J24AQ Search Results

J24AQ

Contextual Info: 24 Lead Ceramic Dual-in-Line Package EPROM NS Package Number J24AQ All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

marking codes fairchild

Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Contextual Info: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4

Contextual Info: Package Outlines 24 Lead Ceramic Dual-in-Line Package Number J24AQ 1.260 MAX 0.76-1.4 UV WINDOW 0.590-0.620 (15.03-15.79) 0.008-•0.015 (0.20 - 0.38) TYP 0.685 (17.40) JL\ +0.025 (0.64) -0.060 (-1.523) AN dimensions are in inches (millimeters) unless otherwise noted

27C32

Abstract: national semiconductor 27c32 EPROM 27C32 MM2716 27C128 27C256 27C64 MM2716-1 MM2716E
Contextual Info: MM2716 National Semiconductor MM271616,384-Bit 2048 x 8 UV Erasable PROM P aram eter/O rder N um ber MM2716 MM2716-1 450 350 450 5V ± 5% 5V ± 10% 5V ± 5 % A cce ss Tim e <ns) V q c P ow er S upply MM2716E General Description Features The MM2716 is a high speed 16k UV erasable and ele c tric ­

EPROM 27C32

Abstract: 27C32 2732 cmos eprom 27c32 eprom eprom 27c64 PROGRAMMER CIRCUIT 27C64 EPROM programmer 27C128 27C256 27C64 J24AQ
Contextual Info: NMC27C16B 16,384-Bit 2048 x 8 CMOS EPROM General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements.

Contextual Info: SEMICONDUCTOR TM General Description Features T h e N M C 2 7 C 1 6 B is a high p e rfo rm a n c e 1 6 K U V e ra s a b le an d • L o w C M O S p o w e r c o n s u m p tio n e le c tric a lly re p ro g ra m m a b le C M O S E P R O M , id e a lly su ite d for

27C16 EPROM

Abstract: eprom 27C16 27C32 27C16 27c16 uv 27C16Q 27C128 27C256 27C64 C1995
Contextual Info: 27C16 16 384-Bit 2048 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and

transistor BC 458

Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
Contextual Info: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and

C27C16BQ

Contextual Info: SEMICONDUCTOR TM NMC27C16B 16,384-Bit 2048 x 8 CMOS EPROM General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CM OS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and

ic programmer

Contextual Info: s ie b S D llS b NATL S E MI CO ND 00b52fc.l 33T «NSC3 MEMORY gH National SLA Semiconductor ~ r- NMC27C32B 32,768-Bit (4096 x 8) CMOS EPROM General Description Features The NMC27C32B is a 32k UV erasable and electrically re­ programmable CMOS EPROM, ideally suited for applica­

27c32

Abstract: 27C2S6 EPROM 27C32 MM2758 eprom 27C128 27c12 eprom 27C16 MM2758A 27C16 27C64
Contextual Info: MM2758 523 National ÉÆ Semiconductor MM2758 8,192-Bit 1024 x 8 UV Erasable PROM General Description Features The MM2758 is a high speed 8k UV erasable and e lectri­ c a lly reprogram m able EPROM, ideally suited fo r ap plica­ tio n s w here fa s t turnaround and pattern experim entation

27C32

Abstract: EPROM 27C32 J24AQ NMC27C16B NMC27C16BQ NMC27C16BQ150 NMC27C16BQ200 NMC27C16BQE200 27C64 ROM
Contextual Info: E M I C O N D U C T D R tm General Description Features T h e N M C 2 7 C 1 6 B is a high p e rfo rm a n c e 1 6 K U V e ra s a b le an d e le c tric a lly re p ro g ra m m a b le C M O S E P R O M , id e a lly su ite d for a p p lic a tio n s w h e re fa s t tu rn a ro u n d , p a tte rn e x p e rim e n ta tio n an d

NMC27C16bq

Contextual Info: December 1993 N M C 2 7 C 1 6 B 1 6 ,3 8 4 -B it 2 0 4 8 x 8 C M O S E P R O M General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern exper­

27C128

Abstract: 27C16 27C256 27C64 J24AQ NMC27C32B NMC27C32BQ NMC27C32BQ150
Contextual Info: SEMICONDUCTOR T M NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description Features T he N M C 2 7 C 3 2B is a 3 2 k UV e ra sa b le and e le c tric a lly reprogram m able CM OS EPROM, ideally suited for applications w here fast turnaround, pattern experim entation and low power

NMC27C32

Abstract: NMC2732 27C216 NMC27C32EH-45 27C128 27C256 NMC27C32E-45 NMC27C32HE-45 NMC27C32-35 P2CMOS
Contextual Info: NMC27C32 i/W \ National Æ à Semiconductor NMC27C32 32,768-Bit 4096 x 8 UV Erasable CMOS PROM General Description Features The NMC27C32 is a high speed 32k UV erasable and elec­ trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation

93c46ln

Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Contextual Info: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .

ic eprom 27c16

Abstract: 27C1S 27C16 EPROM 2SC 2625 27c16
Contextual Info: January 1989 Semiconductor 27C16 16,384-Bit 2048 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica­ tions where fast turnaround, pattern experimentation and

NMC27C16BQ150

Abstract: 27C32 27C128 27C256 27C64 J24AQ NMC27C16B NMC27C16BQ 27128 pin diagram
Contextual Info: NMC27C16B National Semiconductor NMC27C16B 16,384-Bit 2048 x 8 CMOS EPROM General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern exper­

eprom 27c64 PROGRAMMER CIRCUIT

Abstract: eprom 27C16 27C128 27C16 27C256 27C64 J24AQ NMC27C32B NMC27C32BQ NMC27C32BQ150
Contextual Info: NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description Features T h e N M C 2 7 C 3 2 B is a 3 2 k U V e ra s a b le a n d e le c tric a lly re p ro g ra m m a b le C M O S E P R O M , ide a lly s u ite d fo r a p p lic a tio n s w h e re fast tu rn a ro u n d , p a tte rn e x p e rim e n ta tio n an d lo w po w e r

27C32

Abstract: 27c32 eprom NMC27C16 NMC27C16-55 eprom 27c64 NMC27C16-35 27C128 27C256 27C64 MM2716
Contextual Info: NMC27C16 ZgA National Æ Â Semiconductor NMC27C16 16,384-Bit 2048 x 8 UV Erasable CMOS PROM General Description Features The NMC27C16 is a high speed 16k UV erasable and elec­ trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation

ceramic package

Abstract: CERDIP Package J08A J14A J16A J18A J20A J22A J24A J24AQ
Contextual Info: Ceramic Dual-in-Line Package Cerdip 8 Lead Ceramic Dual-in-Line Package NS Package Number J08A 2000 National Semiconductor Corporation MS101109 www.national.com Ceramic Dual-in-Line Package (Cerdip) August 1999 Ceramic Dual-in-Line Package (Cerdip) 14 Lead Ceramic Dual-in-Line Package

iso 1043-1

Abstract: DIN 6120 iso 1043-1 polypropylene j1344 sae j1344 W28B D1972 DIN6120 d24j TA11A
Contextual Info: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container

fairchild 27C64

Abstract: eprom 27c64 PROGRAMMER CIRCUIT eprom 27C16 J24AQ NMC27C32B NMC27C32BQ NMC27C32BQ150 NMC27C32BQ200 NMC27C32BQE200 2764 memory chip
Contextual Info: E M I C O N D U C T D R tm NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description The NM C27C32B is a 32k UV Features e r a s a b le and e le c tr ic a lly • L o w C M O S p o w e r c o n s u m p tio n re p ro g ra m m a b le C M O S E P R O M , id ea lly s u ite d fo r a p p lic atio n s

MM2758

Abstract: MM2758A 27C1S ti 27c32 MM2758Q-A mm2758q 2716 8k eprom
Contextual Info: MM2758 8,192-Bit 1024 x 8 UV Erasable PROM General Description Features The MM2758 is a high speed 8k UV erasable and electri­ cally reprogrammable EPROM, ideally suited for applica­ tions where fast turnaround and pattern experimentation are important requirements.