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    BFP640 Datasheets (27)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BFP640
    		Infineon Technologies Oscillator, Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Original PDF 444.78KB 3
    BFP640
    		Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF 184.78KB 6
    BFP640
    		Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF 276.31KB 8
    BFP640
    		Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; F (typ): 0.65 dB; Original PDF 153.75KB 10
    BFP640E6327
    		Infineon Technologies Controlled Oscillator, Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640, Tape And Reel Original PDF 444.78KB 3
    BFP640E6327
    		Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN SIGE RF SOT-343 Original PDF 10
    BFP640E6327BTSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN SIGE RF SOT-343 Original PDF 1.13MB
    BFP640E6359
    		Infineon Technologies IC DIELECTRIC RESONATOR OSCILLATOR AT 4 Original PDF 163.09KB 10
    BFP640E7764
    		Infineon Technologies IC DIELECTRIC RESONATOR OSCILLATOR AT 4 Original PDF 163.09KB 10
    BFP640ESDH6327
    		Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 46GHZ 4.7V SOT343 Original PDF 28
    BFP640ESDH6327XTSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 46GHZ 4.7V SOT343 Original PDF 1.19MB
    BFP640F
    		Infineon Technologies SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 Original PDF 196.56KB 7
    BFP640F
    		Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF 192.69KB 6
    BFP640F
    		Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 4.0 V; IC(max): 50.0 mA; Ptot (max): 200.0 mW; fT (typ): 40.0 GHz; F (typ): 0.65 dB; Original PDF 246.51KB 10
    BFP 640F
    		Infineon Technologies SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 Original PDF 196.56KB 7
    BFP640FE6327
    		Infineon Technologies TRANS GP BJT NPN 4V 0.05 Original PDF 166.47KB 10
    BFP 640FESD E6327
    		Infineon Technologies RF TRANS NPN 4.7V 46GHZ 4TSFP Original PDF 377.62KB 3
    BFP640FESDE6327
    		Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 46GHZ 4.7V TSFP-4-1 Original PDF 29
    BFP640FESDH6327
    		Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 50MA 4TSFP Original PDF 28
    BFP640FESDH6327XTSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 50MA 4TSFP Original PDF 1.23MB
    SF Impression Pixel

    BFP640 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BFP640FH6327XTSA1

    Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin TSFP T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () BFP640FH6327XTSA1 4,446,000 1,235
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    BFP640FH6327XTSA1 693,000 1,235
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    BFP640FH6327XTSA1 2,970 1,235
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    BFP640FH6327XTSA1 2,900 1,235
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    BFP640FH6327XTSA1 1,526 14
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    Avnet Americas BFP640FH6327XTSA1 Tape & Reel 18 Weeks 3,000
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    Mouser Electronics BFP640FH6327XTSA1 160
    • 1 $0.57
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    Arrow Electronics BFP640FH6327XTSA1 Cut Strips 1,526 18 Weeks 1
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    Rochester Electronics BFP640FH6327XTSA1 5,144,870 1
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    TME BFP640FH6327XTSA1 3,000
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    EBV Elektronik BFP640FH6327XTSA1 19 Weeks 3,000
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    Infineon Technologies AG BFP640H6327XTSA1

    Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin SOT-343 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () BFP640H6327XTSA1 99,000 3,000
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    BFP640H6327XTSA1 9,000 1,386
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    BFP640H6327XTSA1 2,848 1,386
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    BFP640H6327XTSA1 1,762 11
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    BFP640H6327XTSA1 1,298 36
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    Avnet Americas BFP640H6327XTSA1 Tape & Reel 26 Weeks 3,000
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    Mouser Electronics BFP640H6327XTSA1 2,284
    • 1 $0.84
    • 10 $0.52
    • 100 $0.36
    • 1000 $0.28
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    Arrow Electronics () BFP640H6327XTSA1 99,000 26 Weeks 3,000
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    BFP640H6327XTSA1 Cut Strips 1,762 26 Weeks 1
    • 1 $0.49
    • 10 $0.31
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    BFP640H6327XTSA1 Cut Strips 1,298 26 Weeks 1
    • 1 $0.18
    • 10 $0.18
    • 100 $0.18
    • 1000 $0.17
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    Newark () BFP640H6327XTSA1 Tape & Reel 3,000
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    BFP640H6327XTSA1 Tape & Reel 100
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    • 1000 $0.28
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    BFP640H6327XTSA1 Cut Tape 5
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    Quest Components () BFP640H6327XTSA1 6,109
    • 1 $1.25
    • 10 $1.25
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    • 1000 $1.25
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    BFP640H6327XTSA1 6,109
    • 1 $1.25
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    BFP640H6327XTSA1 1,400
    • 1 $0.36
    • 10 $0.36
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    • 1000 $0.17
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    BFP640H6327XTSA1 1,400
    • 1 $0.36
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    Rochester Electronics BFP640H6327XTSA1 11,848 1
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    TME BFP640H6327XTSA1 2,328 1
    • 1 $0.49
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    EBV Elektronik BFP640H6327XTSA1 27 Weeks 3,000
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    Infineon Technologies AG BFP 640 E6327

    Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BFP 640 E6327 26,583 821
    • 1 -
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    • 1000 $0.42
    • 10000 $0.38
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    Infineon Technologies AG BFP 640 H6327

    Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin SOT-343 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () BFP 640 H6327 3,000 244
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    BFP 640 H6327 4 4
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    Mouser Electronics BFP 640 H6327 2,985
    • 1 $1.06
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    Quest Components BFP 640 H6327 2,403
    • 1 $0.97
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    TME BFP 640 H6327 3,004 218
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    Infineon Technologies AG BFP640ESDH6327XTSA1

    Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin SOT-343 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BFP640ESDH6327XTSA1 3,000 7
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    Avnet Americas BFP640ESDH6327XTSA1 Tape & Reel 26 Weeks 3,000
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    Mouser Electronics BFP640ESDH6327XTSA1
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    Arrow Electronics () BFP640ESDH6327XTSA1 Cut Strips 3,000 26 Weeks 1
    • 1 $0.34
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    • 100 $0.23
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    BFP640ESDH6327XTSA1 Cut Strips 1 26 Weeks 1
    • 1 $0.18
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    Newark () BFP640ESDH6327XTSA1 Tape & Reel 3,005 100
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    BFP640ESDH6327XTSA1 Cut Tape 3,005 1
    • 1 $0.54
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    TME BFP640ESDH6327XTSA1 3,000
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    EBV Elektronik BFP640ESDH6327XTSA1 27 Weeks 3,000
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    Win Source Electronics BFP640ESDH6327XTSA1 27,390
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    Find more BFP640 price and stock on Findchips.com

    BFP640 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		bfp640esdot343ot343-poot343-fp+14ot323-tp726-bfp640esde6327640esde6327xposysgummel poon model parameter hbtx-goldcolossusdiodes transistor marking k2 dualtrimblegermanium transistoragilent adssensonor2.4ghz lnb PDF

    R4S BFP640

    Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
    Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640vps05605ot343apr-21-2004+3r4s bfp6404ghz s parameters transistors parameters 4ghz PDF

    4GHZ TRANSISTOR

    Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor
    Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640ot3434ghz transistorr4s bfp640+6bfp640 noise figurebga420t-25transistor npn 5ghzmarking r4s4ghz s parameters transistor PDF

    bfp640f

    Abstract: SPICE 2G6 transistor BF 298
    Contextual Info: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640fspice 2g6transistor bf 298 PDF

    Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640

    Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
    Contextual Info: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description 3 Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition


    Original     		92ghzbfp640ot-343ot343+9dielectric resonator oscillator at 11.92ghz utilizing bfp640dielectric resonator oscillator at 11.92ghzdielectric resonatorvps05605bfp640 noise figurefet dro 10 ghzfet drorf transistor 10 ghz low noisediagram radar circuit PDF

    1575-24

    Abstract: BPF640 bfp640f Texas Instruments 4100 GPS BFP640FESD gsm mobile jammer mobile jammer mobile signal jammer AN194 BPF640FESD
    Contextual Info: BFP640FESD LNA BFP640FESD for GPS 1575MHz A pplication A pplication Note AN194 Revision: Rev. 1.0 2010-03-09 RF and Protection Devices Edition 2010-03-09 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		bfp640fesd1575mhzan194proper2010-03-09+81575-24bpf640bfp640ftexas instruments 4100 gpsgsm mobile jammermobile jammermobile signal jammerbpf640fesd PDF

    Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640fbfp640may PDF

    Contextual Info: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		bfp640fesd PDF

    BFP620 applications note

    Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
    Contextual Info: LWR # 00522 LNA P Silicon Discretes - BFP640 Preliminary Eval / 2.4 GHz LNA September 7, 2001 The SiGe BFP640 as a 2.4 GHz Low Noise Amplifier. • Overview: The new BFP640 SiGe Transistor is shown in a 2400 – 2483.5 MHz Low Noise Amplifier Application. The


    Original     		bfp640bfp620ot-343bfp620 applications note+628428bfp640 noise figuretransistor l2ansoft3rd rail engineeringrf lna 10 ghz PDF

    bfp640f

    Abstract: BFP420F
    Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640fbfp420f PDF

    BFP640E6327

    Abstract: BFP640 noise figure bfp640e R4S BFP640
    Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640ot343726-bfp640e6327e6327+4bfp640e6327bfp640 noise figurebfp640er4s bfp640 PDF

    BFP640FESD

    Abstract: MIPI spec C166 JESD22-A114 NF50 X-GOLD RF Bipolar Transistor XPOSYS Germanium Transistor
    Contextual Info: BFP640FESD Robust SiGe:C Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2010-04-08 RF & Protection Devices Edition 2010-04-08 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		bfp640fesdmipi specc166jesd22-a114+5nf50x-goldrf bipolar transistorxposysgermanium transistor PDF

    bfp640esd

    Abstract: BFP740FESD WiMAX RF Transceiver AN218 BFP540FESD BFP640FESD C166 LQW15A rf transistor 2.5GHz S11-S22
    Contextual Info: BFP640ESD Ultra Low Noise Amplifier for 2.5 - 2.7 GHz WLAN & WiMAX A pplications A pplication Note AN218 Revision: Rev. 1.0 2010-06-30 RF and Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		bfp640esdan21820dbmbfp740fesd+7wimax rf transceiverbfp540fesdbfp640fesdc166lqw15arf transistor 2.5ghzs11-s22 PDF

    BFP740

    Abstract: sdars lna BFP640 BFP740FESD MIPI omnivision BFP740 application note sdars xm sirius x-goldtm sdars C166TM
    Contextual Info: BFP740FESD/BFP640FESD 2 Stage LNA for 2.330GHz SDARS Combined 2 Stage LNA for SDARS using Infineon's BFP740FESD and BFP640FESD Series A pplication Note AN222 Revision: 1.0 2010-07-02 RF and Protection Devices Edition 2010-07-02 Published by Infineon Technologies AG


    Original     		bfp740fesd/bfp640fesd330ghzbfp740fesdbfp640fesd+11an222bfp740/bfp640bfp740sdars lnabfp640mipi omnivisionbfp740 application notesdars xm siriusx-goldtmsdarsc166tm PDF

    bfp640f

    Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
    Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640fbfp640r4s bfp640fbfp420f+1infineon technologies transistor 4 ghz PDF

    R4S BFP640

    Abstract: BFP640 transistor ph 45 v marking r4s
    Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640vps05605ot343aug-16-2004+3r4s bfp640transistor ph 45 vmarking r4s PDF

    Contextual Info: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


    Original     		bfp640esdot343ot343-poot343-fp+1ot323-tp PDF

    gummel poon model parameter HBT

    Abstract: 726-BFP640FESDH6327 Germanium Transistor
    Contextual Info: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		bfp640fesd726-bfp640fesdh6327640fesdh6327+2gummel poon model parameter hbtgermanium transistor PDF

    marking r4s

    Abstract: bfp640f BFP640F equivalent ccb 21
    Contextual Info: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640fmar-11-2004marking r4sbfp640f equivalent+1ccb 21 PDF

    marking re

    Abstract: BFP640 BGA420 T-25
    Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640ot343marking rebga420+1t-25 PDF

    bfp640

    Abstract: BFP640/F
    Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640vps05605ot343bfp640/f PDF

    Contextual Info: BFP640FESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.1, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


    Original     		bfp640fesd PDF

    BFP640 noise figure

    Abstract: s parameters 4ghz
    Contextual Info: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640e/l6327e/l7764l6327+5l7764vps05605oct-30-2003bfp640 noise figures parameters 4ghz PDF

    marking r4s

    Abstract: R4S BFP640 BFP640 BFP640 noise figure
    Contextual Info: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications 1  Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		bfp640vps05605ot343jul-25-2002+3marking r4sr4s bfp640bfp640 noise figure PDF