JUL25 Search Results

sem 2006

Contextual Info: REV ECN.NO ü roe« • < : t-l£'-if EE] \-2Sjl 50# -/ d ì 26 s @ Hf □ □ CF-50 Ì 01000202010001020102015300 50# l\ - U25# JUL25 26 # □ □ ni A, Msn Notes: 1.All Dimensions ore in Millimeters.

Contextual Info: REVISIONS SYM ZO NE EC N , D K1 Q JO1 00 ERN PLATING NO. REVISED ADD DIEMNSIONS FOR SHIELD BOARD LOCK E APPRD. DATE L.C. A ug4/09 JUL25/12 S.MUGAN '-L 0 O .9 2 ± O . 0 5 !i [0 .0 3 6 ± .0 0 2 ] \ - 0 - \ O . 1 O \ w \ H 0 L E 4 R E Q 'D 0 2 .3 O ± O .O 5

P2803NVG

Abstract: SEM 2005 niko-sem p2803nvg NIKO-SEM P2803 "Field Effect Transistor" Field Effect Transistor p2803n DSA0025594 P-CHANNEL
Contextual Info: NIKO-SEM P2803NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 27.5mΩ 7A P-Channel -30 34mΩ -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

ELM34402AA

Abstract: P2003b p2003bvg
Contextual Info: 单 N 沟道 MOSFET ELM34402AA-N •概要 ■特点 ELM34402AA-N 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=8A ·Rds on < 20mΩ (Vgs=10V) ·Rds(on) < 32mΩ (Vgs=4.5V) ■绝对最大额定值 项目

Contextual Info: R E V IS IO N S SYM R .0 1 0 [ R 0 .2 5 ] MAX. TYP. .6 5 0 [1 6 .5 1 ] MIN. ECN, ZO NE A PER ERN ECN NO. E07248 DATE APPRD. JU L25/07 L .C H A N T .5 1 5 [1 3 .0 8 ] MIN. LATCH TO THE H O USING OPENING 1 RECOMMENDED PANEL CUTOUT TOP VIEW .5 9 8 .6 3 4 [1 5 .1 9 ]

Contextual Info: User’s Guide NHD-3.5-320240YF-ATXL# LCM Liquid Crystal Display Module For product support, contact Newhaven Display International 2511 Technology Drive, #101 Elgin, Illinois 60123 Tel: (847) 844-8795 Fax: (847) 844-8796 February 11, 2009 Newhaven Display

TG6F

Abstract: SPK Electronics W523S08 W523S10 W523S12 W523S15 W523S20 W523S40 W523S50 W523S60
Contextual Info: W523SXX HIGH FIDELITY PRELIMINARY PowerSpeech TM GENERAL DESCRIPTION The W523Sxx family are programmable speech synthesis ICs that utilize Winbond′s new high fidelity voice synthesis algorithm to generate all types of voice effects with high sound quality.

Contextual Info: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)

P2803NVG

Contextual Info: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)

复合

Abstract: ELM34603AA
Contextual Info: 复合沟道 MOSFET ELM34603AA-N •概要 ■特点 ELM34603AA-N 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=7A ·Id=-6A ·Rds on < 27.5mΩ(Vgs=10V)·Rds(on) < 34mΩ(Vgs=-10V)

marking code 62 3 pin diode

Abstract: sot323 marking code A.C diode marking code 88 MARK A SCD80
Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs

if filter 10.7

Abstract: "Logarithmic Amplifier" Logarithmic Logarithmic Amplifier TDA8780M
Contextual Info: INTEGRATED CIRCUITS TDA8780M True logarithmic amplifier Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03 PHILIPS Philips Se m ico n d u cto rs 7iio flZb ocm cm 1995 Jul 25 tst Philips Semiconductors Product specification

Contextual Info: Complementary MOSFET ELM34603AA-N •General Description ■Features ELM34603AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=7A Rds(on) < 27.5mΩ(Vgs=10V) Rds(on) < 40mΩ(Vgs=4.5V)

Contextual Info: シングル N チャンネル MOSFET ELM34402AA-N •概要 ■特長 ELM34402AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=8A ・ Rds on < 20mΩ (Vgs=10V) ・ Rds(on) < 32mΩ (Vgs=4.5V)

marking r4s

Abstract: R4S BFP640 BFP640 BFP640 noise figure
Contextual Info: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications 1
Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: Single N-channel MOSFET ELM34402AA-N •General description ■Features ELM34402AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=8A Rds(on) < 20mΩ (Vgs=10V) Rds(on) < 32mΩ (Vgs=4.5V)

Contextual Info: コンプリメンタリーパワー MOSFET ELM34603AA-N •概要 ■特長 ELM34603AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=7A

BBY58-02L

Abstract: BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4 SC79 SCD80
Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs