MBH32A Search Results

MBH32A

Contextual Info: 32 Lead Molded Thin Small Outline Package EIAJ Type I NS Package Number MBH32A All dimensions are in millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

Contextual Info: Package Number MBH32A 0.79 20.01 0,037 • 0.042 (0.95 ■ 1.06) O ~ r 0.02 T y p (12.7) 117 16 ' 0 .0 0 6 -0 .0 0 1 0 (0.15-0.25) TYP 0.72 (18.4) 0.006 (0.150)±0.08 (Leadtram e Thickness) 0.010 / ' See Detail A (0-0.25) (0.4-0.6) D ETA IL A Typical All dimensions are in inches (millimeters) unless otherwise noted

Contextual Info: Decem ber 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G

27C010X

Contextual Info: M IC O N D U C T D R Ju ly 1998 tm FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Program mable R e a d o n ly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide JEDEC EPROMs

C1995

Abstract: J32AQ NM27C040 VA32A
Contextual Info: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through

NM27C010

Contextual Info: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with

NM27C010

Abstract: NM27LV010 PTFC
Contextual Info: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description The NM27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National's latest 1.2/x CMOS split gate SVG EPROM technology. This technology allows the part to operate at

SmD TRANSISTOR a42

Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 SNA10A TRANSISTOR BC 413 MO-220-WGGD-2 pdf on BC 187 TRANSISTOR MO-220-WKKD-2
Contextual Info: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages

marking codes fairchild

Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
Contextual Info: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4

Contextual Info: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The NM27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0.8p, CMOS split gate AMGtm

70.4 L marking

Contextual Info: Package Outlines Section 3 Contents Tape and R ee Part

27lc64

Abstract: 27lC256 27LC010 national semiconductor 27lc256 NM27LC512 J28CQ MBH32A C1995
Contextual Info: NM27LC512 524 288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC512 consumes a mere 30 mW making it ideal

27C010

Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
Contextual Info: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity

vjp44a

Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
Contextual Info: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages

NM27LV010B

Contextual Info: D ecem ber 1994 NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec­ trica lly Program m able Read O nly Memory. It is m anufac­ tured using N ational’s latest 0.8/j, C M OS split gate AMGtm

NMC27C010

Abstract: eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 NM27C010 27C256 wsi
Contextual Info: NM27C010 1 048 576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance 1 048 576-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 128K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through

NM27LV010B

Contextual Info: General Description The NM27LV010B is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s latest 0.8µ CMOS split gate AMG EPROM technology. This technology allows the part to operate at speeds as fast as 250 ns over industrial temperatures

93c46ln

Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
Contextual Info: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .

8A13

Abstract: 27C01
Contextual Info: MEMORY 5TE » • b S Q l l E b G D_b732T_7GT_ National mm Semiconductor PRELIMINARY November 1992 NM27C020 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM / General Description The NM27C020 is a high performance 2,097,152-bit EPROM. It is organized as 256 K-words of 8 bits each. Its

Contextual Info: m ic o n d u c t d r t m NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The NM27LV010 is a high perform ance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s AM G EPROM technology. This technology allows

TSOP 86 Package

Abstract: MBH32A MBS28A MDA44 MDB44
Contextual Info: Thin Small Outline Package TSOP 28 Lead Molded Thin Small Outline Package NS Package Number MBS28A 1999 National Semiconductor Corporation MS101177 www.national.com Thin Small Outline Package (TSOP) May 1999 32 Lead Molded Thin Small Outline Package, EIAJ, Type I

iso 1043-1

Abstract: DIN 6120 iso 1043-1 polypropylene j1344 sae j1344 W28B D1972 DIN6120 d24j TA11A
Contextual Info: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container

Contextual Info: November 1994 Semiconductor N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The NM27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National’s latest O.B/j, CMOS split gate AMGtm

A15C

Abstract: MBH32A NM27LV010
Contextual Info: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M I C O N D U C T O R tm NM27LV010 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010 is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using