M29F200T Search Results

Contextual Info: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T M29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

00D3H

Abstract: M29F200 M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F200

Abstract: M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word

P1510

Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F200T and M29F200B are replaced respectively by the M29F200BT and M29F200BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

Contextual Info: M29F200T M29F200B SINGLE SUPPLY 2 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

M29F200

Abstract: M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200T M29F200B SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

M29F200

Abstract: M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

flash memory

Contextual Info: GENERAL INDEX FLASH MEMORY, SINGLE VOLTAGE 5V M29F100T. M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O R Y . M29F200T, M29F200B 2 Mb (x8/x16. Block Erase) SINGLE SUPPLY FLASH M EM O R Y. M29F040 4 Mb (512K x 8, Block Erase) SINGLE SUPPLY FLASH M E M O R Y .

A13D

Abstract: 29F200T 1/A13D 1/SMD a13d
Contextual Info: M29F200T M29F200B SGS-THOMSON IM 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10|js by Byte / 16ns by Word typical

Contextual Info: SGS-mOMSON M29F200T M29F200B MKMilLBSTBOllDIES 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY • 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical

29F200B

Contextual Info: M29F200T M29F200B SGS-THOMSON 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLYVO LTAG Efor PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F200T M29F200B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

Contextual Info: M29F200T M29F200B SINGLE SUPPLY 2 Megabit x8/x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

M29F200

Abstract: M29F200B M29F200BB M29F200BT M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F200T and M29F200B are replaced respectively by the M29F200BT and M29F200BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

FLASH MEMORY 29F

Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
Contextual Info: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

M29F200

Abstract: M29F200B M29F200BB M29F200BT M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F200T and M29F200B are replaced respectively by the M29F200BT and M29F200BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM

Contextual Info: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ