29F200B Search Results

Contextual Info: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T 29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

HY29F200

Abstract: HY29F200B HY29F200T
Contextual Info: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and

29f200-90

Abstract: 29F200 flash tcp 8111 D370 344c1 es 3880 fm AS29F200T
Contextual Info: H igh Performance 256K x8/128 « I6 X AS29F200 Kl SV CMOS Flash FFPROM 2 M e g a b i t 5 V CMOS i-lash EEPROM Preliminary information Features • O rg a n iza tio n : 25 6 K x 8 o r 1 2 8 K x l 6 • Sector a rch itectu re - O n e 1 6K ; tw o 8K ; o n e 3 2 K ; a n d th r e e 6 4 K b y te s e c to rs

Contextual Info: AM DH 5.0 29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Contextual Info: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands

29F200

Abstract: 29F200 amd 29F200T
Contextual Info: a P R E L IM IN A R Y Am29F200T/29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements

29F200B

Contextual Info: PRELIM INARY A M D * 29F200B 2 Megabit 256 K x 8-B it/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V + 1 0 % for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: AMDZ1 PRELIMINARY 29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

fujitsu 29LV160B

Abstract: 29F800B 29LV160B 29F160B m29f800bb
Contextual Info: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright  1995.2002:

29f200b

Abstract: 0032M AM29 FLASH SO044
Contextual Info: PRELIM INARY Am29F200T/29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements

Contextual Info: M29F200T 29F200B SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

AS19F

Abstract: 29F2C F002T
Contextual Info: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r

Contextual Info: FIN A L Am29F200T/29F200B AtlvaM n“ o 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

PCM-997

Abstract: CS8900A DS2401 G100 J20A JP40 RTC-8564 CAN-H11 P2B E7 29F160B
Contextual Info: phyCORE-167HS/E Hardware Manual Edition May 2004 A product of a PHYTEC Technology Holding company phyCORE-167HS/E In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark  and copyright () symbols

Contextual Info: SGS-mOMSON M29F200T 29F200B MKMilLBSTBOllDIES 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical

29F200B

Contextual Info: M29F200T 29F200B SGS-THOMSON 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200T 29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200T 29F200B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

Contextual Info: PRELIMINARY A M D ii Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: AMDH 29F200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Contextual Info: PRELIMINARY A M D ii Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: PRELIMINARY A M D ii Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ Top or bottom boot block configurations available ■ Em bedded A lgorithm s

Contextual Info: AMDH 29F200B 2 Megabit 256 K x 8-Bit/I 28 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — Minimizes system level power requirements — Embedded Erase algorithm automatically