J28CQ Search Results

J28CQ

Contextual Info: 28 Lead Ceramic Dual-in-Line Package EPROM NS Package Number J28CQ All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

Contextual Info: Package Outlines 28 Lead Ceramic Dual-in-Line Package Number J28CQ 1.465 0 . 7 6 - 1 .40 UV W IN D O W TYP 0.10 0 225 MAX TYP ( 5 .72 ) _ , r—(2.54) - i Glass Sealant * MAX 0 . 590 - 0.620 ( 14 . 9 9 - ( 15 .75 ) ( 1. 5 2 - 2 . 54 )

27C010

Abstract: 27C040 27C256 FM27C512 FM27C512Q
Contextual Info: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while

27C020

Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: tm NM27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with

27lC256

Abstract: NM27LC256 TVR 07 spec NM27LC512
Contextual Info: May 1992 NM 27LC512 524,288-Bit 64k x 8 Low C urrent C M O S EP R O M General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current In both the active and standby modes.

27C080

Abstract: 27C010 27C020 27C040 27C256 C1995 NM27P512 27C256 DIP
Contextual Info: NM27P512 524 288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM configured as 64k x 8 It’s designed to simplify microprocessor interfacing while remaining compatible with standard

transistor BC 458

Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

27lc64

Abstract: 27lc512 NM27LC256 C1995 J28CQ NM27LC256Q250
Contextual Info: NM27LC256 262 144-Bit 32k x 8 Low Current CMOS EPROM General Description Features The NM27LC256 is a 32k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC256 consumes a mere 17 5 mW (typical) making it ideal for battery powered portable and hand held systems and for systems using ‘‘in-line’’ power

NM27C128Q

Contextual Info: NM 27C 128 131,072-Bit 16K x 8 High P erform ance CM O S EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as

27C010

Abstract: 27C020 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C 128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with

marking codes fairchild

Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Contextual Info: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4

b058

Abstract: NM27C512 National Controls ne 545 27C010 27C020 27C040 27C080 27C256
Contextual Info: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while

27C128 General Semiconductor

Abstract: 27c128
Contextual Info: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with

Contextual Info: I.465 MAX NOTES: UN LESS O T HERWISE S P ECIFIED 1. LEAD F I N I S H TO BE ONE OF THE FOLLOWING: a 200 M I C R O I N C H E S M I NIMUM S OLDER ME A S U R E D AT THE CREST OF THE MAJOR FLATS. b) 2 0 0 - 8 0 0 M I C R O I N C H E S TIN PLATE OVER 50-300 MICRO I N C H E S NICKEL UNDERPLATE

27128 eprom

Abstract: 27C128 NM27C128 NM27C128QE 27128 memory 8F83
Contextual Info: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with Fairchild’s latest CMOS split gate EPROM technology which enables it to operate at speeds as fast as

70.4 L marking

Contextual Info: Package Outlines Section 3 Contents Tape and R ee Part

27lc64

Abstract: 27lC256 27LC010 national semiconductor 27lc256 NM27LC512 J28CQ MBH32A C1995
Contextual Info: NM27LC512 524 288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC512 consumes a mere 30 mW making it ideal

EPROM 27c010

Abstract: 27C010 27C020 27C040 27C080 27C256 A12C NM27C512
Contextual Info: tm NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description T h e N M 2 7 C 5 1 2 is on e m e m b e r of a high d e n s ity E P R O M F a m ily w h ic h ra nge in d e n s itie s up to 4 M e gabit. T h e N M 2 7 C 5 1 2 is a high p e rfo rm a n c e 5 1 2 K U V E ra s a b le E le ctri­

93c46ln

Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Contextual Info: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .

Fairchild TVR

Abstract: J28C
Contextual Info: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. General Description The NM27C512 is a high performance 512K UV Erasable Electri­ cally Programmable Read Only Memory (EPROM). It is manufac­

27lC256

Contextual Info: June 1992 NM27LC64 65,536-Bit 8K x 8 Low Current CMOS EPROM General Description Features The NM27LC64 is a 8K x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes. The NC27LC64 consumes a mere 12.5 mW (typical) in

toilt

Abstract: NM27P512 27c08
Contextual Info: June 1992 NM27P512 524,288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 is a 512K Processor Oriented EPROM con­ figured as 64k x 8. It’s designed to simplify microprocessor interfacing while remaining compatible with standard

ceramic package

Abstract: CERDIP Package J08A J14A J16A J18A J20A J22A J24A J24AQ
Contextual Info: Ceramic Dual-in-Line Package Cerdip 8 Lead Ceramic Dual-in-Line Package NS Package Number J08A 2000 National Semiconductor Corporation MS101109 www.national.com Ceramic Dual-in-Line Package (Cerdip) August 1999 Ceramic Dual-in-Line Package (Cerdip) 14 Lead Ceramic Dual-in-Line Package

Contextual Info: SEMICONDUCTOR TM NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is one member of a high density EPROM Family which range in densities up to 4 Mb. The NM27C128 is a high performance 128K UV Erasable Electri­ cally Programmable Read Only Memory. It is manufactured with