BAV74 Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode

BAV74

Contextual Info: BAV74 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 70 Volts FORWARD CURRENT – 0.2 Ampere SOT-23 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-23 Dim. Min. A A1 b

BAV74

Contextual Info: BAV74 Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES • · · · A Fast Switching Speed L Surface Mount Package Ideally Suited for Automatic Insertion 3 For General Purpose Switching Applications

BAV74

Contextual Info: Diodes SMD Type High-speed double diode BAV74 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High switching speed: max.4 ns 0.55 Small plastic SMD package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage: max. 50 V

all diodes ratings

Abstract: BAV74 marking a5 diode
Contextual Info: 23033=14 00007BL, 83G BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAV74 - A5 _3 .0_ Pin configuration 2.8 1 = ANODE 2 = ANODE 3 = CATHODE -K 0.14 0.48 0.38 3 2.6 2.4 1.02

Contextual Info: BAV74 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200m AMPERES Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 50 VOLTS 3 1 2 SOT-23 SOT-23 Outline Dimensions

BAV74

Contextual Info: BAV74 S ilizium -P lan ar-D oppeldiode Die Silizium-Planar-Doppeldiode B A V 7 4 im Kunststoffgehäuse SO T -2 3 eignet sich zum Einsatz als schnelle Schaltdiode in Schichtschaltungen. Die Diode wird mit den Codebuch­ staben J A gekennzeichnet. Die angegebenen Daten gelten, sofern nicht anders angegeben

C6V2 ST

Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
Contextual Info: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

BAV74

Abstract: DIN 3015
Contextual Info: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 DIN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise

diode fr 210

Abstract: BAV74
Contextual Info: BAV74 Surface Mount Switching Diode SWITCHING DIODE P b Lead Pb -Free 200m AMPERES 50 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions

Contextual Info: D iscrete POWER & S ig n a l 1 ecnnologies M l C O N D U C T O R TM BAV70 / 74 PH TD S O T -2 3 CONNECTION ET MARKING A4 BAV74 BAV70 DIAGRAMS JA High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Màximum RâtinÇjS

N 407 Diode

Abstract: Philips MBB BAV74
Contextual Info: • hbS3T31 N AMER 00243b3 407 ■ PHILIPS/DISCRETE APX b7E BAV74 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists o f tw o diodes in a m icrom iniature plastic envelope. The cathodes are commoned and the device is intended fo r high-speed switching in thick and thin -film circuits.

BAV74

Contextual Info: BAV74 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV70

Abstract: BAV74 BAV70 ON diode bav70
Contextual Info: BAV70 / BAV74 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAV70 / 74 r7! CONNECTION DIAGRAMS MARKING S O T -2 3 BAV70 A4 BAV74 JA High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted

Contextual Info: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Diodes BAV74LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 m A IF: Reverse Voltage 50 V VR: Operating and storage junction temperature range 0. 95

BAV74LT1G

Abstract: BAV74LT3G
Contextual Info: BAV74LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ANODE 1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current

bav70

Abstract: BAV74
Contextual Info: BAV70 / BAV74 tß Discrete POWER & Signal Technologies National Semiconductor" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Value Units Average Rectified Current 70 50 200 V

smd diode a5

Abstract: BAV74 bav74 equivalent diode smd BAV74 408K A5 sot-23 single DIODE smd diode marking 51
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode

sot23 marking code JTp

Abstract: A5 sot-23 single DIODE BAV74 marking code A5 A5 DIODE
Contextual Info: BAV74 SILICON PLANAR DUAL SWITCHING DIODE High Speed Switching Dual Diodes, Common Cathode 3 1 2 Marking Code: A5 SOT-23 Plastic Package Absolute Maximum Ratings Symbol Limits Unit VRRM 60 V Continuous reverse voltage VR 50 V Forward current DC Single diode loaded

Contextual Info: BAV74 Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current150m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m

BAV74

Contextual Info: BAV74 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 70 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-23 • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-23 Dim. Min. A A1 b

DIODE a5

Contextual Info: ffl. BAV74 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Dual diodes, common cathodes Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A V 7 4 - A5 3.0 Pin configuration ~2 . 8_ 0.14 0.48 038 1 = ANODE 2 = ANODE 3 = CATHODE _L 3 0.70 0.50 § 1.4 2.6 1.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAV74LT1 SWITCHING DIODE SOT—23 FEATURES １．０ Power dissipation PD : 225 mW（Tamb=25℃） Forward Current IF: 200 mA Reverse Voltage VR : 50 V Operating and storage junction temperature range

Contextual Info: • bb53T31 00243b3 407 N AHER PHILIPS/DISCRETE APX BAV74 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the device is intended for high-speed switching in thick and thin-film circuits.