27LV010 Search Results

Contextual Info: Decem ber 1994 Semiconductor 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G

27LV010

Contextual Info: Ju ly 1998 s e m ic o n d u c t o r 27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programm ing tim e 50|is The FM 27LV010 is a low-pow er 1Mbit, 3.3V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into

Contextual Info: January 1998 S E M IC O N D U C T O R FM 27LV010-L 1 ,048,576-Bit 128K x 8 Low Voltage, Low Pow er EPROM General Description The 27LV010 is a low-power 1Mbit, 3.3V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga­ nized into 128K words with 8 bits per word. Any byte can be

Contextual Info: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0.8p, CMOS split gate AMGtm

NM27LV010

Abstract: T150 T200 T250 i5xf
Contextual Info: National N ovem ber 1994 Semiconductor 27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description T he N M 27LV010 is a high perform ance Low V oltage Electri­ cally Program m able Read O nly M emory. It Is m anufactured using N ational’s latest O.Sjli C M O S split gate A M G tm

NM27LV010B

Abstract: NM27LV010BTE 12.75V PGM fairchild 5555
Contextual Info: 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M IC O N D U C T O R tm 27LV010B 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using

Contextual Info: November 1994 Semiconductor N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The 27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National’s latest O.B/j, CMOS split gate AMGtm

A15C

Abstract: MBH32A NM27LV010
Contextual Info: 27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M I C O N D U C T O R tm 27LV010 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010 is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using

NM27C010

Abstract: NM27LV010
Contextual Info: National Semiconductor June 1992 N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The 27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National's latest 1,2/x CMOS split gate SVG EPROM

ic rom 27128

Abstract: 27512 27LV010 ic 2716 27010 27512 data sheet IC 2732 rom 2716 2732 rom 8K 27040
Contextual Info: WICE-M4 4MB ROM EMULATOR Supported Devices Capacity Quantity Low voltage Device Device Features 2K 8 2 2716 - 4K 8 2 2732 - 8K 8 2 2764 - 16K 8 2 27128 27LV128 32K 8 2 27256 27LV256 64K 8 2 27512 27LV512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8

Contextual Info: 27LV010B S E M I C O N D U C T O R TM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s split gate AM G EPROM technology. This technology

49LF002A

Abstract: 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A
Contextual Info: WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8 2 27040 27LV040 1024K 8 1 27080 27LV080 64K 16

27LV010A

Contextual Info: 27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM 27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs

Contextual Info: PRE LIM INARY Advanced Micro Devices 27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

Contextual Info: 27LV010 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C010 Low Power 3-Volt CMOS Operation 100 |iA max. Standby 26 mW max. Active at 1 MHz for Vcc = 3.3 VDC 138 mW max. Active at 5 MHz for Vcc = 5.5 VDC

Contextual Info: Features • Fast Read Access Tim e - 70 ns • Dual Voltage Range Operation - Low Voltage Power Supply Range, 3.0V to 3.6V - or Standard 5V ± 10% Supply Range • Com patible with JEDEC Standard AT27C010 • Low Power CMOS Operation - 20 i*A max. less than 1 jiA typical Standby for Vcc = 3.6V

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: a PRELIM INARY Advanced Micro Devices 27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V -3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

27LV010

Abstract: 1N914 AT27C010 AT27LV010 AT27LV010-12DC V010-25
Contextual Info: 27LV010 Features • • • • W ide Power Supply Range, 3.0 V to 5.5 V Fast Read Access Tim e -1 2 0 ns Compatible with JEDEC Standard AT27C010 Low Power 3.3-Volt CMOS Operation 20 iA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V 138 mW max. Active at 5 MHz for Vcc = 5.5 V

AT27LV010A-70TC

Abstract: 1N914 AT27C010 AT27LV010A AT27LV010A-70JC 0548C-1
Contextual Info: Features • Fast Read Access Tim e - 70 ns • Dual Voltage Range Operation - Low Voltage Power Supply Range, 3.0V to 3.6V - or Standard 5V ± 10% Supply Range • Compatible with JEDEC Standard AT27C010 • Low Power CMOS Operation - 20 i*A max. less than 1 jiA typical Standby for Vcc = 3.6V

128K x 8

Contextual Info: 27LV010 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C010 Low Power 3-Volt CMOS Operation 100 nA max. Standby 26 mW max. Active at 1 MHz for Vcc = 3.3 VDC 138 mW max. Active at 5 MHz for Vcc = 5.5 VDC

audi a3

Contextual Info: ADVANCED MICRO DEVICES S*ÌE D • 025752S ODMS'ìDa 0b7 ■ AUDI PRELIMINARY A m 2 7 L V 0 1 0 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ 3.3 V ± 0.3 V Vcc read operation High performance at 3.3 Vcc

NM27LV010B

Contextual Info: D ecem ber 1994 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec­ trica lly Program m able Read O nly Memory. It is m anufac­ tured using N ational’s latest 0.8/j, C M OS split gate AMGtm