PTFC262808FV Search Results
PTFC262808FV Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTFC262808FV-V1 | Cree/Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS | Original | 506.97KB | |||
| PTFC262808FV-V1-R0 | Cree/Wolfspeed | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS | Original | 506.97KB | |||
| PTFC262808FVV1R0XTMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS | Original | 424.5KB | |||
| PTFC262808FV-V1-R250 | Wolfspeed | IC AMP RF LDMOS | Original | 763.22KB | |||
| PTFC262808FVV1XWSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET TRANSISTORS | Original | 424.5KB |
PTFC262808FV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SEK4Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with |
Original |
ptfc262808fv280-watth-37275g-6/2sek4 | |
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Contextual Info: PTFC262808FV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808FV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with |
Original |
ptfc262808fv280-watth-37275g-6/2 | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
Original |
ptva093002tc960mhz758mhzpxac201602fc+6 | |
BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
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bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6 |