PTFC Search Results

TL205

Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum

Contextual Info: PTFC262157FH advance specification Confidential, Limited Internal Distribution Description advance specification Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Advance Specification Data Sheets describe products that are being considered by Infineon

SEK4

Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

Contextual Info: PTFC261402FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 2620 – 2690 MHz Description The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620

Contextual Info: PTFC270051M advance specification Confidential, Limited Internal Distribution Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's

Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC260362SC Thermally-Enhanced High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz Description The PTFC260362SC is a 32-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include input and output matching,

PTFC262808SV

Contextual Info: PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with

Contextual Info: PTFC260362SC Thermally-Enhanced High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications

Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's

Contextual Info: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's

PLATINUM RESISTOR

Abstract: PTFN Pt 1000 IEC 751 pt sensors PTFC rtds pt 1000 temperature sensor C101B edison 501 Platinum Resistance Temperature sensor
Contextual Info: g RTDs: TYPE PT PLATINUM SENSORS FOR TEMPERATURE MEASUREMENT DESCRIPTION: APPLICATIONS: Thin film RTD sensing element on ceramic substrate • · · · · FEATURES: • Characteristics according to DIN IEC 751 • Temperature range: -50 to +600oC • Excellent long term stability

R14 P1F

Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
Contextual Info: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92CF26AXBG Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”. TMP92CF26A

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
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Contextual Info: VOLTAGE REGULATOR K D @ C S RX5RL S E R I E S OUTLINE The RX5RL Series are voltage regulator ICs with high accuracy output voltage and ultra-low quiescent cur­ rent by CMOS process. Each of these ICs consists of a voltage reference unit, an error amplifier, a driver tran­

68HC05E2

Abstract: MDR 68 pinout ptc 75s 00FF 68HC05E16 68HC705E24 HC05 M68HC05 QFP-44 Nippon capacitors
Contextual Info: HC05E16GRS/D REV 0.8 68HC05E16 68HC705E24 SPECIFICATION Rev. 0.8 General Release MOTOROLA, August 24, 1994 Microcontroller Design Center Munich, Germany 68HC05E24/68HC05E16 Specification Rev. 0.8 TABLE OF CONTENTS CHAPTER 1 INTRODUCTION. 1

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

Contextual Info: 3 S S .9 5 0 CM a O Li:i ♦ r t + •— f — + * * f — U45 1.595 1 .0 3 0 ^ 1-050 Li u . 0 5 0 NOTE- . . TO B E 'U S E D ^ T H A PPÄÖ PR /4TE C o m m e /?c ja l m a t ^ / v- il o k T ^ p in s HOUSING» N* MATERIAL 4 COLOR j-4 ö o e 7ö -o NYLON NATURAL

Contextual Info: BACK LAN83C171 ADVANCE INFORMATION LAN83C171 - EPIC/XF ACPI / PC 97 Compliant Integrated PCI 10/100Mb/s Ethernet Controller FEATURES • • • • • • • • • • • • • • • • IEEE 802.3 Compatible 10/100 Mb/s Ethernet Controller Fully Compliant Glueless PCI Version 2.1

7411 pin configuration

Abstract: display lcd 13pin mac 87A6 MCF51EM256 AD161 chn 731 soft start motor control diagram CSR 8670 HCS08 MCF51EM128
Contextual Info: MCF51EM256 Series ColdFire Integrated Microcontroller Reference Manual Devices Supported: MCF51EM256 MCF51EM128 Document Number: MCF51EM256RM Rev. 8 4/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: