27C2S6 Search Results

tms jl 27C256-15

Abstract: tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15
Contextual Info: TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS25BH- SEPTEMBER 1964 - REVISED NOVEMSER 1997 Organization . . . 32768 by 8 Bits J PACKAGE TO P VIEW Single 5-V Power Supply Pin Compatible With Existing 256K MOS

27C32

Abstract: national semiconductor 27c32 EPROM 27C32 MM2716 27C128 27C256 27C64 MM2716-1 MM2716E
Contextual Info: MM2716 National Semiconductor MM271616,384-Bit 2048 x 8 UV Erasable PROM P aram eter/O rder N um ber MM2716 MM2716-1 450 350 450 5V ± 5% 5V ± 10% 5V ± 5 % A cce ss Tim e <ns) V q c P ow er S upply MM2716E General Description Features The MM2716 is a high speed 16k UV erasable and ele c tric ­

27512

Abstract: 2732a jl eprom intel 27512 eprom 27512 eprom 27512-170V05 27512-200V10 intel 2716 eprom 27C84 iAPX 286 Intel 2147H
Contextual Info: intei 27512 512K 64K x 8 PRODUCTION AND UV ERASABLE PROM Software Carrier Capability Low Power — 125 mA max. Active — 40 mA max. Standby 170 ns Maximum Access Time Two-Line Control inteligent Identifier Mode — Automated Programming Operations indigent Programming™ Algorithm

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27c256 intel eprom 2732A 2716 eprom datasheet 27C256DC a12g intel 2716 eprom 27C256 N27C256-200V10 80286 address decoder
Contextual Info: in t e i 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Time EPI Processing — Maximum Latch-up Immunity Low Power Consumption — 100 ( i A Standby, 30 mA Active Simple Interfacing — Two Line Control — CMOS and TTL Compatible Fast Programming

m27p512

Contextual Info: NM27P512 03 National ü Sem iconductor NM27P512 524,288-Bit 64K x 8 Processor Oriented CMOS EPROM General Description Features The NM27P512 Is a 512K Processor Oriented EPROM con­ figured as 64k x B. It’s designed to simplify microprocessor interfacing while remaining compatible with standard

27C256A-20

Abstract: 27C256A-25 MBM27C256A-20 BM27C256A 27C256A20 MBM27C256A-15 Fujitsu 27C256A
Contextual Info: CM O S UV ERASABLE 262144-BIT READ ONLY MEMORY FU JITSU MBM27C256A-15 MBM27C256A-17 MBM 27C256A-20 MBM27C256A-25 September 1987 Edition 2.0 C M O S 262144 BIT U V E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N LY M E M O R Y

MB831124-35

Abstract: 831124-35 bm27c MBM27C256 MB831124
Contextual Info: F U J IT S U MOS M em ories • M B 8 3 1 124-3 5 1M-BIT 131,072x8 CMOS Read Only Memory D e s c rip tio n The Fujitsu MB831124 is a CMOS Si-gate mask-programmable static read only memory organized as 131,072 words by 8 bits. The MB831124 has TTL-compatible I/O and 3-state output Jevel

INTEL 2764A

Abstract: 2764A1 EPROM 2764a eprom 2716 2764A-1 2764A-2 D2764A EPROM intel 27256 27C128 INTEL 2764A-20
Contextual Info: intei 2764A 64K 8K x 8 UV ERASABLE PROMs inte ligent Id e n tifie r^ Mode Fast Access Time—HMOS* II E — 180 ns Cerdip D2764A-1 Industry Standard Pinout. . . JEDEC Approved . . . 28 Lead Package Moisture Resistant (S ee P acka g ing S pec, O rd e r # 2 3 1 3 6 9 )

ic programmer

Contextual Info: s ie b S D llS b NATL S E MI CO ND 00b52fc.l 33T «NSC3 MEMORY gH National SLA Semiconductor ~ r- NMC27C32B 32,768-Bit (4096 x 8) CMOS EPROM General Description Features The NMC27C32B is a 32k UV erasable and electrically re­ programmable CMOS EPROM, ideally suited for applica­

NMC27C128

Abstract: 87C12 NMC27C128BQ150 NMC27C128BQ250 NMC27C128BQ
Contextual Info: NMC27C128B NATL SEtllCON] -CNENOR Y> IDE D | bSOHSL, OObm^S T~ 4 6 ~ l3 _ 2g National Semiconductor Ö | PRELIMINARY NMC27C128B High Speed Version 131,072-Bit 16k x 8) UV Erasable CMOS PROM General Description Features The NMC27C128B is a high-speed 128k UV erasable and

Eprom B 2716 D

Abstract: NMC27C512AQ250 EPROM NMC27C512A NMC27C256
Contextual Info: NATL SEMICOND MEMORY 31E D bSQUHb QQt i340É PRELIM INARY National Semiconductor '7 '- V ^ - / 3 - 3 7 Features • Clocked sense amps for fast access time down to The NMC27C512A Is a high-speed 512k UV erasable and 150 ns electrically reprogrammable CMOS EPROM, Ideally suited

Contextual Info: eeeQ M27C256/E27C256 256K CMOS EPROM November 1989 Pin Configuration Features m 256K 32K x 8 CMOS EPROM DUAL-IN-LINE • Military and Extended Temperature Range 1 28 b vCc A12 L 2 27 b A14 v pp • -55°C to +125°C: 27C2S6 • -4 0 °C to +85°C: E27C256

NMC87C257QE-200

Abstract: NMC27C256
Contextual Info: NMC87C257 2 National Semiconductor NMC87C257 262,144-Bit 32K x 8 CM O S EPROM with On-Chip A ddress Latches General Description Features The NMC07C257 is a CMOS EPROM, ideally suited for ap­ plications where fast turnaround, pattern experimentation and low power consumption are important requirements.

Contextual Info: FUJITSU M I C R O E L EC TR ON IC S 374T7ki2 O O C H m S 23E D CMOS 262144 BIT UV ERASABLE AND ELEC TR IC A LLY PROGRAMMABLE READ ONLY MEMORY S December 1987 Edition 1.0 T - 4 G- 3 -2 PI The Fujitsu MBM 27C256A is a high speed 262,144 bits complementary MOS

27C256-200V10

Abstract: eprom 27c256 28 PIN DIP 120 NS P27C256-120V10 27C256DC INTEL 27128A EPROM 2732A INTEL 24 PIN CERAMIC DIP 27C256 N27C256-150V10 386TM
Contextual Info: In te l’ 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Tim e EPI Processing — Maximum Latch-up Immunity Low Pow er Consumption — 100 juA Standby, 30 mA Active Simple Interfacing — T w o Line Control — CMOS and TTL Com patible Fast Programming

27C2560

Abstract: 27c256 intel intel EPROM 27128 27C256-2 27C256 27C2S6 23136 intel Automotive eprom 2716 eprom 27c256
Contextual Info: in t e T 27C256 256K 32K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS Automotive Noise Immunity Features — ± 10% Vcc Tolerance — Maximum Latch-up Immunity Through EPI Processing New Qulck-Pulse Programming" Algorithm — 4 Second Programming Available In 28-Pin Cerdip Package

NM27C128Q

Abstract: HC-25/U E-PROM 27C512 EPROM 27c010 27128 block diagram NM27C128QE ab-5 national 27C010 27C020 27C080
Contextual Info: NM27C128 National ÆM Semiconductor NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is a high performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured with National’s latest CMOS split gate EPROM

MM2716-1

Abstract: MM2716 27C32 212si 27C128 27C256 27C64 MM2716E national semiconductor 27c32
Contextual Info: 553 National Æ Îà Semiconductor MM271616,384-Bit 2048 x 8 UV Erasable PROM MM2716 MM2716-1 450 350 450 5V ± 5% 5V ± 10% 5V ± 5 % Param eter/Order N um ber A ccess Time<ns) V c c Pow er Supply MM2716E General Description Features The MM2716 is a high speed 16k UV erasable and electric­

27513

Contextual Info: 27513 PAGE-ADDRESSED 512K 4 x 16K x 8 UV ERASABLE PROM • Paged Organization — Reduced Physical Address Requirement — No Bank Switching Logic Needed ■ Software Carrier Capacity ■ Automatic Page Clear — Resets to Page 0 on Power Up and On Demand with RST SignalO)

NM27C512

Contextual Info: NM27C512 53 Semiconductor National NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory. It is manu­ factured in National's latest CMOS split gate EPROM tech­

NMC27C64

Abstract: 27256 rom
Contextual Info: NMC27C64 &N a t i o n a l Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The NMC27C64 is a 64K UV erasable, electrically repro­ grammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turn­

d774

Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Contextual Info: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

NM27C64Q

Abstract: M27C128A-15F6 Am27C512-1500C M27C128A-12F1 nm27c256qe NM27C64Q-150 NM27C64Q150 NM27C256N200 28/H5GQ1H24MJR-T0C NM27C512Q150
Contextual Info: EPROM M ic r o c h ip EPROM Cross Reference Guide INTRODUCTION Legend: The purpose of this document is to provide a quick way to determine which EPROM parts are mechanical and electrical equivalents to Microchip devices. There is also a listing of manufacturer's part numbering schemes