ 0.76- 1.40 BY DEVICE SIZE 0.175 (4 .4 5 ) MAX 0:?g5 MAX TYP (5.72) j | ~F~~X All dimensions are in inches (millimeters) unless otherwise noted www.fairchildsemi.com 702 | | fj).0 1 5 -0.060

27C512 National Semiconductor

Abstract: 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020 NM27C020Q
Contextual Info: June 1995 NM27C020 2 097 152-Bit 256K x 8 UV Erasable CMOS EPROM General Description The NM27C020 is a high performance 2 097 152-bit EPROM It is organized as 256 K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs The ‘‘Don’t Care’’ feature during read operations enables memory expansions up

Contextual Info: LTR | DESCRIPTION E.C.N. DATE 08998 0 1 /0 7 /9 2 BY/APP’ D h* CD 8 D ¡R E V IS E AND REDRAW 1 . 6 6 0 MAX • r i r"i r i r i r i i" i f"! r i p ^ r i O ^ A ^ A R . 025 'v,y 1I . 5 8 5 MAX u u u u u u u ulu w u u u u u u 1 \ 16 R .0 3 0 -.0 5 5 TY P .0 5 0 -.0 6 0

M27C040

Abstract: 27C040Q
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide

National Controls ne 545

Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process

C1995

Abstract: J32AQ NM27C040 VA32A
Contextual Info: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through

NM27C010

Contextual Info: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with

transistor BC 458

Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

27C040

Abstract: 27C256 27C512 FM27C010 27C512 UV
Contextual Info: FM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The FM27C010 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

marking codes fairchild

Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Contextual Info: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4

FM27C040

Abstract: 27C010 FM27C040QXXX
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

Contextual Info: semiconductor NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is manufactured using Fairchild’s advanced CMOS AMG™ EPROM technology. The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

Contextual Info: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is manufactured using Fairchild’s advanced CMOS AMG EPROM technology. The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

27C010

Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity

national eprom

Abstract: NM27C010Q 27C020 27C040 27C080 27C256 27C512 NM27C010 ee 3007 NT120
Contextual Info: January 1994 Semi co n d u C t 0 r NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance, 1,048,576-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility

J32AQ

Abstract: NM27C040 VA32A
Contextual Info: tm NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-com patibility with byte-wide

NMC27C010

Abstract: eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 NM27C010 27C256 wsi
Contextual Info: NM27C010 1 048 576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance 1 048 576-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 128K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through

fg 166 a2

Abstract: capacity of EPROM FM27C010 27C040 27C256 27C512
Contextual Info: FM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The FM27C010 is manufactured using Fairchild’s advanced CMOS AMG EPROM technology. The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

93c46ln

Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Contextual Info: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .

8A13

Abstract: 27C01
Contextual Info: MEMORY 5TE » • b S Q l l E b G D_b732T_7GT_ National mm Semiconductor PRELIMINARY November 1992 NM27C020 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM / General Description The NM27C020 is a high performance 2,097,152-bit EPROM. It is organized as 256 K-words of 8 bits each. Its

27C010

Abstract: 27C040 27C080 27C256 27C512 NM27C020
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process

27C010

Abstract: 27C040 27C080 27C256 27C512 NM27C020
Contextual Info: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM 27C020 is a high speed 2 M egabit CM OS UV-EPROM m anufactured on Fairchild’s advanced sub-m icron technology. Utilizing the AM G architecture, this advanced CM OS process

27C020

Abstract: 27C040 27C080 27C256 27C512 NM27C010
Contextual Info: January 1994 Semi co n d u C t 0 r NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance, 1,048,576-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility